Intersil Corporation HUF76407DK8 Datasheet

HUF76407DK8

Data Sheet October 1999

3.5A, 60V, 0.105 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET

Packaging

JEDEC MS-012AA

BRANDING DASH

5

1

2

3

4

Symbol

SOURCE1 (1)

GATE1 (2)

SOURCE2 (3)

GATE2 (4)

DRAIN 1 (8)
DRAIN 1 (7)

DRAIN 2 (6)
DRAIN 2 (5)

File Number 4712.4

Features

• Ultra Low On-Resistance

-r

-r

= 0.090Ω, VGS= 10V

DS(ON)

= 0.105Ω, VGS= 5V

DS(ON)

• Simulation Models

- Temperature Compensated PSPICE

®

and SABER

©

Electrical Models

- Spice and SABER Thermal Impedance Models

- www.semi.Intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Switching Time vs R

GS

Curves

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76407DK8 MS-012AA 76407DK8

NOTE: Whenordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76407DK8T.

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TA= 25oC, VGS = 5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 5V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.5V) (Figure 2) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 17, 18

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 1 second.

3. 228oC/W measured using FR-4 board with 0.006 in2 (3.87 mm2) copper pad at 1000 seconds.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified

A

DSS

DGR

GS

DM

STG

pkg

HUF76407DK8 UNITS

60 V
60 V

±16 V

D
D
D
D

D

L

3.5

3.8

1.0

1.0

Figure 4

2.5
20

-55 to 150

300
260

A
A
A
A

W

mW/oC

o

C

o

C

o

C

1

SABER is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

| Copyright © Intersil Corporation 1999

HUF76407DK8

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambi­ent

SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Reverse Transfer Capacitance Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

ID = 250µA, VGS = 0V , TA = -40oC (Figure 12) 55 - - V

DSS

VDS = 55V, VGS = 0V - - 1 µA
VDS = 50V, VGS = 0V, TA = 150oC - - 250 µA

GSS

GS(TH)VGS

DS(ON)ID

VGS = ±16V - - ±100 nA

ID = 1.0A, VGS = 5V (Figure 9) - 0.088 0.105 Ω
ID = 1.0A, VGS = 4.5V (Figure 9) - 0.092 0.110 Ω

R

θJA

Pad Area = 0.76 in2(490.3 mm2) (Note 2) - - 50
Pad Area = 0.027 in2 (17.4 mm2) (Figure 23) - - 191
Pad Area = 0.006 in2 (3.87 mm2) (Figure 23) - - 228

ON

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS
OSS
RSS

VDD = 30V, ID = 1.0A
VGS= 4.5V, RGS = 27Ω
(Figures 15, 21, 22)

r

f

VDD = 30V, ID = 3.8A
VGS= 10V,
RGS =30Ω
(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 5.3 6.4 nC
VGS = 0V to 1V - 0.42 0.5 nC

gs
gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

= 250µA, VGS = 0V (Figure 12) 60 - - V

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 3.8A, VGS = 10V (Figures 9, 10) - 0.075 0.090 Ω

o

C/W

o

C/W

o

C/W

- - 57 ns

-8-ns

-30-ns

-25-ns

-25-ns

- - 75 ns

- - 24 ns

-5-ns

-11-ns

-46-ns

-31-ns

- - 116 ns

= 0V to 10V VDD = 30V,

- 9.4 11.2 nC
ID = 1.0A,
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- 1.05 - nC

- 2.4 - nC

- 330 - pF

- 100 - pF

-18-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD

RR

ISD = 3.8A - - 1.25 V
ISD = 1.0A - - 1.00 V

rr

ISD = 1.0A, dISD/dt = 100A/µs--48ns
ISD = 1.0A, dISD/dt = 100A/µs--89nC

Typical Performance Curves

HUF76407DK8

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

0.01

Z

THERMAL IMPEDANCE

0.001

-5

10

-4

10

SINGLE PULSE

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

4

VGS= 10V, R

θJA

= 50oC/W

3

2

, DRAIN CURRENT (A)

D

1

I

VGS= 4.5V, R

= 228oC/W

θJA

0

25

50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs

AMBIENT TEMPERATURE

R

θJA

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

θJA

1/t2

x R

10

2

θJA

+ T

= 228oC/W

t

2

A

3

10

200

100

10

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

1

-5

10

VGS = 5V

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

= 228oC/W

θJA

-3

10

-2

10

-1

10

0

10

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

1

150 - T

25

125

2

10

A

3

10

Typical Performance Curves (Continued)

HUF76407DK8

500

100

10

, DRAIN CURRENT (A)

1

D

I

0.1

R

= 228oC/W

θJA

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

V

DS

DS(ON)

10 200

, DRAIN TO SOURCE VOLTAGE (V)

SINGLE PULSE
TJ = MAX RATED

= 25oC

T

A

100µs

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

20

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

15

10

TJ = -55oC

TJ = 150oC

1ms

10ms

100

TJ = 25oC

50

10

, AVALANCHE CURRENT (A)

AS

I

1

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

STARTING TJ = 150oC

0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

20

15

10

= 10V

V

GS

VGS = 5V

= 4.5V

V

GS

= 4V

V

GS

VGS = 3.5V

DRAIN CURRENT (A)

D,

5

I

0

2.0 2.5 3.0 3.5 4.5 5.0
VGS, GATE TO SOURCE VOLTAGE (V)

4.0

, DRAIN CURRENT (A)

5

D

I

TA = 25oC

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS

150

ID = 3.8A

120

ID = 1A

, DRAIN TO SOURCE

90

ON RESISTANCE (mΩ)

DS(ON)

r

60

246810

3579

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

1.0

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

0.5

0.5

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = 3V

VGS = 10V, ID = 3.8A

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4

FIGURE 10. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE