Intersil Corporation HUF76105DK8 Datasheet

TM

HUF76105DK8

Data Sheet June 2000 File Number 4380.6

5A, 30V, 0.050 Ohm, Dual N-Channel,
Logic Level UltraFET Power MOSFET

This N-Channel power MOSFET is

®

manufactured using the innov ative
UltraFET™ process. This advanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where po w er
efficiency is important, such as switching regulators, switching
converters, motor drivers, rela y driv ers , low-voltage bus
switches, and power management in portable and battery
operated products.

Formerly developmental type TA76105.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76105DK8 MS-012AA 76105DK8

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF76105DK8T.

Features

• Logic Level Gate Drive

• 5A, 30V

• Ultra Low On-Resistance, r

• Temperature Compensating PSPICE

• Temperature Compensating SABER

DS(ON)

= 0.050Ω

®

Model

©

Model

• Thermal Impedance SPICE Model

• Thermal Impedance SABER Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D1(8)
D1(7)

S1(1)

G1(2)

Packaging

BRANDING DASH

JEDEC MS-012AA

1

2

3

4

D2(6)
D2(5)

S2(3)

G2(4)

5

1

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation. SABER™ is a trademark of Analogy, Inc.

UltraFET® is a registered trademark of Intersil Corporation.

HUF76105DK8

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

HUF76105DK8 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±16 V

Drain Current

Continuous (TA= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D
D
D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

5

1.4

1.3

Figure 4

Figures 6, 17, 18

2.5

0.02

-55 to 150

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board at 1 second.

3. 228oC/W measured using FR-4 board with 0.006 in2 of copper at 1000 seconds.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambient R

SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

DSSID

DSS

VDS = 25V, VGS = 0V - - 1 µA
VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA

GSS

GS(TH)VGS

DS(ON)ID

VGS = ±16V - - ±100 nA

ID = 1.4A, VGS = 5V (Figure 9) - 0.055 0.072 Ω
ID = 1.3A, VGS = 4.5V (Figure 9) - 0.060 0.078 Ω

θJA

Pad Area = 0.76 in2 (Note 2) - - 50
Pad Area = 0.027 in2 (See TB377) - - 191
Pad Area = 0.006 in2 (See TB377) - - 228

ON

VDD = 15V, ID≅ 1.3A,
RL = 11.5Ω, VGS= 4.5V,

d(ON)

d(OFF)

OFF

r

f

RGS = 27Ω
(Figure 15)

= 250µA, VGS = 0V (Figure 12) 30 - - V

= VDS, ID = 250µA (Figure 11) 1 - 3 V

= 5A, VGS = 10V (Figures 9, 10) - 0.040 0.050 Ω

o

C/W

o

C/W

o

C/W

- - 60 ns

-12-ns

-28-ns

-31-ns

-21-ns

- - 80 ns

2

HUF76105DK8

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ON

VDD = 15V, ID≅ 5A,
RL = 3Ω, VGS= 10V,

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(5)

g(TH)

ISS

RGS = 27Ω
(Figure 16)

r

f

VGS = 0V to 5V - 5.3 6.4 nC
VGS = 0V to 1V - 0.35 0.45 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS
RSS

(Figure 13)

= 0V to 10V VDD = 15V, ID≅ 1.4A,

RL = 10.7Ω
I

= 1.0mA

g(REF)

(Figure 14)

- - 60 ns

-17-ns

-21-ns

-60-ns

-20-ns

- - 120 ns

- 9 11 nC

- 1.00 - nC

- 2.40 - nC

- 325 - pF

- 180 - pF

-35-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

SD

rr

RR

ISD = 5A - - 1.25 V
ISD = 1.4A 1.00 V
ISD = 1.4A, dISD/dt = 100A/µs--39ns
ISD = 1.4A, dISD/dt = 100A/µs--42nC

6

125

5

4

3

2

, DRAIN CURRENT (A)

D

I

VGS= 4.5V, R

1

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

= 228oC/W

JA

θ

VGS= 10V, R

JA

θ

= 50oC/W

FIGURE 1. NORMALIZED POWER DISSIPATIONvs AMBIENT

TEMPERATURE

3

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs

AMBIENT TEMPERATURE

Typical Performance Curves (Continued)

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

HUF76105DK8

R

= 228oC/W

JA

θ

P

DM

, NORMALIZED

JA

θ

0.01

Z

THERMAL IMPEDANCE

0.001

-5

10

500

100

10

, PEAK CURRENT (A)

DM

I

1

10

VGS = 10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

SINGLE PULSE

-4

10

-3

10

-2

10

-1

10

0

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

= 228oC/W

JA

θ

VGS = 5V

-4

10

-3

10

-2

10

-1

10

0

10

t, PULSE WIDTH (s)

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

1

10

TA = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

25

1

10

t

1

t

2

1/t2

x R

JA

θ

o

+ T

JA

θ

2

10

C DERATE PEAK

150 - T

A

125

2

10

A

3

10

3

10

FIGURE 4. PEAK CURRENT CAPABILITY

200
100

10

1

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE

0.1

LIMITED BY r

DS(ON)

V

DSS(MAX)

1 10 100

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

TJ = MAX RATED

= 25oC

T

A

100µs

1ms

10ms

= 30V

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

4

20

STARTING TJ = 25oC

10

STARTING TJ = 150oC

If R = 0

, AVALANCHE CURRENT (A)

tAV = (L)(IAS)/(1.3*RATED BV

AS

I

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

1

DSS

- VDD)

DSS

- VDD) +1]

0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVESWITCHING

CAPABILITY