Intersil Corporation HUF76131SK8 Datasheet

TM

HUF76131SK8

Data Sheet June 2000 File Number 4396.5

10A, 30V, 0.013 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET

This N-Channel power MOSFET is

®

manufactured using the innovative
UltraFET process. This advanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA76131.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76131SK8 MS-012AA 76131SK8

NOTE: When ordering, use theentire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76131SK8T.

Features

• Logic Level Gate Drive

• 10A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

DS(ON)

= 0.013Ω

®

Model

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

SOURCE(1)

SOURCE(2)

SOURCE(3)

DRAIN(8)

DRAIN(7)

DRAIN(6)

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

GATE(4)

5

3

4

DRAIN(5)

1

UltraFET® is a registered trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000.

HUF76131SK8

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

HUF76131SK8 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain Current

Continuous (Figure 2) (Notes 2, 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

GS

D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L

pkg

30 V
30 V

±16 V

10

Figure 5

Figure 6

2.5

0.02

-55 to 150
300

260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

gs

gd

ISS
OSS
RSS

θJA

= 250µA, VGS = 0V (Figure 11) 30 - - V

= VDS, ID = 250µA (Figure 10) 1 - - V

VDS = 25V, VGS = 0V - - 1 µA

= 25V, VGS = 0V, TA = 150oC - - 250 µA

V

DS

VGS = ±16V - - ±100 nA

= 10A, VGS = 4.5V (Figures 9,14) - 0.017 0.018 Ω
= 10A, VGS = 5V - 0.015 0.017 Ω

I

D

= 10A, VGS = 10V - 0.011 0.013 Ω

I

D

VDD = 15V, ID≅ 10A, RL = 1.5Ω, VGS= 5V,
RGS = 6.8Ω
(Figure 15)

- - 115 ns

-15-ns

-61-ns

-33-ns

-36-ns

- - 105 ns

= 0V to 10V VDD = 15V, ID≅ 10A,
VGS = 0V to 5V - 22 26 nC
VGS = 0V to 1V - 1.53 1.85 nC

RL= 1.5Ω, I
(Figure 13)

g(REF)

= 1.0mA

-3947nC

- 4.00 - nC

- 9.50 - nC

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

- 1605 - pF

- 685 - pF

- 115 - pF

Pad Area = 0.76 in2 (Note 2) - - 50

2

Pad Area = 0.054 in
Pad Area = 0.0115 in

(See TB377) - - 143.4oC/W

2

(See TB377) - - 177.3oC/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Reverse Recovery Time t
Reverse Recovered Charge Q

RR

NOTES:

o

C/W measured using FR-4 board with 0.76 in2 footprint at 10 seconds.

2. 50

3. 177.3oC/W measured using FR-4 board with 0.0115 in2 footprint at 1000 seconds.

2

ISD = 10A - - 1.25 V

= 2.3A - - 1.1 V

I

SD

ISD = 2.3A, dISD/dt = 100A/µs--57ns

rr

ISD = 2.3A, dISD/dt = 100A/µs--81nC

Typical Performance Curves

HUF76131SK8

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

1

0.05

0.02

0.01

0.1

, NORMALIZED

JA

θ

Z

0.01

THERMAL IMPEDANCE

0.001

-5

10

-4

10

SINGLE PULSE

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

12

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

θ

2

2

x R

JA

+ T

JA

θ

2

10

A

3

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

100

OPERATION IN THIS

10

, DRAIN CURRENT (A)

D

I

AREA MAY BE
LIMITED BY r

1

V

DS

TJ = MAX RATED

= 25oC

T

A

100µs

1ms

DS(ON)

V

DSS(MAX)

= 30V

10ms

10 1001

, DRAIN TO SOURCE VOLTAGE (V)

1000

100

, PEAK CURRENT (A)

DM

I

VGS = 5V

FOR TEMPERATURES
ABOVE 25

10

CURRENT AS FOLLOWS:

1

-5

10

I = I

o

C DERATE PEAK

25

-4

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

150 - T

A

125

-3

10

10

t, PULSE WIDTH (s)

TA = 25oC

-2

-1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

3

0

10

1

10