Intersil Corporation HUF76113T3ST Datasheet

TM

HUF76113T3ST

Data Sheet June 2000

4.7A, 30V, 0.031 Ohm, N-Channel, Logic
Level UltraFET Power MOSFET

This N-Channel power MOSFET is

®

manufactured using the innov ative
UltraFET process. This advanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where po w er
efficiency is important, such as switching regulators, switching
converters, motor drivers, rela y driv ers , low-voltage bus
switches, and power management in portable and battery­operated products.

Formerly developmental type TA76113.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76113T3ST SOT-223 76113

NOTE: HUF76113T3ST is available only in tape and reel.

File Number 4388.3

Features

• Logic Level Gate Drive

• 4.7A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

DS(ON)

= 0.031Ω

®

Model

• Temperature Compensating SABER™ Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

Packaging

DRAIN

(FLANGE)

S

SOT-223

SOURCE

DRAIN

GATE

1

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation. SABER™ is a trademark of Analogy, Inc.

UltraFET® is a registered trademark of Intersil Corporation.

HUF76113T3ST

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

HUF76113T3ST UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TA= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

4.7

2.7

2.6

Figure 4

Figure 6

1.1

0.0091

-55 to 150

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

DSSID

DSS

= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA

Gate to Source Leakage Current I

GSS

VGS = ±16V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 4.7A, VGS = 10V (Figure 9, 10) - 0.027 0.031 W
ID = 2.7A, VGS = 5V (Figure 9) - 0.033 0.038 W
ID = 2.6A, VGS = 4.5V (Figure 9) - 0.035 0.040 W

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambient R

θJA

Pad Area = 0.173 in2 (Note 2) - - 110
Pad Area = 0.068 in2 (See TB377) - - 133
Pad Area = 0.026 in2 (See TB377) - - 157

o
o
o

C/W
C/W

C/W
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

ON

OFF

VDD = 15V, ID≅ 2.6A,
RL = 5.8Ω, VGS= 4.5V,
RGS = 18Ω
(Figure 15)

r

f

- - 90 ns

-12-ns

-46-ns

-31-ns

-31-ns

- - 95 ns

2

HUF76113T3ST

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

NOTES:

2. Rated with R

=110oC/W measured using FR-4 board with 0.173 in2 copper at 1000 seconds.

θJA

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

ON

VDD = 15V, ID≅ 4.7A,
RL = 3.2Ω, VGS= 10V,

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS

RGS = 9.1Ω
(Figure 16)

r

f

VGS = 0V to 5V - 9.5 11.5 nC
VGS = 0V to 1V - 0.73 0.90 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS
RSS

SD

(Figure 13)

ISD = 4.7A - - 1.25 V
ISD = 2.7A - - 1.00 V
ISD = 2.7A, dISD/dt = 100A/µs--44ns

rr

RR

ISD = 2.7A, dISD/dt = 100A/µs--46nC

= 0V to 10V VDD=15V,ID≅2.7A,

RL = 5.5Ω
I

= 1.0mA

g(REF)

(Figure 14)

- - 40 ns

-4-ns

-21-ns

-31-ns

-25-ns

- - 85 ns

- 17.0 20.5 nC

- 1.50 - nC

- 4.30 - nC

- 625 - pF

- 310 - pF

-60-pF

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs AMBIENT

TEMPERATURE

3

125

5

VGS= 10V, R

4

3

VGS= 4.5V, R

2

, DRAIN CURRENT (A)

D

I

1

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

= 110oC/W

θJA

= 110oC/W

θJA

FIGURE 2. MAXIMUM CONTINUOUS DRAINCURRENTvs

AMBIENT TEMPERATURE

Typical Performance Curves (Continued)

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

JA

θ

0.01

Z

THERMAL IMPEDANCE

0.001

-5

10

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

SINGLE PULSE

-3

10

HUF76113T3ST

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

0

R

= 110oC/W

JA

θ

P

DM

t

1

t

2

1/t2

x R

JA

θ

1

10

+ T

JA

A

θ

2

10

3

10

500

100

10

VGS = 10V

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

1

-5

10

200

100

-4

10

VGS = 5V

-3

10

TJ = MAX RATED
TA = 25oC

R

θ

-2

10

-1

10

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

40

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

100µs

10

= 110oC/W

JA

0

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

- VDD)

DSS

150 - T

125

2

10

- VDD) +1]

I = I

25

1

10

DSS

STARTING TJ = 25oC

A

3

10

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

DS(ON)

V

DSS(MAX)

= 30V

1ms

10ms

1 10 100

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

4

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY