Intersil Corporation HUF76629D3, HUF76629D3S Datasheet

HUF76629D3,HUF76629D3S

Data Sheet October 1999

20A, 100V, 0.054 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET

Packaging

JEDEC TO-251AA JEDEC TO-252AA

DRAIN

(FLANGE)

DRAIN

(FLANGE)

HUF76629D3

SOURCE

DRAIN

GATE

GATE

SOURCE

HUF76629D3S

Symbol

D

G

S

File Number 4692.3

Features

• Ultra Low On-Resistance

-r

-r

= 0.052Ω, VGS= 10V

DS(ON)

= 0.054Ω, VGS= 5V

DS(ON)

• Simulation Models

- Temperature Compensated PSPICE

®

and SABER

©

Electriecal Models

- Spice and SABER Thermal Impedance Models

- www.semi.harris.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

GS

Curves

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76629D3 TO-251AA 76629D
HUF76629D3S TO-252AA 76629D

NOTE: When ordering, use theentire partnumber.Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76629D3ST.

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TC= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

1. TJ = 25oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified

C

DSS

DGR

GS

DM

STG

pkg

HUF76629D3, HUF76629D3S UNITS

100 V
100 V
±16 V

D
D
D
D

D

L

20
20
20
20

Figure 4

110

0.74

-55 to 175

300
260

A
A
A
A

W

W/oC

o

C

o

C

o

C

1

SABER is a Copyright of Analogy, Inc. 1-888-INTERSIL or 407-727-9207

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a registered trademark of MicroSim Corporation. UltraFET™ is a trademark of Intersil Corporation.

| Copyright © Intersil Corporation 1999.

HUF76629D3, HUF76629D3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient

SWITCHING SPECIFICATIONS (V

= 4.5V)

GS

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

I

D

DSS

VDS = 95V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

ON

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS
OSS
RSS

VGS = ±16V - - ±100 nA

I

D

I

D

TO-251AA and TO-252AA - - 1.36oC/W

VDD = 50V, ID = 20A
VGS= 4.5V, RGS = 6.8Ω
(Figures 15, 21, 22)

r

f

VDD = 50V, ID = 20A
VGS= 10V,RGS = 8.2Ω
(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 21 25 nC
VGS = 0V to 1V - 1.2 1.6 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 250µA, VGS = 0V (Figure 12) 100 - - V
= 250µA, VGS = 0V , TC = -40oC (Figure 12) 90 - - V

= 90V, VGS = 0V, TC = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 20A, VGS = 10V (Figures 9, 10) - 0.0415 0.052 Ω
= 20A, VGS = 5V (Figure 9) - 0.046 0.054 Ω
= 20A, VGS = 4.5V (Figure 9) - 0.047 0.055 Ω

- - 100

o

- - 190 ns

-11-ns

- 114 - ns

-38-ns

-60-ns

- - 145 ns

- - 50 ns

- 6.8 - ns

-28-ns

-67-ns

-60-ns

- - 190 ns

= 0V to 10V VDD = 50V,

-3846nC
ID = 20A,
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- 3.3 - nC

-10-nC

- 1285 - pF

- 270 - pF

-65-pF

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD

RR

ISD = 20A - - 1.25 V
I

= 10A - - 1.00 V

SD

rr

ISD = 20A, dISD/dt = 100A/µs - - 110 ns
ISD = 20A, dISD/dt = 100A/µs - - 370 nC

Typical Performance Curves

HUF76629D3, HUF76629D3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

25

20

VGS= 10V

15

VGS= 4.5V

10

, DRAIN CURRENT (A)

D

I

5

0

25

50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

0

2

x R

θJC

+ T

175

t

2

C

1

10

600

100

VGS = 10V

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

VGS = 5V

-4

10

-3

10

-2

10

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

-1

0

10

150

C

1

10