Intersil IRF131, IRF130, IRF133, IRF132 Datasheet

IRF130

Data Sheet March 1999

14A, 100V, 0.160 Ohm, N-Channel
Power MOSFET

This N-Channel enhancementmode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdownavalanchemodeof operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17411.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF130 TO-204AA IRF130

NOTE: When ordering, use the entire part number .

File Number

Features

• 14A, 100V

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.160Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

1566.4

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

S

SOURCE (PIN 2)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF130

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF130 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

D
D

DM

GS

D

100 V
100 V

14

9.9
56 A

±20 V

79 W

A
A

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.53 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50 mJ

-55 to 175

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VDS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSSID

DSS

GSS

ts

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= 250µA, VGS = 0V (Figure 10) 100 - - V

= VGS, ID = 250µA 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 150oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V 14 - - A

VGS = ±20V - - ±100 nA

= 8.3A, VGS = 10V (Figures 8, 9) - 0.12 0.16 Ω
VDS≥ 50V, ID = 8.3A (Figure 12) 4.6 6.9 - S
VDD = 50V, ID≈ 14A, RG = 12Ω, RL = 3.5Ω

(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating Temperature

- - 30 ns

- - 75 ns

- - 40 ns

- - 45 ns

= 10V, ID = 14A, VDS = 0.8 x Rated BV

I

= 1.5mA (Figures 14, 19, 20) Gate Charge is

g(REF)

Essentially Independent of Operating Temperature

DSS

,

-1826nC

- 5.5 - nC

-11-nC

VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 600 - pF

- 300 - pF

- 100 - pF

Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die

Measured from the Source
Lead, 6mm (0.25in) from
the Flange and the Source
Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

G

L

S

S

- 5.0 - nH

- 12.5 - nH

- - 1.9oC/W

Free Air Operation - - 30

o

C/W

2

IRF130

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current (Note 3) I

Source to Drain Diode Voltage (Note 2) V

SD

SDM

SD

Reverse Recovery Time t
Reverse Recovery Charge Q

RR

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 380µH, RG = 25Ω, peak IAS = 14A. See Figures 15, 16.

Modified MOSFET
Symbol Showing the
Integral Reverse P-N

D

- - 14 A

- - 56 A

Junction Diode

G

S

TJ = 25oC, ISD = 14A, VGS = 0V (Figure 13) - - 2.5 V
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs 55 120 250 ns

rr

TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs 0.26 0.58 1.3 µC

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100 125 150 1750

T

, CASE TEMPERATURE (oC)

C

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

10

C)

o

1.0

0.5

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

25 50 75 100 125 150 175

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, THERMAL IMPEDANCE (

θJC

Z

-2

10

10

-5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

P

DM

t

1

t

θJC

1/t2

2

+ T

C

10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-4

10

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

0.1 1

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

3