Intersil Corporation HUF76129D3, HUF76129D3S Datasheet

HUF76129D3, HUF76129D3S

Data Sheet September 1999 File Number

20A, 30V, 0.016 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs

These N-Channel powerMOSFETs
are manufactured using the
innovative UltraFET™ process.

This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA76129.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76129D3 TO-251AA 76129D
HUF76129D3S TO-252AA 76129D

NOTE: When ordering, use the entirepart number.Add the suffix Tto
obtain the TO-252AA variant in tape and reel, e.g., HUF76129D3ST.

Features

• Logic Level Gate Drive

• 20A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

• Temperature Compensating SABER

DS(ON)

= 0.016Ω

®

Model

©

Mode

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

4394.5

Packaging

(FLANGE)

DRAIN

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

1

SABER

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE

©

is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

®

is a registered trademark of MicroSim Corporation.

HUF76129D3, HUF76129D3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TC= 100oC, VGS = 5V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

20
20
20

Figure 4

Figures 6, 17, 18

105

.83

-55 to 150

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TA = 25

o

C, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
SWITCHING SPECIFICATIONS (V

GS

= 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

DSSID

DSS

GSS

θJC
θJA

ON

r

f

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V

VDS = 25V, VGS = 0V - - 1 µA

= 25V, VGS = 0V, TC = 150oC - - 250 µA

V

DS

VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 20A, VGS = 10V (Figure 9, 10) - 0.014 0.016 Ω

I

= 20A, VGS = 5V (Figure 9) - 0.0175 0.021 Ω

D

= 20A, VGS = 4.5V (Figure 9) - 0.0195 0.023 Ω

I

D

(Figure 3) - - 1.20
TO-251, TO-252 - - 100

VDD = 15V, ID≅ 20A, RL = 0.75Ω,
VGS= 4.5V, RGS = 10Ω
(Figures 15, 21, 22)

- - 275 ns

-20-ns

o
o

C/W
C/W

- 165 - ns

-30-ns

-54-ns

- - 125 ns

2

HUF76129D3, HUF76129D3S

Electrical Specifications TA = 25

o

C, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Chatge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ON

VDD = 15V, ID≅ 20A, RL = 0.75Ω,
VGS= 10V, RGS = 10Ω

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS

(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 22 26 nC
VGS = 0V to 1V - 1.4 1.7 nC

gs

gd

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 13)

OSS
RSS

= 0V to 10V VDD = 15V, ID≅ 20A,

RL = 0.75Ω
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- - 80 ns

-7-ns

-47-ns

-60-ns

-54-ns

- - 110 ns

-3846nC

- 3.70 - nC

- 11.20 - nC

- 1425 - pF

- 720 - pF

- 170 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

SD

rr

RR

ISD = 20A - - 1.25 V
ISD = 20A, dISD/dt = 100A/µs--72ns
ISD = 20A, dISD/dt = 100A/µs - - 107 nC

25

20

VGS=10V

VGS=4.5V

150

125

15

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

3

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE