Intersil Corporation HUF76113DK8 Datasheet

TM

HUF76113DK8

Data Sheet June 2000 File Number 4387.5

6A, 30V, 0.032 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET

This N-Channel power MOSFET is

®

manufactured using the innov ative
UltraFET process. This advanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where po w er
efficiency is important, such as switching regulators, switching
converters, motor drivers, rela y driv ers , low-voltage bus
switches, and power management in portable and battery­operated products.

Formerly developmental type TA76113.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76113DK8 MS-012AA 76113DK8

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76113DK8T.

Features

• Logic Level Gate Drive

• 6A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

• Temperature Compensating SABER

DS(ON)

= 0.032Ω

®

Model

™

Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D1(8)
D1(7)

S1(1)

G1(2)

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

D2(6)
D2(5)

S2(3)

G2(4)

5

3

4

1

UltraFET® is a registered trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

SABER™ is a trademark of Analogy, Inc. | 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

HUF76113DK8

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

HUF76113DK8 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TA= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 5V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

6

1.8

1.7

Figure 4

Figure 6

2.5

0.02

-55 to 150

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

NOTES:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board at 1 second.

3. 228oC/W measured using FR-4 board with 0.006 in2 footprint at 1000 seconds.

Electrical Specifications T

=25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

DSSID

DSS

GSS

θJA

ON

r

f

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA
VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 6A, VGS = 10V (Figures 9, 10) - 0.026 0.032 Ω
ID = 1.8A, VGS = 5V (Figure 9) - 0.033 0.041 Ω
ID = 1.7A, VGS = 4.5V (Figure 9) - 0.035 0.043 Ω

Pad Area = 0.76 in2 (Note 2) - - 50
Pad Area = 0.027 in2 (See TB377) - - 191
Pad Area = 0.006 in2 (See TB377) - - 228

VDD = 15V, ID≅ 1.7A, RL = 8.8Ω,
VGS= 4.5V, RGS = 18Ω,
(Figure 15)

- - 110 ns

-17-ns

o
o
o

C/W
C/W
C/W

-57-ns

-32-ns

-38-ns

- - 105 ns

2

HUF76113DK8

Electrical Specifications T

=25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ON

VDD= 15V, ID≅ 6A, RL= 2.5Ω,VGS=10V,
RGS = 18Ω

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS

(Figure 16)

r

f

VGS = 0V to 5V - 8.4 10.2 nC
VGS = 0V to 1V - 0.55 0.66 nC

gs
gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS
RSS

(Figure 13)

= 0V to 10V VDD = 15V, ID≅ 1.8A,

RL = 8.3Ω
I

= 1.0mA

g(REF)

(Figure 14)

- - 60 ns

- 6.5 - ns

-33-ns

-50-ns

-40-ns

- - 135 ns

- 16.0 19.2 nC

- 1.50 - nC

- 3.90 - nC

- 605 - pF

- 275 - pF

-40-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

SD

rr

RR

ISD = 6A - - 1.25 V
ISD = 1.8A 1.00 V
ISD = 1.8A, dISD/dt = 100A/µs--40ns
ISD = 1.8A, dISD/dt = 100A/µs--42nC

7

125

6

5

4

3

2

, DRAIN CURRENT (A)

D

I

VGS= 4.5V, R

1

0

25 50 75 100 125 150

= 228oC/W

JA

θ

TA, AMBIENT TEMPERATURE (oC)

VGS= 10V, R

JA

θ

= 50oC/W

FIGURE 1. NORMALIZED POWERDISSIPATION vs AMBIENT

TEMPERATURE

3

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

Typical Performance Curves (Continued)

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

HUF76113DK8

R

= 228oC/W

JA

θ

P

DM

, NORMALIZED

JA

θ

0.01

Z

THERMAL IMPEDANCE

0.001

-5

10

500

100

VGS = 10V

10

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

1

-5

10

SINGLE PULSE

-4

10

-3

10

-2

10

-1

10

0

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

= 228oC/W

JA

θ

VGS = 5V

-4

10

-3

10

-2

10

-1

10

0

10

t, PULSE WIDTH (s)

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

1

10

TC = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

25

1

10

t

1

t

2

1/t2

x R

JA

θ

o

+ T

JA

θ

2

10

C DERATE PEAK

150 - T

A

125

2

10

A

3

10

3

10

FIGURE 4. PEAK CURRENT CAPABILITY

500

100

OPERATION IN THIS

10

AREA MAY BE
LIMITED BY r

, DRAIN CURRENT (A)

D

I

1

V

DS

DS(ON)

V

DSS(MAX)

10 1001

, DRAIN TO SOURCE VOLTAGE (V)

TJ = MAX RATED

T

A

= 30V

= 25oC

100µs

1ms

10ms

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

4

50

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV

DSS

- VDD)

- VDD) +1]

DSS

STARTING TJ = 25oC

10

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

AS

I

1

0.1

1 10 100

tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY