Intersil Corporation HUF76132SK8 Datasheet

HUF76132SK8

Data Sheet September 1999 File Number

11.5A, 30V, 0.0115 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET

This N-Channel power MOSFET is
manufactured using the innov ative
UltraFET™ process. This advanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where pow er
efficiency is important, such as switching regulators, switching
converters, motor drivers, rela y driv ers , low-voltage bus
switches, and power management in portable and battery­operated products.

Formerly developmental type TA76131.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76132SK8 MS-012AA 76132SK8

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76132SK8T.

4753.1

Features

• Logic Level Gate Drive

• 11.5A, 30V

• Simulation Models

- Temperature Compensated PSPICE

®

and SABER

©

Electrical Models

- Spice and SABER

™

Thermal Impedance Models

- www.Intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

SOURCE(1)

DRAIN(8)

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

SOURCE(2)

SOURCE(3)

GATE(4)

5

3

4

DRAIN(7)

DRAIN(6)

DRAIN(5)

1

SABER is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

| Copyright © Intersil Corporation 1999

HUF76132SK8

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TA= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 5V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

11.5

3.3

3.2

Figure 4

Figures 6, 17, 18

2.5
20

-55 to 150

300
260

A
A
A

W

mW/oC

o

C

o

C

o

C

NOTES:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board with 0.76 in2 copper pad at 10 second.

3. 189oC/W measured using FR-4 board with 0.0115 in2 copper pad at 1000 seconds.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

DSSID

DSS

GSS

θJA

ON

r

f

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA
VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 11.5A, VGS = 10V (Figures 9, 10) - 0.0105 0.0115 Ω
ID = 3.3A, VGS = 5V (Figure 9) - 0.0125 0.015 Ω
ID = 3.2A, VGS = 4.5V (Figure 9) - 0.013 0.016 Ω

Pad Area = 0.76 in2 (Note 2) - - 50
Pad Area = 0.054 in2 (Figure 23) - - 152
Pad Area = 0.0115 in2 (Figure 23) - - 189

VDD = 15V, ID≅ 3.2A, RL = 4.7Ω,
VGS= 4.5V, RGS = 6.8Ω
(Figures 15, 21, 22)

- - 80 ns

-18-ns

o
o
o

C/W
C/W
C/W

-36-ns

-45-ns

-30-ns

- - 115 ns

2

HUF76132SK8

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Reverse Transfer Capacitance Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ON

VDD = 15V, ID≅ 11.5A, RL = 1.3Ω,
VGS= 10V,

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS

RGS = 6.8Ω
(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 24 29 nC
VGS = 0V to 1V - 1.63 1.95 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS
RSS

(Figure 13)

= 0V to 10V VDD = 15V, ID≅ 3.3A,

RL = 4.5Ω
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- - 70 ns

-10-ns

-36-ns

-65-ns

-37-ns

- - 155 ns

-4352nC

-4-nC

-10-nC

- 1560 - pF

- 735 - pF

- 150 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

SD

rr

RR

ISD = 11.5A - - 1.25 V
ISD = 3.3A 1.1 V
ISD = 3.3A, dISD/dt = 100A/µs--58ns
ISD = 3.3A, dISD/dt = 100A/µs--87nC

12

125

9

6

, DRAIN CURRENT (A)

3

D

I

0

25

VGS= 4.5V, R

50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

VGS= 10V, R

= 189oC/W

θJA

θJA

= 50oC/W

FIGURE 1. NORMALIZED POWERDISSIPATION vs AMBIENT

TEMPERATURE

3

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

HUF76132SK8

Typical Performance Curves

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

1

0.02

0.01

0.1

, NORMALIZED

θJA

Z

THERMAL IMPEDANCE

0.01

SINGLE PULSE

0.001

1000

100

10

-5

VGS = 10V

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

VGS = 5V

(Continued)

-3

10

-2

10

-1

10

10

t, RECTANGULAR PULSE DURATION (s)

R

R

= 50oC/W

θJA

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

0

= 50oC/W

θJA

P

DM

2

x R

θJA

θJA

1

10

2

10

TC = 25oC

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I

25

150 - T

t

1

125

t

+ T

2

A

3

10

A

10

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

1

-5

10

-4

10

-3

10

FIGURE 4. PEAK CURRENT CAPABILITY

500

100

10

OPERATION IN THIS
AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r

1

DS(ON)

BV

DS MAX

= 30V

1 10 100

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

TJ = MAX RATED
T

= 25oC

A

100µs

1ms

10ms

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

-2

10

-1

10

0

10

1

10

2

10

3

10

t, PULSE WIDTH (s)

100

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

DSS

- VDD)

DSS

- VDD) +1]

STARTING TJ = 25oC

10

, AVALANCHE CURRENT (A)

AS

I

STARTING TJ = 150oC

1

0.1

1 10 100

tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

4