Intersil Corporation HUF76121P3, HUF76121S3S Datasheet

HUF76121P3, HUF76121S3S

Data Sheet September 1999 File Number

47A, 30V, 0.021 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs

These N-Channel powerMOSFETs
are manufactured using the
innovative UltraFET™ process.

This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA76121.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76121P3 TO-220AB 76121P
HUF76121S3S TO-263AB 76121S

NOTE: When ordering, use the entirepart number.Add the suffix Tto
obtain the TO-263AB variant in tape and reel, e.g., HUF76121S3ST.

Features

• Logic Level Gate Drive

• 47A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

• Temperature Compensating SABER

DS(ON)

= 0.021Ω

®

Model

©

Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

4392.8

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

(FLANGE)

DRAIN

94

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE

©

is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

SABER

®

is a registered trademark of MicroSim Corporation.

HUF76121P3, HUF76121S3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TC = 25oC, VGS = 10V) (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC = 100oC, VGS = 5V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

47
25
24

Figure 4

Figures 6, 17,18

75

0.6

-40 to 150

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

DSSID

DSS

GSS

θJC

θJA

ON

r

f

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA
VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 47A, VGS = 10V (Figures 9, 10) - 0.015 0.021 Ω
ID = 25A, VGS = 5V (Figure 9) - 0.019 0.028 Ω
ID = 24A, VGS = 4.5V (Figure 9) - 0.021 0.031 Ω

(Figure 3) - - 1.66
TO-220 and TO-263 - - 62

VDD = 15V, ID≅ 24A, RL = 0.63Ω,

- - 265 ns

o

o

C/W
C/W

VGS= 4.5V, RGS = 10.0Ω
(Figures 15, 21, 22)

-15-ns

- 160 - ns

-14-ns

-31-ns

- - 70 ns

95

HUF76121P3, HUF76121S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

ON

VDD = 15V, ID≅ 47A, RL = 0.32Ω,
VGS= 10V, RGS = 12.5Ω

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 13 16 nC
VGS = 0V to 1V - 1.0 1.2 nC

gs

gd

= 0V to 10V VDD = 15V, ID≅ 25A,

RL = 0.6Ω
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- - 80 ns

-6-ns

-47-ns

-47-ns

-42-ns

- - 135 ns

-2430nC

- 2.50 - nC

- 7.80 - nC

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ISS

OSS

RSS

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

SD

rr

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

125

VDS = 25V, VGS = 0V, f = 1MHz

- 850 - pF

(Figure 13)

- 465 - pF

- 100 - pF

ISD = 25A - - 1.25 V
ISD = 25A, dISD/dt = 100A/µs--65ns
ISD = 25A, dISD/dt = 100A/µs - - 100 nC

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25

50 75 100 125 150

VGS = 4.5V

TC, CASE TEMPERATURE (oC)

VGS = 10V

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

96