Intersil Corporation HUF76145S3S Datasheet

HUF76145P3, HUF76145S3S
75A, 30V, 0.0045 Ohm,N-Channel, Logic Level UltraFET Power MOSFETs
These N-Channel powerMOSFETs are manufactured using the innovative UltraFET™ process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA76145.
Ordering Information
PART NUMBER PACKAGE BRAND
September 1999Data Sheet File Number
Features
• Logic Level Gate Drive
• 75A, 30V
• Ultra Low On-Resistance, r
DS(ON)
= 0.0045
• Temperature Compensating PSPICE™ Model
• Temperature Compensating SABER Model
• Thermal Impedance SPICE Model
• Thermal Impedance SABER Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
4401.7
HUF76145P3 TO-220AB 76145P HUF76145S3S TO-263AB 76145S
NOTE: Whenordering, use the entire partnumber.Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF76145S3ST.
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
GATE SOURCE
G
S
DRAIN
(FLANGE)
6-178
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET™ is a Trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
HUF76145P3, HUF76145S3S
Absolute Maximum Ratings T
=25oC,Unless Otherwise Specified
C
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
DGR
GS
30 V 30 V
±16 V
Drain Current
Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TC= 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D D D
DM
AS
D
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
75 75 75
Figure 4
Figures 6, 17, 18
270
2.17
-40 to 150
300 260
A A A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V Drain to Source On Resistance r
GS(TH)VGS
DS(ON)ID
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R Thermal Resistance Junction to Ambient R SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time t Turn-On Delay Time t
d(ON)
Rise Time t Turn-Off Delay Time t
d(OFF)
Fall Time t Turn-Off Time t
DSSID
DSS
GSS
θJC
θJA
ON
r
f
OFF
= 250µA, VGS = 0V (Figure 12) 30 - - V VDS = 25V, VGS = 0V - - 1 µA VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA VGS = ±16V - - ±100 nA
= VDS, ID = 250µA (Figure 11) 1 - 3 V
= 75A, VGS = 10V (Figure 9, 10) - 0.0035 0.0045 ID = 75A, VGS = 5V (Figure 9) - 0.0043 0.0058 ID = 75A, VGS = 4.5V (Figure 9) - 0.0046 0.0065
(Figure 3) - - 0.46 TO-220 and TO-263 - - 62
VDD = 15V, ID≅ 75A,
- - 255 ns
o
o
C/W C/W
RL = 0.20, VGS= 4.5V, RGS = 2.5 (Figures 15, 20, 21)
-26-ns
- 145 - ns
-35-ns
-39-ns
- - 110 ns
6-179
HUF76145P3, HUF76145S3S
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q Gate Charge at 5V Q Threshold Gate Charge Q Gate to Source Gate Charge Q Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
ON
VDD = 15V, ID≅ 75A, RL = 0.20, VGS= 10V,
d(ON)
RGS = 2.2 (Figures 16, 20, 21)
r
d(OFF)
f
OFF
g(TOT)VGS
g(5)
g(TH)
VGS = 0V to 5V - 73 88 nC VGS = 0V to 1V - 4.65 5.6 nC
gs
gd
= 0V to 10V VDD = 15V,
ID≅ 75A, RL = 0.20 I
= 1.0mA
g(REF)
(Figures 14, 19, 20)
- - 110 ns
-16-ns
-57-ns
-53-ns
-38-ns
- - 135 ns
- 130 156 nC
- 12.30 - nC
- 40.00 - nC
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V Reverse Recovery Time t Reverse Recovered Charge Q
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
TA, AMBIENT TEMPERATURE (oC)
ISS
OSS
RSS
SD
rr
RR
VDS = 25V, VGS = 0V,
- 4900 - pF f = 1MHz (Figure 13)
- 2520 - pF
- 560 - pF
ISD = 75A - - 1.25 V ISD = 75A, dISD/dt = 100A/µs - - 115 ns ISD = 75A, dISD/dt = 100A/µs - - 255 nC
80
VGS=10V
60
VGS=4.5V
40
, DRAIN CURRENT (A)
20
D
I
125
0
25 50 75 100 125
50
TC, CASE TEMPERATURE (oC)
150
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
6-180
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
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