Intersil Corporation HV400MJ-883 Datasheet

HV400MJ/883

August 1997

Features

• This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

• Fast Fall Times. . . . . . . . . . . . . . . . . . .16ns at 10,000pF

• No Supply Current in Quiescent State

• Peak Source Current . . . . . . . . . . . . . . . . . . . . . . . . . .6A

• Peak Sink Current . . . . . . . . . . . . . . . . . . . . . . . . . . .30A

• High Frequency Operation . . . . . . . . . . . . . . . . . 300kHz

Applications

• Switch Mode Power Supplies

• DC/DC Converters

• Motor Controllers

• Uninterruptable Power Supplies

Ordering Information

TEMP.

PART NUMBER

HV400MJ/883 -55 to 125 8 Ld SBDIP D8.3

RANGE (oC) PACKAGE

PKG.

NO.

High Current MOSFET Driver

Description

The HV400MJ/883 is a single monolithic, non-inverting high current driver designed to drive large capacitive loads at high slew rates. The device is optimized for driving single or parallel connected N-Channel power MOSFETs with total gate charge from 5nC to >1000nC. It features two output stages pinned out separately allowing independent control of the MOSFET gate rise and fall times. The current sourcing output stage is an NPN capable of 6A. An SCR provides over 30A of current sinking. The HV400MJ/883 achieves rise and fall times of 54ns and 16ns respectively driving a 10,000pF load.

Special features are included in this part to provide a simple, high speed gate drive circuit for power MOSFETs. The HV400MJ/883 requires no quiescent supply current, however, the input current is approximately 15mA while in the high state. With the internal current steering diodes (Pin 7) and an external capacitor, both the timing and MOSFET gate power come from the same pulse transformer; no special external supply is required for high side switches. No high voltage diode is required to charge the bootstrap capacitor.

The HV400MJ/883 in combination with the MOSFET and pulse transformer makes an isolated power switch building block for applications such as high side switches, secondary side regulation and synchronous rectiﬁcation. The HV400MJ/883 is also suitable for driving IGBTs, MCTs, BJTs and small GTOs.

The HV400MJ/883 is a type of buffer; it does not have input logic level switching threshold voltages. This single stage design achieves propagation delays of 20ns. The output NPN begins to source current when the voltage on Pin 2 is approximately 2V more positive than the voltage at Pin 8.

The output SCR switches on when the input Pin 2 is 1V more negative than the voltage at Pins 3/6. Due to the use of the SCR for current sinking, once the output switches low, the input must not go high again until all the internal SCR charge has dissipated, 0.5µs - 1.5µs later.

Pinout

HV400MJ/883 (SBDIP)

TOP VIEW

V+ SUPPLY

SINK OUTPUT

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207

INPUT

GND

1 2 3 4

SOURCE OUTPUT

DIODES

SINK OUTPUT

GND

Schematic

PIN 1

PIN 2

PIN 3

PIN 4

D3 D2

SCR

PIN 8 PIN 7 PIN 6

PIN 5

File Number 3584.2

HV400MJ/883

Absolute Maximum Ratings Thermal Information

Voltage Between Pin 1 and Pins 4/5 . . . . . . . . . . . . . . . . . . . . . 35V

Input Voltage Pin 7 (Max). . . . . . . . . . . . . . . . . . . . . . . .Pin 1 + 1.5V

Input Voltage Pin 7 (Min) . . . . . . . . . . . . . . . . . . . . . . . Pin 4/5 -1.5V

Input Voltage Pin 2 to Pin 4/5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V

Input Voltage Pin 2 to Pin 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . .-35V

Maximum Clamp Current (Pin 7). . . . . . . . . . . . . . . . . . . . . . . .±300mA

Operating Conditions

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10V to +35V

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. θJA is measured with the component mounted on an evaluation PC board in free air.

