Intersil Corporation HUF76107D3, HUF76107D3S Datasheet

HUF76107D3, HUF76107D3S

Data Sheet July 1999 File Number 4701.1

20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs

These N-Channel power
MOSFETs are manufacturedusing
the innovativeUltraFET™ process.

This advanced process technology
achievesthelowestpossible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low-voltage bus switches, and power management
in portable and battery-operated products.

Formerly developmental type TA76107.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76107D3 TO-251AA 76107D
HUF76107D3S TO-252AA 76107D

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.

Features

• Logic Level Gate Drive

• 20A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

• Temperature Compensating SABER

DS(ON)

= 0.052Ω

®

Model

©

Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

(FLANGE)

JEDEC TO-251AA JEDEC TO-252AA

DRAIN

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

58

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE

©

is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

SABER

®

is a registered trademark of MicroSim Corporation.

HUF76107D3, HUF76107D3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TC= 100oC, VGS = 5V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TC= 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

20

10.5
10

Figure 4

Figure 6

35

0.30

-55 to 150

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

DSSID

DSS

GSS

θJC

θJA

ON

r

f

OFF

= 250µA, VGS = 0V (Figure 12) 30 - - V
VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA
VGS = ±16V - - ±100 nA

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 20A, VGS = 10V (Figure 9, 10) - 0.042 0.052 Ω
ID = 10.5A, VGS = 5V (Figure 9) - 0.058 0.080 Ω
ID = 10A, VGS = 4.5V (Figure 9) - 0.065 0.085 Ω

(Figure 3) - - 3.3
TO-251, TO-252 - - 100

VDD = 15V, ID≅ 10A, RL = 1.50Ω,

- - 120 ns

o

o

C/W
C/W

VGS= 4.5V, RGS = 33Ω
(Figure 15)

-14-ns

-66-ns

-16-ns

-22-ns

- - 57 ns

59

HUF76107D3, HUF76107D3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

ON

VDD = 15V, ID≅ 20A, RL =0.75Ω,
VGS= 10V, RGS = 33Ω

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

(Figures 16)

r

f

VGS = 0V to 5V - 4.7 5.7 nC
VGS = 0V to 1V - 0.35 0.42 nC

gs

gd

= 0V to 10V VDD = 15V,ID≅ 10.5A,

RL = 1.43Ω
I

= 1.0mA

g(REF)

(Figure 14)

- - 75 ns

-18-ns

-30-ns

-62-ns

-20-ns

- - 125 ns

- 8.6 10.3 nC

- 1.00 - nC

- 2.40 - nC

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ISS

OSS

RSS

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

SD

rr

RR

Unless otherwise specified

125

VDS = 25V, VGS = 0V, f = 1MHz

- 315 - pF

(Figure 13)

- 170 - pF

-30-pF

ISD = 10.5A - - 1.25 V
ISD = 10.5A, dISD/dt = 100A/µs--39ns
ISD = 10.5A, dISD/dt = 100A/µs--49nC

25

20

15

VGS= 4.5V

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125

VGS= 10V

150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

60