Intersil IRF237, IRF234, IRF236, IRF235 Datasheet
January 1998
Semiconductor
IRF234, IRF235,
IRF236, IRF237
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm,
N-Channel Power MOSFETs
Features
• 8.1A and 6.5A, 275V and 250V
•r
DS(ON)
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 275V, 250V DC Rated - 120V AC Line System
Operation
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.45Ω and 0.68Ω
Components to PC Boards”
Ordering Information
PART NUMBER PACKAGE BRAND
IRF234 TO-204AA IRF234
IRF235 TO-204AA IRF235
IRF236 TO-204AA IRF236
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17413.
Symbol
D
G
S
IRF237 TO-204AA IRF237
NOTE: When ordering, include the entire part number.
Packaging
DRAIN
(FLANGE)
GATE (PIN 1)
JEDEC TO-204AA
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1997
5-1
File Number 2208.3
IRF234, IRF235, IRF236, IRF237
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRF234 IRF235 IRF236 IRF237 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . V
GS
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
T
= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . P
DS
DGR
D
D
DM
GS
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.6 0.6 W/
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . T
AS
, T
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
250 250 275 275 V
250 250 275 275 V
8.1 6.5 8.1 6.5 A
5.1 4.1 5.1 4.1 A
32 26 32 26 A
±20 ±20 ±20 ±20 V
75 75 75 75 W
180 180 180 180 mJ
-55 to 150 -55 to 150 -55 to 150 -55 to 150
300
260
300
260
300
260
300
260
o
C
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSVGS
= 0V, ID = 250µA, (Figure 10)
IRF234, IRF235 250 - - V
IRF236, IRF237 275 - - V
Gate to Threshold Voltage V
Zero-Gate Voltage Drain Current I
On-State Drain Current (Note 2) I
GS(TH)VGS
DSSVDS
D(ON)VDS
IRF234, IRF236 8.1 - - A
= VDS, ID = 250µA 2.0 - 4.0 V
= Rated BV
VDS = 0.8 x Rated BV
> I
D(ON) xrDS(ON)MAX
, VGS = 0V - - 25 µA
DSS
, VGS = 0V TJ =125oC - - 250 µA
DSS
, VGS = 10V,
(Figure 7)
IRF235, IRF237 6.5 - - A
Gate to Source Leakage I
Drain to Source On-State Resistance (Note 2) r
GSSVGS
DS(ON)VGS
= ±20V - - ±100 nA
= 10V, ID = 4.1A, (Figures 8, 9)
IRF234, IRF236 - 0.32 0.45 Ω
IRF235, IRF237 - 0.48 0.68 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)VDD
VDS≥ 50V, ID = 4.1A, (Figure 12) 2.9 4.3 - S
fs
= 125V, ID≈ 8.1A, RG = 12Ω, RL = 1.1Ω
- 9.1 14 ns
VGS = 10V, (Figures 17, 18)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
MOSFET Switching Times are Essentially
r
Independent of Operating Temperature
f
= 10V, ID = 8.1A, VDS = 0.8 x Rated BV
I
= 1.5mA, (Figures 14, 19, 20)
G(REF)
DSS
-2335ns
-3147ns
-1929ns
-2435nC
Gate Charge is Essentially Independent of
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Operating Temperature
gs
gd
- 5.1 - nC
-12-nC
5-2
IRF234, IRF235, IRF236, IRF237
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L
Internal Source Inductance L
Therma Resistance Junction to Case R
Therma Resistance Junction to Ambient R
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ISSVGS
OSS
RSS
D
S
= 0V, VDS = 25V, f = 1.0MHz, (Figure 11) - 600 - pF
- 180 - pF
-52-pF
Measured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Measured From The
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
- 5.0 - nH
- 12.5 - nH
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad
θJC
Free Air Operation - - 30oC/W
θJA
G
L
S
S
- - 1.67oC/W
Continuous Source to Drain Current I
Pulse Source to Drain Current
(Note 3)
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q
I
SDM
Modified MOSFET
S
Symbol Showing the
Integral Reverse
D
- - 8.1 A
- - 32 A
P-N Junction Diode
G
S
TJ = 25oC, ISD= 8.1A, VGS = 0V, (Figure 13) - - 2.0 V
SD
TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/µs 92 180 390 ns
rr
TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/µs 0.63 1.3 2.7 µC
RR
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 4.5mH, RG = 25Ω, peak IAS = 8.1A. See Figures 15, 16.
5-3
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