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: Supply Voltage = +15V, Unless Otherwise Speciﬁed

PARAMETER SYMBOL CONDITIONS

Input High Differential Voltage (Pin 2 - Pin 8)

Input Low Differential Voltage (Pin 2 - Pin 3/6)

Input High Current I

Input Low Current I

High Output Voltage V

Output Low Leakage I

Low Output Voltage V

Output High Leakage I

Forward Voltage V

Reverse Leakage Current I

= 0V,

OUT

HI = 10mA

OUT

= 12V,

OUT

LO = -3mA

OUT

V I

VIN = +V, I

VIN = 0V, I

= 30V,

PIN 1, 2 SOURCE

PIN 2

OUT

= 0

= -30V 1 25 -80 1.0 µA

= 150mA 1 25 12.1 13.4 V

OUT

= 0V, VIN = 0V 1 25 -1.0 50 µA

= -150mA 1 25 0.8 1.0 V

OUT

VIN = 15V 1 25 -1.0 2.0 µA

ID = 100mA 1 25 0.8 1.4 V

VR = 30V 1 25 -1.0 1.0 µA

Thermal Resistance (Typical, Note 1) θJA (oC/W) θJC (oC/W)

SBDIP Package. . . . . . . . . . . . . . . . . . 91 25

Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . 200oC

Maximum Storage Temperature Range . . . . . . -65oC < TA < 150oC

GROUP A

SUBGROUP

TEMPERATURE

(

C) MIN MAX UNITS

1 25 0.6 2.8 V 2 125 0.1 2.3 V 3 -55 1.0 3.2 V 1 25 -1.1 -0.8 V 2 125 -0.95 -0.6 V 3 -55 -1.2 -0.9 V 1 25 15.0 20.0 mA 2 125 13.0 18.0 mA 3 -55 18.0 25.0 mA

2, 3 125, -55 -80 1.0 µA

2 125 12.2 13.5 V 3 -55 11.0 13.0 V

2, 3 125, -55 -1.0 60 µA

2 125 0.65 0.85 V 3 -55 0.9 1.1 V

2 125 -1.0 100 µA 3 -55 -1.0 2.0 µA

2 125 0.8 1.25 V 3 -55 0.8 1.6 V

2, 3 125, -55 -1.0 1.0 µA

HV400MJ/883

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

This Table Intentionally Left Blank. See AC Parameter on Table 3.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: Supply Voltage = ±15V, Unless Otherwise Speciﬁed (Note 2)

PARAMETER SYMBOL CONDITIONS

TEMPERATURE

(oC) MIN MAX UNITS

Input High Current fPeak I

Peak Output Current I Peak Output Current I Diode (Pin 7) Stored Charge Q Rise Time t Fall Time t Delay Time (Lo to Hi) t Delay Time (Hi to Lo) t Minimum Off Time t

IHP

OP8

OP6

SOURCE

V VIN = 9V, 1µs Pulse, V VIN = 9V, 1µs Pulse, V

= 6A, 1µs Pulse, VIN = 9V,

= 0V

OUT

25 500 900 mA

= 0 25 4 8 A

OUT

= 0 25 25 35 A

OUT

ID = 100mA 25 6 7 nC See Switching Diagram and Test Circuit 25 37 62 ns See Switching Diagram and Test Circuit 25 14 21 ns See Switching Diagram and Test Circuit 25 6 13 ns See Switching Diagram and Test Circuit 25 7 16 ns See Switching Diagram and Test Circuit 25 400 1140 ns

NOTE:

2. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation.

TABLE 4. ELECTRICAL TEST REQUIREMENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2)

Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 3), 2 Group A Test Requirements 1, 2 Groups C and D Endpoints 1

NOTE:

3. PDA applies to Subgroup 1 only. No other subgroups are included in PDA.

HV400MJ/883

Test Descriptions

SYMBOL DESCRIPTION

DC INPUT PARAMETERS

V V

IHP

The differential voltage between the input (pin 2) to the output (pin 8) required to source 10mA The differential voltage between the input (pin 2) to the output (pins 3, 6) required to sink 3mA The current required to maintain the input (pin 2) high with I The input (pin 2) current for a given pulsed output current The current require to maintain the input (pin 2) low

DC OUTPUT PARAMETERS

V I

OP8

V I

OP6

V I

The output (pin 8) voltage with input (pin 2) = V+ The pulsed peak source current form output (pin 8) The output (pin 8) leakage current with the input (pin 2) = Ground The output (pins 3, 6) voltage with the input (pin 2) = Ground The pulsed peak sink current into output (pins 3, 6) The output (pins 3, 6) leakage current with the input (pin 2) = V+ The forward voltage of diode D1 or D7 The reverse leakage current of diode D1 or D7 The time integral of the reverse current at turn off

AC PARAMETERS (See Switching Time Speciﬁcations)

OUT

= 0A

The low to high transition of the output The high to low transition of the output The output propagation delay from the input (pin 2) rising edge The output propagation delay from the input (pin 2) falling edge The minimum time required after an output high to low transition before the next input low to high transition

+ 7 hidden pages