Intersil Corporation HUF76432S3S, HUF76432P3 Datasheet

HUF76432P3, HUF76432S3S

Data Sheet December 1999

55A, 60V, 0.019 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET

Packaging

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

(FLANGE)

HUF76432P3

DRAIN

GATE

GATE

SOURCE

HUF76432S3S

DRAIN

(FLANGE)

Symbol

D

G

S

File Number 4673.3

Features

• Ultra Low On-Resistance

-r

-r

= 0.017Ω, VGS= 10V

DS(ON)

= 0.019Ω, VGS= 5V

DS(ON)

• Simulation Models

- Temperature Compensated PSPICE

®

and SABER

™

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.Intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

GS

Curves

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76432P3 TO-220AB 76432P
HUF76432S3S TO-263AB 76432S

NOTE: Whenordering,usethe entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76432S3ST.

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TC= 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 17, 18

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

1. TJ = 25oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified

C

DSS

DGR

GS

DM

STG

pkg

HUF76432P3, HUF76432S3S UNITS

60 V
60 V

±16 V

D
D
D
D

D

L

55
59
39
37

Figure 4

130

0.87

-55 to 175

300
260

A
A
A
A

W

mW/oC

o

C

o

C

o

C

6-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE

SABER™ is a trademark of Analogy, Inc. 1-888-INTERSIL or 321-724-7143

®

is a registered trademark of MicroSim Corporation.

| Copyright © Intersil Corporation 1999.

HUF76432P3, HUF76432S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient

SWITCHING SPECIFICATIONS (V

= 4.5V)

GS

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Reverse Transfer Capacitance Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

I

D

DSS

VDS = 55V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

ON

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS
OSS
RSS

VGS = ±16V - - ±100 nA

I

D

I

D

TO-220AB and TO-263AB - - 1.15oC/W

VDD = 30V, ID = 37A
VGS= 4.5V, RGS = 6.2Ω
(Figures 15, 21, 22)

r

f

VDD = 30V, ID = 60A
VGS= 10V, RGS = 6.8Ω
(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 24 29 nC
VGS = 0V to 1V - 1.6 2 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 250µA, VGS = 0V (Figure 12) 60 - - V
= 250µA, VGS = 0V , TC = -40oC (Figure 12) 55 - - V

= 50V, VGS = 0V, TC = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 59A, VGS = 10V (Figures 9, 10) - 0.014 0.017 Ω
= 39A, VGS = 5V (Figure 9) - 0.016 0.019 Ω
= 37A, VGS = 4.5V (Figure 9) - 0.017 0.021 Ω

--62oC/W

- - 400 ns

-14-ns

- 250 - ns

-26-ns

-82-ns

- - 160 ns

- - 165 ns

- 9.0 - ns

- 100 - ns

-53-ns

- 107 - ns

- - 240 ns

= 0V to 10V VDD = 30V,

-4453nC
ID = 39A,
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- 4.3 - nC

- 9.8 - nC

- 1765 - pF

- 470 - pF

-75-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

6-2

SD

RR

ISD = 39A - - 1.25 V
I

= 20A - - 1.00 V

SD

rr

ISD = 39A, dISD/dt = 100A/µs--65ns
ISD = 39A, dISD/dt = 100A/µs - - 120 nC

Typical Performance Curves

HUF76432P3, HUF76432S3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

70

60

VGS= 10V

50

40

30

, DRAIN CURRENT (A)

20

D

I

VGS= 4.5V

10

0

25

50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

t

1

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

0

2

x R

θJC

+ T

175

t

2

C

1

10

700

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

40

-5

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

6-3

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

0

10

C

150

1

10