Intersil IRF123, IRF122, IRF121 Datasheet

October 1997

Semiconductor

IRF120, IRF121,

IRF122, IRF123

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm,
N-Channel, Power MOSFETs

Features

• 8.0A and 9.2A, 80V and 100V

•r

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.27Ω and 0.36Ω

DS(ON)

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

IRF120 TO-204AA IRF120
IRF121 TO-204AA IRF121
IRF122 TO-204AA IRF122
IRF123 TO-204AA IRF123

Description

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver­tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.

Formerly developmental type TA09594.

Symbol

D

G

S

NOTE: When ordering, use the entire part number.

Packaging

DRAIN
(FLANGE)

JEDEC TO-204AA

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1997

2-1

File Number 1565.2

IRF120, IRF121, IRF122, IRF123

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF120 IRF121 IRF122 IRF123 UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . V

DGR

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

100 80 100 80 V
100 80 100 80 V

9.2

6.5

9.2

6.5

8.0

5.6

8.0

5.6

37 37 32 32 A

±20 ±20 ±20 ±20 V

60 60 60 60 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 0.4 0.4 0.4 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . .TJ, T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

36 36 36 36 mJ

-55 to 175 -55 to 175 -55 to 175 -55 to 175

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

IRF120, IRF122 100 - - V

= 250µA, VGS = 0V

(Figure 10)

IRF121, IRF123 80 - - V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

GS(TH)VDS

DSSVDS

D(ON)VDS

= VGS, ID = 250µA 2.0 - 4.0 V
= Rated BV

VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 150oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V

IRF120, IRF121 9.2 - - A

IRF122, IRF123 8.0 - - A
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

GSSVGS

DS(ON)ID

IRF120, IRF121 - 0.25 0.27 Ω

= ±20V - - ±100 nA

= 5.6A, VGS = 10V

(Figure 8, 9)

IRF122, IRF123 0.27 0.36 Ω
Forward Transconductance (Note 2) g

VDS > I

fs

D(ON)

x r

DS(ON)MAX

, ID = 5.6A

2.9 4.0 - S

(Figure 12)

Turn-On Delay Time t

d(ON)VDD

= 50V, ID≈ 9.2A, RGS = 18Ω, RL = 5.1Ω

- 8.8 13 ns

(Figures 17, 18) MOSFET Switching Times are

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)

Essentially Independent of Operating

r

Temperature

f

= 10V, ID = 5.6A, VDS = 0.8 x Rated BV

Ig

= 1.5mA (Figures 14, 19, 20)

(REF)

DSS,

-3045ns

-1929ns

-2030ns

- 9.7 15 nC

Gate Charge is Essentially Independent of

Gate to Source Charge Q
Gate to Drain “Miller” Charge Q

Operating Temperature

gs

gd

- 2.2 - nC

- 2.3 - nC

2-2

IRF120, IRF121, IRF122, IRF123

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

ISSVDS

= 25V, VGS = 0V, f = 1MHz

- 350 - pF

(Figure 11)

OSS

RSS

Measured Between the

D

Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die

Measured From the

S

Modified MOSFET
Symbol Showing the
Internal Device
Inductances

D

L

D

- 130 - pF

-36-pF

- 5.0 - nH

- 12.5 - nH
Source Lead, 6mm
(0.25in) From the Flange
and the Source Bonding
Pad

θJC

Free Air Operation - - 30oC/W

θJA

G

L

S

S

- - 2.5oC/W

Continuous Source to Drain Current I
Pulse Source to Drain Current

I

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

SDM

Modified MOSFET

SD

Symbol Showing the

D

Integral Reverse P-N
Junction Rectifier

TJ = 25oC, ISD = 9.2A, VGS = 0V (Figure 13) - - 2.5 V

SD

TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs 55 110 240 ns

rr

TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/µs 0.25 0.53 1.10 µC

RR

G

S

- - 8.0 A

- - 32 A

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 25V, starting TJ = 25oC, L = 640µH, RG = 25Ω, peak IAS= 9.2A (Figures 15, 16).

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