Intersil IRF232, IRF230, IRF233, IRF231 Datasheet
October 1997
Semiconductor
IRF230, IRF231,
IRF232, IRF233
8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm,
N-Channel Power MOSFETs
Features
• 8.0A and 9.0A, 150V and 200V
•r
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.4Ω and 0.6Ω
DS(ON)
Components to PC Boards”
Ordering Information
P AR T NUMBER P ACKAGE BRAND
IRF230 TO-204AA IRF230
IRF231 TO-204AA IRF231
IRF232 TO-204AA IRF232
IRF233 TO-204AA IRF233
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17412.
Symbol
D
G
S
NOTE: When ordering, use the entire part number.
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1997
1
File Number 1568.2
IRF230, IRF231, IRF232, IRF233
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
IRF230 IRF231 IRF232 IRF233 UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I
TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P
DS
D
D
DM
GS
D
200 150 200 150 V
200 150 200 150 V
9.0
6.0
9.0
6.0
8.0
5.0
8.0
5.0
36 36 32 32 A
±20 ±20 ±20 ±20 V
75 75 75 75 W
A
A
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.6 0.6 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . TJ,T
AS
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
150 150 150 150 mJ
-55 to 150 -55 to 150 -55 to 150 -55 to 150
300
260
300
260
300
260
300
260
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to TJ = 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSSID
= 250µA, VGS = 0V, (Figure 10)
IRF230, IRF232 200 - - V
IRF231, IRF233 150 - - V
Gate Threshold Voltage V
Gate to Source Leakage Current I
Zero Gate Voltage Drain Current I
GS(TH)VGS
GSSVGS
DSSVDS
= VDS, ID = 250µA 2.0 - 4.0 V
= ±20V ±100 nA
= Rated BV
= 0.8 x Rated BV
V
DS
, VGS = 0V - - 25 µA
DSS
DSS
, VGS = 0V
- - 250 µA
TJ= 125oC
On-State Drain Current (Note 2) I
D(ON)VDS
> I
D(ON)
x r
DS(ON)MAX
, VGS = 10V
IRF230, IRF231 9.0 - - A
IRF232, IRF233 8.0 - - A
Drain to Source On Resistance (Note 2) r
DS(ON)ID
= 5A, VGS = 10V, (Figure 8, 9)
IRF230, IRF231 - 0.25 0.4 Ω
IRF232, IRF233 - 0.4 0.6 Ω
Forward Transconductance (Note 2) g
Turn-On Delay Time t
d(ON)VDD
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge
Q
g(TOT)VGS
(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
VDS≥ 50V, ID = 5A, (Figure 12) 3.0 4.8 - S
fs
= 90V, ID≈ 5A,RG = 15Ω, RL =18Ω
(Figures 17, 18) MOSFET Switching Times are
r
Essentially Independent of Operating
Temperature
f
= 10V, ID = 12A, VDS = 0.8V x Rated BV
I
= 1.5mA, (Figures 14, 19, 20) Gate
g(REF)
Charge is Essentially Independent of Operating
gs
Temperature
gd
DSS,
- - 30 ns
- - 50 ns
- - 50 ns
- - 40 ns
-1930nC
-10-nC
-9-nC
2
IRF230, IRF231, IRF232, IRF233
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L
Internal Source Inductance L
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current I
Pulse Source to Drain Current
(Note 3)
SD
I
SDM
ISSVDS
= 25V, VGS = 0V, f = 1MHz
(Figure 11)
OSS
RSS
Measured Between the
D
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Measured From The
S
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad
θJC
Free Air Operation - - 30oC/W
θJA
Modified MOSFET Symbol Showing the Integral
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
D
Reverse P-N Junction
- 600 - pF
- 250 - pF
-80-pF
- 5.0 - nH
- 12.5 - nH
- - 1.6oC/W
- - 9.0 A
- - 36 A
Diode
G
S
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovered Charge Q
TJ = 25oC, ISD = 9.0A, VGS = 0V, (Figure 13) - - 2.0 V
SD
TJ = 150oC, ISD = 9.0A, dISD/dt = 100A/µs - 450 - ns
rr
TJ = 150oC, ISD = 9.0A, dISD/dt = 100A/µs - 3.0 - µC
RR
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD= 20V, starting TJ= 25oC, L = 3.37mH, RG=50Ω, peak IAS = 9A. See Figures 15, 16.
3
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