Intersil Corporation HUF76121D3, HUF76121D3S Datasheet

HUF76121D3, HUF76121D3S

Data Sheet October 1999 File Number 4391.5

20A, 30V, 0.023 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs

These N-Channel powerMOSFETs
are manufactured using the
innovative UltraFET™ process.

This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA76121.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76121D3 TO-251AA 76121D
HUF76121D3S TO-252AA 76121D

NOTE: Whenordering,usetheentirepart number.Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76121D3ST.

Features

• Logic Level Gate Drive

• 20A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

• Temperature Compensating SABER

DS(ON)

= 0.023Ω

®

Model

©

Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

(FLANGE)

DRAIN

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

SABER© is a Copyright of Analogy Inc. 1-888-INTERSIL or 407-727-9207

| Copyright © Intersil Corporation 1999.

HUF76121D3, HUF76121D3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TC = 25oC, VGS = 10V) (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

20
20
20

Figure 4

Figures 6, 17, 18

75

0.6

-55 to 150

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

DSSID

DSS

VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA

GSS

GS(TH)VGS

DS(ON)ID

VGS = ±16V - - ±100 nA

ID = 20A, VGS = 5V (Figure 9) - 0.021 0.030 Ω
ID = 20A, VGS = 4.5V (Figure 9) - 0.023 0.033 Ω

θJC
θJA

ON

(Figure 3) - - 1.66
TO-251AA, TO-252AA - - 100

VDD = 15V, ID≅ 20A,
RL = 0.75Ω, VGS= 4.5V,

d(ON)

d(OFF)

OFF

RGS = 11.0Ω
(Figures 15, 21, 22)

r

f

= 250µA, VGS = 0V (Figure 12) 30 - - V

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 20A, VGS = 10V (Figure 9, 10) - 0.017 0.023 Ω

o

C/W

o

C/W

- - 275 ns

-18-ns

- 165 - ns

-18-ns

-40-ns

- - 87 ns

2

HUF76121D3, HUF76121D3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ON

VDD = 15V, ID≅ 20A,
RL = 0.75Ω, VGS = 10V,

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS

RGS = 12.0Ω
(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 13 16 nC
VGS = 0V to 1V - 1.0 1.2 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS
RSS

(Figure 13)

= 0V to 10V VDD = 15V,

ID≅ 20A,
RL = 0.75Ω
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- - 85 ns

-6-ns

-50-ns

-45-ns

-45-ns

- - 135 ns

-2430nC

- 2.40 - nC

- 7.40 - nC

- 850 - pF

- 465 - pF

- 100 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125 175

SD

rr

RR

ISD = 20A - - 1.25 V
ISD = 20A, dISD/dt = 100A/µs--58ns
ISD = 20A, dISD/dt = 100A/µs--70nC

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

VGS = 10V

VGS = 4.5V

FIGURE 1. NORMALIZED POWER DISSIPATIONvs CASE

TEMPERATURE

3

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE