Intersil IRF243, IRF242, IRF240, IRF241 Datasheet

IRF240

Data Sheet March 1999

18A, 200V, 0.180 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFETs designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17422.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF240 TO-204AE IRF240

NOTE: When ordering, include the entire part number.

File Number

Features

• 18A, 200V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

= 0.180Ω

Components to PC Boards”

Symbol

D

G

1584.3

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AE

GATE (PIN 1)

S

TOP VIEW

SOURCE (PIN 2)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF240

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF240 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

200 V
200 V

18 A
11 A

72 A
±20 V
125 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

580 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)

Gate to Source Leakage I
Drain to Source On Resistance r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

D(ON)

Rise Time t
Turn-Off Delay Time t

D(OFF)

Fall Time t
Total Gate Charge

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal ResistanceJunctionto Ambient R

DSSVGS

DSS

GSS

fs

r

f

Q

g

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = 250µA (Figure 10) 200 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS> I

D(ON) xrDS(ON)MAX

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

, VGS = 10V 18 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 10A (Figures 8, 9) - 0.14 0.180 Ω
VDS= 10V, ID = 11V (Figure 12) 6.7 9.0 - S
VDD= 100V, ID≈ 18A, RG = 9.1Ω, RL = 5.3Ω

(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature

-1630ns

-2760ns

-4080ns

-3160ns

VGS = 10V, ID = 18A, VDS = 0.8 x Rated BV
I

= 1.5mA (Figures 14, 19, 20) Gate Charge is

g(REF)

Essentially Independent of Operating Temperature

DSS

,

-4360nC

-8-nC

-27- nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1275 - pF

- 500 - pF

- 160 - pF

Measured between the
Contact Screw on Header
that is Closer to Source
and Gate PinsandCenter
of Die

Measured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad

Free Air Operation - - 30

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 1.0

o
o

C/W
C/W

2

IRF240

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 2.7mH, RG = 25Ω, peak IAS = 9A. See Figures 15 and 16.

Modified MOSFET
Symbol Showing the
Integral Reverse P-N

D

- - 18 A

- - 72 A

Junction Diode

G

S

TJ = 25oC, ISD= 18A, VGS = 0V (Figure 13) - - 2.0 V

SD

TJ = 150oC, ISD = 18A, dISD/dt = 100A/µs - 650 - ns

rr

TJ = 150oC, ISD = 18A, dISD/dt = 100A/µs - 4.1 - µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1.0

0.5

20

16

12

8

DRAIN CURRENT (A)

D,

I

4

0

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, THERMAL IMPEDANCE

θJC

Z

0.01
10

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-5

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

0.1 1 10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

3

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t
PER UNIT BASE =
R

= 1.0oCW

θJC

- TC= PDM x Z

T

JM

θJC

t

2

2

(t)