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ODUCT
ODUCT
OBSOLETE PR
Data Sheet March 2000
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HI-5043
IH5043
File Number 3130.3
[ /Title
(IH504
3)
/Subject
(Dual
SPDT
CMOS
Analog
Switch
)
/Autho
r ()
/Keywords
(Intersil
Corporation,
semiconductor,
Dual
SPDT
CMOS
Analog
Switch
)
/Creator ()
/DOCI
NFO
pdfmark
[
Dual SPDT CMOS Analog Switch
The IH5043 analog switch uses an improved, high voltage
CMOS monolithic technology. These devices provide ease
of use and performance advantages not previously
available from solid state switches.
Key performance advantage is TTL compatibility and ultra
low power operation. The quiescent current requirement is
less than 1mA. Also, the IH5043 guarantees Break-BeforeMake switching, accomplished by extending the t
(300ns Typ), so that it exceeds t
time (200ns Typ). This
OFF
ON
time
insures that an ON channel will be turned OFF before an
OFF channel can turn ON. The need for external logic
required to avoid channel to channel shorting during
switching is eliminated.
Part Number Information
TEMP.
PART NUMBER
IH5043CPE 0 to 70 16 Ld PDIP E16.3
IH5043CY 0 to 70 16 Ld SOIC M16.15
RANGE (oC) PACKAGE
PKG.
NO.
Schematic Diagram
FUNCTIONAL DRIVER,TYPICAL DRIVER, GATE (1/2AS SHOWN)
V+
Q
3
5K
Q
1
IN
GND
V
L
Q
2
10K
Q
5
Q
4
2K
400Ω
1K
Q
6
400Ω
V-
S
1
S
3
Q
7
Q
8
FLOATS
FLOATS
Q
9
Q
10
Q
11
Q
12
Features
• See HI504X for Other Functions
• Dual SPDT
• Switches Greater than 20V
Signals with ±15V Supplies
P-P
• Quiescent Current Less than 1mA
• Break-Before-Make Switching t
200ns, tON 300ns (Typ)
OFF
• TTL, DTL, CMOS, PMOS Compatible
Pinout
D
NC
D
S
S
D
NC
D
1
3
3
4
4
2
(PDIP, SOIC)
1
2
3
4
5
6
7
8
IH5043
TOP VIEW
16
S
1
15
IN
1
14
VGND
13
V
12
L
11
V+
IN
10
2
9
S
2
Functional Diagram
V
L
12 11
16
S
1
4
S
D
1
D
3
LOGIC SWITCH 1, 2 SWITCH 3, 4
3
15
IN
1
10
IN
2
9
S
2
5
S
4
13 14
GND
SWITCH STATES SHOWN ARE FOR LOGIC “1” INPUT
TRUTH TABLE
0 Off On
1 On Off
V+
V-
1
D
1
3
D
3
8
D
2
6
D
4
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
IH5043
Absolute Maximum Ratings Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <36V
V+ to VD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <30V
VD to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <30V
VD to VS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<±22V
VL to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <33V
VL to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <30V
VL to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <20V
VIN to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <20V
Continuous Current (S-D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Peak Current S-D (Pulsed 1ms, 10% Duty Cycle Max). . . . . . 70mA
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 70oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
Thermal Resistance (Typical, Note 1) θJA (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Maximum Junction Temperature (Plastic Packages) . . . . . . .150oC
Maximum Storage Temperature. . . . . . . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Electrical Specifications V+ = +15V, V- = -15V, V
= +5V
L
(NOTES 2, 3)
PER CHANNEL PARAMETER TEST CONDITIONS
UNITS0oC25oC70oC
DYNAMIC CHARACTERISTICS
Turn ON Time, t
Turn OFF Time, t
ON
OFF
RL = 1kΩ, V
Figure 6
ANALOG
= -10V to +10V, See
- 1000 - ns
- 500 - ns
Charge Injection, Q See Figure 7 - 20 (Typ) - mV
OFF Isolation, OIRR f = 1MHz, RL= 100Ω,CL≤ 5pF, See Figure 4 - 50 (Typ) - dB
Crosstalk, CCRR One Channel Off; Any Other Channel
- -50 (Typ) - dB
Switches as per Figure 3
DIGITAL INPUT CHARACTERISTICS
Input Logic Current, I
Input Logic Current, I
IN(ON)
IN(OFF)
VIN = 2.4V ±1 ±110µA
VIN = 0.8V ±1 ±110µA
ANALOG SWITCH CHARACTERISTICS
Drain-Source ON Resistance, r
Channel-to-Channel r
DS(ON)
DS(ON)
Match, ∆r
DS(ON)
Minimum Analog Signal Handling Capability, V
Switch OFF Leakage Current, I
Switch ON Leakage Current, I
, I
D(OFF)
D(ON)+IS(ON)
S(OFF)
ANALOG
IS = 10mA, V
ANALOG
= -10V to +10V 80 80 130 Ω
- 30 (Typ) - Ω
- ±10 (Typ) - V
V
= -10V to +10V - ±5 100 nA
ANALOG
VD = VS = -10V to +10V - ±10 100 nA
POWER SUPPLY CHARACTERISTICS
+ Power Supply Quiescent Current, I+ 10 10 100 µA
- Power Supply Quiescent Current, I- 10 10 100 µA
+5V Supply Quiescent Current, I
Ground Quiescent Current, I
GND
L
10 10 100 µA
10 10 100 µA
NOTES:
2. Typical values are for design aid only, not guaranteed and not subject to production testing.
3. Min or Max value unless otherwise specified.
2
Test Circuits and Waveforms
IH5043
100
80
(Ω)
60
DS(ON)
r
40
20
0
-10.0 -5.0 -2.5 0 2.5 5.0 7.5 10.0-7.5
FIGURE 1. r
-120
-100
-80
-60
IS = 1mA
= ±15V
V
S
125oC
25oC
-55oC
V
vs ANALOG INPUT VOLTAGE FIGURE 2. r
DS(ON)
(V)
ANALOG
CCRR = 20LOG
V
OUT
2000mV
(mV
P-P
P-P
)
(Ω)
DS(ON)
r
160
140
120
100
80
60
40
20
0
-10.0 -5.0 -2.5 0 2.5 5.0 7.5 10.0-7.5
IS = 1mA
OFF
STATE
VS = ±10V
VS = ±12V
VS = ±15V
V
vs POWER SUPPLY VOLTAGE
DS(ON)
ANALOG
(V)
100Ω
V
OUT
-40
CROSSTALK (dB)
-20
0
1 10 100 1K 10K 100K 1M
FREQUENCY (Hz)
ON
STATE
FIGURE 3A. CROSSTALK vs FREQUENCY FIGURE 3B. TEST CIRCUIT
FIGURE 3. CROSSTALK
120
100
80
60
40
OFF ISOLATION (dB)
20
0
1 10 100 1K 10K 100K 1M
OIRR = 20LOG
FREQUENCY (Hz)
2000mV
V
OUT
(mV
P-P
P-P
)
AT 1MHz
OFF STATE
2V
P-P
100Ω
2V
AT 1MHz
100Ω
P-P
51Ω
V
51Ω
OUT
FIGURE 4A. OFF ISOLATION vs FREQUENCY FIGURE 4B. TEST CIRCUIT
FIGURE 4. OFF ISOLATION
3