HUF76633P3, HUF76633S3S
Data Sheet October 1999
38A, 100V, 0.036 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
(FLANGE)
HUF76633P3
DRAIN
GATE
GATE
SOURCE
HUF76633S3S
DRAIN
(FLANGE)
Symbol
D
G
S
File Number 4693.3
Features
• Ultra Low On-Resistance
-r
-r
= 0.035Ω, VGS= 10V
DS(ON)
= 0.036Ω, VGS= 5V
DS(ON)
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
©
Electrical Models
- Spice and SABER
©
Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
GS
Curves
Ordering Information
PART NUMBER PACKAGE BRAND
HUF76633P3 TO-220AB 76633P
HUF76633S3S TO-263AB 76633S
NOTE: Whenordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76633S3ST.
Absolute Maximum Ratings T
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (TC= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TC= 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 17, 18
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
= 25oC, Unless Otherwise Specified
C
DSS
DGR
GS
DM
STG
pkg
HUF76633P3,
HUF76633S3S UNITS
100 V
100 V
±16 V
D
D
D
D
D
L
38
39
27
27
Figure 4
145
0.97
-55 to 175
300
260
A
A
A
A
W
W/oC
o
C
o
C
o
C
1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy Inc. 1-888-INTERSIL or 407-727-9207
| Copyright © Intersil Corporation 1999.
HUF76633P3, HUF76633S3S
HUF76633P3, HUF76633S3S
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (V
= 4.5V)
GS
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V
GS
= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
I
D
DSS
VDS = 95V, VGS = 0V - - 1 µA
V
GSS
GS(TH)VGS
DS(ON)ID
θJC
R
θJA
ON
d(ON)
d(OFF)
OFF
ON
d(ON)
d(OFF)
OFF
g(TOT)VGS
g(5)
g(TH)
ISS
OSS
RSS
VGS = ±16V - - ±100 nA
I
D
I
D
TO-220 and TO-263 - - 1.03oC/W
VDD = 50V, ID = 27A
VGS= 4.5V, RGS = 4.7Ω
(Figures 15, 21, 22)
r
f
VDD = 50V, ID = 39A
VGS= 10V,
RGS = 5.1Ω
r
(Figures 16, 21, 22)
f
VGS = 0V to 5V - 30 37 nC
VGS = 0V to 1V - 2 2.4 nC
gs
gd
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
= 250µA, VGS = 0V (Figure 12) 100 - - V
= 250µA, VGS = 0V , TC = -40oC (Figure 12) 90 - - V
= 90V, VGS = 0V, TC = 150oC - - 250 µA
DS
= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 39A, VGS = 10V (Figures 9, 10) - 0.029 0.035 Ω
= 27A, VGS = 5V (Figure 9) - 0.030 0.036 Ω
= 27A, VGS = 4.5V (Figure 9) - 0.031 0.037 Ω
--62oC/W
- - 185 ns
-12-ns
- 110 - ns
-43-ns
-58-ns
- - 150 ns
- - 95 ns
- 7.5 - ns
-55-ns
-63-ns
-83-ns
- - 220 ns
= 0V to 10V VDD = 50V,
-5667nC
ID = 27A,
I
= 1.0mA
g(REF)
(Figures 14, 19, 20)
-6-nC
-15-nC
- 1820 - pF
- 415 - pF
- 115 - pF
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
2
SD
RR
ISD = 27A - - 1.25 V
= 13A - - 1.0 V
I
SD
rr
ISD = 27A, dISD/dt = 100A/µs - - 113 ns
ISD = 27A, dISD/dt = 100A/µs - - 425 nC
Typical Performance Curves
HUF76633P3, HUF76633S3S
HUF76633P3, HUF76633S3S
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
TC, CASE TEMPERATURE (oC)
125
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
50
40
VGS= 10V
30
VGS= 4.5V
20
, DRAIN CURRENT (A)
D
I
10
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs
CASE TEMPERATURE
P
DM
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-2
10
-1
10
θJC
10
1/t2
x R
0
θJC
t
1
+ T
t
2
C
1
10
500
VGS = 10V
100
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
30
-5
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
VGS = 5V
-4
10
-3
10
t, PULSE WIDTH (s)
-2
10
-1
10
FIGURE 4. PEAK CURRENT CAPABILITY
3
TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
o
C DERATE PEAK
25
0
10
175 - T
150
C
1
10