Intersil Corporation HUF76129P3, HUF76129S3S Datasheet

HUF76129P3, HUF76129S3S

Data Sheet September 1999 File Number 4395.6

56A, 30V, 0.016 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs

These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET™ process.

This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA76129.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76129P3 TO-220AB 76129P
HUF76129S3S TO-263AB 76129S

NOTE: Whenordering, use the entire part number.AddthesuffixTto
obtain the TO-263AB variant in tape and reel, e.g., HUF76129S3ST.

Features

• Logic Level Gate Drive

• 56A, 30V

Ultra Low On-Resistance

•

• Temperature Compensating PSPICE

• Temperature Compensating SABER

, r

DS(ON)

= 0.016Ω

®

Model

©

Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

1

SABER is a Copyright of Analogy, Inc. http://www.intersil.comor407-727-9207

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

| Copyright © Intersil Corporation 19999

HUF76129P3, HUF76129S3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

56
35
34

Figure 4

Figures 6, 17, 18

105

0.83

-40 to 150

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

DSSID

DSS

GSS

θJC
θJA

ON

r

f

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA
VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 56A, VGS = 10V (Figure 9, 10) - 0.014 0.016 Ω
ID = 35A, VGS = 5V (Figure 9) - 0.0175 0.021 Ω
ID = 34A, VGS = 4.5V - 0.0195 0.023 Ω

(Figure 3) - - 1.20
TO-220 and TO-263 - - 62

VDD = 15V, ID≅ 34A,
RL = 0.441Ω, VGS= 4.5V,
RGS = 6.8Ω
(Figures 15, 21, 22)

- - 160 ns

-14-ns

-90-ns

o
o

C/W
C/W

-28-ns

-32-ns

- - 90 ns

2

HUF76129P3, HUF76129S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ON

VDD = 15V, ID≅ 56A,
RL = 0.268Ω, VGS= 10V,

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS

RGS = 8.2Ω
(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 19 23 nC
VGS = 0V to 1V - 1.4 1.7 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS
RSS

(Figure 13)

= 0V to 10V VDD = 15V,

ID≅ 35A,
RL = 0.429Ω
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- - 62 ns

-11-ns

-30-ns

-68-ns

-35-ns

- - 155 ns

-3745nC

- 4.50 - nC

- 10.30 - nC

- 1350 - pF

- 700 - pF

- 160 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

SD

rr

RR

ISD = 35A - - 1.25 V
ISD = 35A, dISD/dt = 100A/µs--60ns
ISD = 35A, dISD/dt = 100A/µs - - 105 nC

60

125

50

40

VGS= 4.5V

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125

TC, CASE TEMPERATURE (oC)

VGS= 10V

150

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

3

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE