Intersil IRF153, IRF152, IRF151, IRF150 Datasheet

IRF150

Data Sheet March 1999

40A, 100V, 0.055 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly Developmental Type TA17421.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF150 TO-204AE IRF150

NOTE: When ordering, include the entire part number.

File Number

Features

• 40A, 100V

•r

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.055Ω

Components to PC Boards”

Symbol

D

G

1824.3

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AE

GATE (PIN 1)

S

SOURCE (PIN 2)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF150

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF150 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

100 V
100 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 40 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D
DM
GS

D

25 A
160 A
±20 V
150 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

150 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)VGS

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Impedance Junction to Case R
Thermal Impedance Junction to Ambient R

DSSVGS

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 0V, ID = 250µA (Figure 10) 100 - - V

= VDS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON) xrDS(ON)MAX

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

, VGS = 10V 40 - - A

VGS = ±20V - - ±100 nA

= 10V, ID = 20A (Figures 8, 9) - 0.045 0.055 Ω
VDS> I

D(ON) xrDS(ON)MAX

= 24V, ID≈ 20A, RG = 4.7Ω, RL = 1.2Ω
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature

, ID = 20A (Figure 12) 9.0 11 - S

- - 35 ns

- - 100 ns

- - 125 ns

- - 100 ns

= 10V, ID = 50A, VDS = 0.8 x Rated BV

I

= -1.5mA (Figures 14, 19, 20) Gate Charge

g(REF)

is Essentially Independent of Operating
Temperature

DSS

,

- 63 120 nC

-27-nC

-36-nC

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 2000 - pF

- 1000 - pF

- 350 - pF

Measured between the
Contact Screw on the
Flange that is Closer to
SourceandGate Pinsand
the Center of Die

Measured from the
Source Lead, 6mm
(0.25in) from the Flange
and the Source Bonding
Pad

Free Air Operation - - 30

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 0.8

o
o

C/W
C/W

2

IRF150

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to DrainCurrent I
Pulse Source to Drain Current (Note 3) I

SD

SDM

Diode Source to Drain Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 10V, starting TJ = 25oC, L = 170µH, RG = 50Ω, Peak IAS = 40A. See Figures 15, 16.

Modified MOSFET
Symbol Showing the
Integral Reverse P-N

D

- - 40 A

- - 160 A

Junction Diode

G

S

TJ = 25oC, ISD= 40A, VGS = 0V (Figure 13) - - 2.5 V

SD

TJ = 150oC, ISD = 40A, dISD/dt = 100A/µs - 600 - ns

rr

TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs - 3.3 - µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1.0

0.1

0.01

0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

-4

10

10

C/W)

o

, TRANSIENT THERMAL

IMPEDANCE (

θJC

Z

40

32

24

16

DRAIN CURRENT (A)

D,

I

8

0

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

t

, RECTANGULAR PULSE DURATION (s)

1

-2

10

50 75 10025 150

TC, CASE TEMPERATURE (oC)

125

CASE TEMPERATURE

P

DM

t

1

t

t

2

θJC

2

+ T

2

C

NOTES:
DUTY FACTOR: D = t1/t
TJ = PDM x Z

0.1 1 10

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

3