Intersil Corporation HUF76112SK8 Datasheet

TM

HUF76112SK8

Data Sheet April 2000

7.5A, 30V, 0.026 Ohm, N-Channel, Logic
Level Power MOSFET

The HUF76112SK8 is an Application-Specific MOSFET
optimized for switching when used as the upper switch in
synchronous buckapplications.Thelowgatechargeandlow
input capacitance results in lower driver and lower switching
losses, thereby increasing the overall system efficiency.

Symbol

SOURCE (1)
SOURCE (2)
SOURCE (3)

GATE (4)

DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)

Packaging

SO8 (JEDEC MS-012AA)

BRANDING DASH

File Number 4834.1

Features

• 7.5A, 30V

-r

-r

= 0.026Ω, VGS= 10V

DS(ON)

= 0.033Ω, VGS= 5V

DS(ON)

• PWM Optimized for Synchronous Buck Applications

• Fast Switching

• Low Gate Charge

-Q

Total 15nC (Typ)

g

• Low Capacitance

-C

725pF (Typ)

ISS

-C

36pF (Typ)

RSS

Ordering Information

5

1

2

3

4

Absolute Maximum Ratings T

SYMBOL PARAMETER HUF76112SK8 UNITS

V

DSS

V

DGR

V

GS

I

D

I

D

I

DM

P

D

TJ, T

STG

T

L

T

pkg

THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient

R

θJA

NOTES:

1. TJ = 25oC to 125oC.

2. R

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 50oC/W

θJA

Drain to Source Voltage (Note 1) 30 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) 30 V
Gate to Source Voltage ±16 V
Drain Current

Continuous (TA = 25oC, VGS = 10V) (Figure 2) (Note 2)
Continuous (TA = 100oC, VGS = 5V) (Note 2)

Pulsed Drain Current

Power Dissipation (Note 2)

Derate Above 25oC
Operating and Storage Temperature -55 to 150
Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

Measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10
second.

Measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000
seconds. (Figure 23)

Measured using FR-4 boardwith0.0115in2(7.42 mm2) copper pad at1000
seconds. (Figure 23)

= 25oC, Unless Otherwise Specified

A

PART NUMBER PACKAGE BRAND

HUF76112SK8 MS-012AA 76112SK8

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the HUF76112SK8 in tape and reel, e.g., HUF76112SK8T.

7.5

4.0

Figure 4

2.5
20

300
260

50

152

189

A
A
A

W

mW/oC

o

C

o

C

o

C

o

C/W

o

C/W

o

C/W

1

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET® is a registered trademark of Intersil Corporation.

HUF76112SK8

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

SWITCHING SPECIFICATIONS (VGS = 5V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge at 10V Q
Total Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TA = 150oC - - 250 µA

GSS

GS(TH)VGS

DS(ON)ID

VGS = ±16V - - ±100 nA

ID = 4.0A, VGS = 5V (Figure 9) - 0.027 0.033 Ω

ON

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS
g(TOT)VGS

g(TH)

ISS
OSS
RSS

VDD = 15V, ID = 4.0A
VGS= 5V,
RGS = 20Ω
(Figures 15, 21, 22)

r

f

VDD = 15V, ID = 7.5A
VGS= 10V,
RGS = 20Ω
(Figures 16, 21, 22)

r

f

VGS = 0V to 1V - 0.74 0.9 nC

gs
gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figures 13)

= 250µA, VGS = 0V (Figure 12) 30 - - V

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 7.5A, VGS = 10V (Figures 9, 10) - 0.022 0.026 Ω

- - 77 ns

-11-ns

-40-ns

-35-ns

-32-ns

- - 100 ns

- - 75 ns

- 7.2 - ns

-43-ns

-52-ns

-45-ns

- - 145 ns

= 0V to 10V VDD = 15V,
= 0V to 5V - 7.2 8.7 nC

ID = 7.5A,
I

= 1.0mA

g(REF)

-1518nC

(Figures 14, 19, 20)

- 2.1 - nC

- 2.9 - nC

- 725 - pF

- 325 - pF

-36-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD

RR

ISD = 7.5A - - 1.25 V
ISD = 4A - - 1.00 V

rr

ISD = 7.5A, dISD/dt = 100A/µs--25ns
ISD = 7.5A, dISD/dt = 100A/µs--14nC

Typical Performance Curves

HUF76112SK8

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATIONvsAMBIENT

TEMPERATURE

3

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

Z

0.01

THERMAL IMPEDANCE

0.001

-5

10

-4

10

SINGLE PULSE

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

8

6

VGS= 10V, R

θJA

= 50oC/W

4

, DRAIN CURRENT (A)

2

0

25

VGS= 5V, R

D

I

= 189oC/W

θJA

50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs

AMBIENT TEMPERATURE

R

θJA

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

θJA

1/t2

x R

10

θJA

2

+ T

= 50oC/W

t

2

A

3

10

1000

100

10

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE

VGS = 10V

MAY LIMIT CURRENT
IN THIS REGION

1

-5

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

θJA

= 50oC/W

TA = 25oC

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 5V

-4

10

-3

10

-2

10

-1

10

0

10

I = I

1

10

150 - T

25

A

125

2

10

3

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

Typical Performance Curves (Continued)

500

100

R

= 50oC/W

θJA

SINGLE PULSE
TJ = MAX RATED

= 25oC

T

A

100µs

HUF76112SK8

200

100

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

DSS

- VDD)

DSS

- VDD) +1]

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1

V

DS

DS(ON)

10 100

, DRAIN TO SOURCE VOLTAGE (V)

1ms

10ms

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

25

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

20

15

10

DRAIN CURRENT (A)

D,

I

5

0

1.5 2.5 3.0 3.5

TJ = 150oC

2.0
VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = -55oC

FIGURE 7. TRANSFER CHARACTERISTICS

4.0

10

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 100
tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

10

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVESWITCHING

CAPABILITY

25

VGS =

10V

20

VGS = 4.5V

15

10

, DRAIN CURRENT (A)

D

I

5

0

0 0.5 1.0 2.0

TA = 25oC

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4V
VGS = 3.5V

VGS = 5V

VGS = 3V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

FIGURE 8. SATURATION CHARACTERISTICS

50

40

30

, DRAIN TO SOURCE

20

ON RESISTANCE (mΩ)

DS(ON)

r

10

246810

ID = 1A

ID = 7.5A

, GATE TO SOURCE VOLTAGE (V)

V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

4

1.6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.3

1.0

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

0.7

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 7.5A

FIGURE 10. NORMALIZED DRAIN TOSOURCEON

RESISTANCE vs JUNCTION TEMPERATURE