Intersil Corporation HUF76107P3 Datasheet

HUF76107P3

Data Sheet October 1999 File Number 4382.5

20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs

These N-Channel power
MOSFETs are manufacturedusing
the innovativeUltraFET™ process.

This advanced process technology
achievesthe lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low-voltage bus switches, and power management
in portable and battery-operated products.

Formerly developmental type TA76107.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76107P3 TO-220AB 76107P

Features

• Logic Level Gate Drive

• 20A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

• Temperature Compensating SABER

DS(ON)

= 0.052Ω

®

Model

©

Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

S

70

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

©

SABER

is a Copyright of Analogy Inc. 1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999.

HUF76107P3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

20

10.5
10

Figure 4

Figures 6, 17, 18

35

0.30

-40 to 150

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

DSSID

DSS

GSS

θJC

θJA

ON

r

f

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA
VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 20A, VGS = 10V (Figure 9, 10) - 0.042 0.052 Ω
ID = 10.5A, VGS = 5V (Figure 9) - 0.058 0.080 Ω
ID = 10A, VGS = 4.5V (Figure 9) - 0.065 0.085 Ω

(Figure 3) - - 3.3
TO-220 62

VDD = 15V, ID≅ 10A, RL = 1.50Ω,

- - 120 ns

o

o

C/W
C/W

VGS= 4.5V, RGS = 33Ω
(Figures 15, 21, 22)

-14-ns

-66-ns

-16-ns

-22-ns

- - 57 ns

71

HUF76107P3

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

ON

VDD = 15V, ID≅ 20A, RL =0.75Ω,
VGS= 10V, RGS = 33Ω

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

(Figures 16, 21, 22)

r

f

VGS = 0V to 5V - 4.7 5.7 nC
VGS = 0V to 1V - 0.35 0.42 nC

gs

gd

= 0V to 10V VDD = 15V,I

10.5A,
RL = 1.43Ω
I

= 1.0mA

g(REF)

(Figures 14, 19, 20)

- - 75 ns

-18-ns

-30-ns

-62-ns

-20-ns

- - 125 ns

≅

D

- 8.6 10.3 nC

- 1.00 - nC

- 2.40 - nC

Input Capacitance C

ISS

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 13)

Output Capacitance C
Reverse Transfer Capacitance C

OSS

RSS

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

SD

RR

ISD = 10.5A - - 1.25 V
ISD = 10.5A, dISD/dt = 100A/µs--39ns

rr

ISD = 10.5A, dISD/dt = 100A/µs--49nC

Typical Performance Curves Unless otherwise specified

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

125

- 315 - pF

- 170 - pF

-30-pF

25

20

15

VGS=4.5V

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125

VGS=10V

TC, CASE TEMPERATURE (oC)

150

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

72

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE