Intersil Corporation HUF76132P3, HUF76132S3S Datasheet

HUF76132P3, HUF76132S3S

Data Sheet September 1999 File Number

75A, 30V, 0.011 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs

These N-Channel power MOSFETs
are manufactured using the
innovativ eUltraFET™process. This

advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This deviceis capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA76132.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76132P3 TO-220AB 76132P
HUF76132S3S TO-263AB 76132S

NOTE: Whenordering, usethe entire part number. Add thesuffix Tto
obtain the TO-263AB variant in tape and reel, e.g., HUF76132S3ST.

Features

• Logic Level Gate Drive

• 75A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

• Temperature Compensating SABER

DS(ON)

= 0.011Ω

®

Model

©

Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

4553.4

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

6-130

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

SABER is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

HUF76132P3, HUF76132S3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TC= 100oC, VGS = 5V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

75
44
41

Figure 4

Figures 6, 17, 18

120

0.97

-40 to 150

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

DSSID

DSS

GSS

θJC
θJA

ON

r

f

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA
VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 75A, VGS = 10V (Figure 9, 10) - 0.0085 0.011 Ω
ID = 44A, VGS = 5V (Figure 9) - 0.013 0.016 Ω
ID = 41A, VGS = 4.5V (Figure 9) - 0.015 0.018 Ω

(Figure 3) - - 1.03oC/W
TO-220, TO-262 and TO-263 - - 62

VDD = 15V, ID≅ 41A,
RL = 0.366Ω, VGS= 4.5V,
RGS = 6.2Ω
(Figures 15, 21, 22)

- - 185 ns

-17-ns

- 105 - ns

o

C/W

-33-ns

-42-ns

- - 113 ns

6-131

HUF76132P3, HUF76132S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ON

VDD = 15V, ID≅ 75A,
RL = 0.20, VGS= 10V,

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS

RGS = 6.8Ω
(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 25 30 nC
VGS = 0V to 1V - 1.8 2.2 nC

gs
gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS
RSS

(Figure 13)

= 0V to 10V VDD = 15V, ID≅ 44A,

RL = 0.341Ω
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- - 72 ns

-11-ns

-37-ns

-65-ns

-42-ns

- - 160 ns

-4452nC

- 4.80 - nC

- 13.50 - nC

- 1650 - pF

- 850 - pF

- 200 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

Unless Otherwise Specified

SD

rr

RR

ISD = 44A - - 1.25 V
ISD = 44A, dISD/dt = 100A/µs--71ns
ISD = 44A, dISD/dt = 100A/µs - - 104 nC

80

VGS= 10V

60

125

40

, DRAIN CURRENT (A)

20

D

I

0

25 50 75 100 125 150

VGS = 4.5V

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

6-132

FIGURE 2. MAXIMUM CONTINUOUSDRAIN CURRENTvs

CASE TEMPERATURE