Intersil Corporation HUF76121SK8 Datasheet

HUF76121SK8

Data Sheet April 1999 File Number 4737

8A, 30V, 0.023 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET

This N-Channel power MOSFET is
manufactured using the innov ative
UltraFET™ process. This advanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where pow er
efficiency is important, such as switching regulators, switching
converters, motor drivers, rela y driv ers , low-voltage bus
switches, and power management in portable and battery­operated products.

Formerly developmental type TA76121.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76121SK8 MS-012AA 76121SK8

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76121SK8T.

Features

• Logic Level Gate Drive

• 8A, 30V

• Simulation Models

- Temperature Compensated PSPICE™ and SABER

©

Electrical Models

- Spice and SABER

©

Thermal Impedance Models

- www.Intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Related Literature

- TB370, “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

NC (1)

DRAIN(8)

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

SOURCE(2)

SOURCE(3)

GATE(4)

5

3

4

DRAIN(7)

DRAIN(6)

DRAIN(5)

1

SABER

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

©

is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.

HUF76121SK8

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TA= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 5V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

8

2.5

2.3

Figure 4

Figures 6, 17, 18

2.5
20

-55 to 150

300
260

A
A
A

W

mW/oC

o

C

o

C

o

C

NOTES:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board with 0.76 in2 footprint at 10 seconds.

3. 189oC/W measured using FR-4 board with 0.0115 in2 footprint at 1000 seconds.

Electrical Specifications T

=25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

DSSID

DSS

GSS

θJA

ON

r

f

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA
VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 8A, VGS = 10V (Figures 9, 10) - 0.018 0.023 Ω
ID = 2.5A, VGS = 5V (Figure 9) - 0.021 0.028 Ω
ID = 2.3A, VGS = 4.5V (Figure 9) - 0.022 0.031 Ω

Pad Area = 0.76 in2 (Note 2) - - 50
Pad Area = 0.054 in2 (Figure 23) - - 152
Pad Area = 0.0115 in2 (Figure 23) - - 189

VDD = 15V, ID≅ 2.3A, RL = 6.5Ω,
VGS= 4.5V, RGS = 10Ω
(Figures 15, 21, 22)

- - 85 ns

-17-ns

o
o
o

C/W
C/W
C/W

-40-ns

-40-ns

-30-ns

- - 105 ns

2

HUF76121SK8

Electrical Specifications T

=25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Reverse Transfer Capacitance Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ON

VDD= 15V, ID≅ 8A, RL=1.9Ω,VGS= 10V,
RGS = 12Ω

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS

(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 14 17 nC
VGS = 0V to 1V - 0.8 1.0 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS
RSS

(Figure 13)

= 0V to 10V VDD = 15V, ID≅ 2.5A,

RL = 6.0Ω
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- - 60 ns

-10-ns

-29-ns

-64-ns

-40-ns

- - 155 ns

-2429nC

- 1.9 - nC

-7-nC

- 850 - pF

- 465 - pF

- 100 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

SD

rr

RR

ISD = 8A - - 1.25 V
ISD = 2.5A 1.10 V
ISD = 2.5A, dISD/dt = 100A/µs--65ns
ISD = 2.5A, dISD/dt = 100A/µs - - 100 nC

10

8

125

VGS= 10V, R

6

4

, DRAIN CURRENT (A)

D

I

2

VGS= 4.5V, R

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

= 189oC/W

θJA

θJA

= 50oC/W

FIGURE 1. NORMALIZED POWER DISSIPATIONvs AMBIENT

TEMPERATURE

3

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs

AMBIENT TEMPERATURE

HUF76121SK8

Typical Performance Curves

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

Z

0.01

THERMAL IMPEDANCE

0.001

1000

100

-5

10

VGS = 10V

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

VGS = 5V

(Continued)

SINGLE PULSE

-3

10

-2

10

-1

10

0

10

t, RECTANGULAR PULSE DURATION (s)

R

θJA

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

1

10

= 50oC/W

TC = 25oC
FOR TEMPERATURES

ABOVE 25
CURRENT AS FOLLOWS:

I = I

P

DM

1/t2

x R

θJA

o

C DERATE PEAK

150 - T

25

10

R

125

θJA

θJA

2

= 50oC/W

t

1

t

2

+ T

A

A

3

10

, PEAK CURRENT (A)
I

TRANSCONDUCTANCE

DM

MAY LIMIT CURRENT

10

IN THIS REGION

5

-5

10

-4

10

-3

10

FIGURE 4. PEAK CURRENT CAPABILITY

500

100

OPERATION IN THIS

10

AREA MAY BE
LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

BV

DSS MAX

10 1001

TJ = MAX RATED

= 25oC

T

A

= 30V

100µs

1ms

10ms

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

-2

10

-1

10

0

10

1

10

2

10

3

10

t, PULSE WIDTH (s)

100

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

DSS

- VDD)

DSS

- VDD) +1]

STARTING TJ = 25oC

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01

STARTING TJ = 150oC

0.1

1 10 100

tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVESWITCHING

CAPABILITY

4