Intersil Corporation HUF76013D3S, HUF76013P3 Datasheet

TM

HUF76013P3, HUF76013D3S

Data Sheet April 2000

20A, 20V, 0.022 Ohm, N-Channel, Logic
Level Power MOSFETs

The HUF76013 is an application-specific MOSFET
optimized for switching when used as the upper switch in
synchronous buckapplications.Thelowgatechargeandlow
input capacitance results in lower driver and lower switching
losses thereby increasing the overall system efficiency.

Symbol

D

G

S

Packaging

HUF76013D3S

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

HUF76013P3

JEDEC TO-220AB

SOURCE

DRAIN

(FLANGE)

DRAIN

GATE

File Number 4849

Features

• 20A, 20V

-r

-r

= 0.022Ω, VGS= 10V

DS(ON)

= 0.030Ω, VGS= 5V

DS(ON)

• PWM Optimized for Synchronous Buck Applications

• Fast Switching

• Low Gate Charge

-Q

Total 14nC (Typ)

g

• Low Capacitance

-C

624pF (Typ)

ISS

-C

71pF (Typ)

RSS

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76013P3 TO-220AB 76013P
HUF76013D3S TO-252AA 76013D

NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the HUF76013D3S in tape and reel, e.g., HUF76013D3ST.

Absolute Maximum Ratings T

SYMBOL PARAMETER

V

DSS

V

DGR

V

GS

I

D

I

D

I

DM

P

D

TJ, T

STG

T

L

T

pkg

THERMAL SPECIFICATIONS

R

θJC

R

θJA

NOTE:

1. TJ = 25oC to 125oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Drain to Source Voltage (Note 1) 20 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) 20 V
Gate to Source Voltage ±16 V
Drain Current

Continuous (TC = 25oC, VGS = 10V) (Figure 2)
Continuous (TC = 100oC, VGS = 5V)
Pulsed Drain Current

Power Dissipation

Derate Above 25oC
Operating and Storage Temperature -55 to 150
Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

Thermal Resistance Junction to Case, TO-220, TO-252 2.5
Thermal Resistance Junction to Ambient TO-220 62
Thermal Resistance Junction to Ambient TO-252 100

= 25oC, Unless Otherwise Specified

C

HUF76013P3,

HUF76013D3S UNITS

20
20

Figure 4

50

0.4

300
260

A
A
A

W

W/oC

o

C

o

C

o

C

o

C/W

o

C/W

o

C/W

1

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET® is a registered trademark of Intersil Corporation.

HUF76013P3, HUF76013D3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source ON Resistance r

SWITCHING SPECIFICATIONS (V

GS

= 5V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge at 10V Q
Total Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

VDS = 20V, VGS = 0V - - 1 µA
V

GSS

GS(TH)VGS

DS(ON)ID

ON

d(ON)

d(OFF)

OFF

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS
g(TOT)VGS

g(TH)

ISS
OSS
RSS

VGS = ±16V - - ±100 nA

I

D

VDD = 10V, ID = 20A
VGS= 5V, RGS = 19Ω
(Figures 14, 18, 19)

r

f

VDD = 10V, ID = 20A
VGS= 10V,
RGS = 19Ω

r

(Figures 15, 18, 19)

f

VGS = 0V to 1V - 0.9 1 nC

gs
gd

VDS = 20V, VGS = 0V,
f = 1MHz
(Figure 12)

= 250µA, VGS = 0V (Figure 11) 20 - - V

= 20V, VGS = 0V, TC = 150oC - - 250 µA

DS

= VDS, ID = 250µA (Figure 10) 1 - 3 V
= 20A, VGS = 10V (Figures 8, 9) - 0.018 0.022 W
= 20A, VGS = 5V (Figure 8) - 0.025 0.030 W

- - 197 ns

-11-ns

- 120 - ns

-19-ns

-30-ns

- - 72 ns

- - 151 ns

-7-ns

-93-ns

-37-ns

-29-ns

- - 100 ns

= 0V to 10V VDD = 10V,

= 0V to 5V - 7.8 9 nC

ID = 20A,
I

g(REF)

= 1.0mA

- 14.4 17 nC

(Figures 13, 16, 17)

- 3.5 - nC

- 3.2 - nC

- 624 - pF

- 444 - pF

-71-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD

RR

ISD = 20A - - 1.25 V
I

= 10A - - 1.0 V

SD

rr

ISD = 20A, dISD/dt = 100A/µs--55ns
ISD = 20A, dISD/dt = 100A/µs--82nC

Typical Performance Curves

HUF76013P3, HUF76013D3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

25

20

15

VGS= 5.0V

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

x R

0

θJC

VGS= 10V

t

1

t

2

+ T

C

1

10

1000

100

VGS = 10V

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

VGS = 5V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

TC = 25oC

FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

150 - T

I = I

25

10

C

125

0

1

10

HUF76013P3, HUF76013D3S

Typical Performance Curves (Continued)

300

100

100µs

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

, DRAIN CURRENT (A)

D

I

SINGLE PULSE
TJ = MAX RATED

1

11050

DS(ON)

= 25oC

T

C

VDS, DRAIN TO SOURCE VOLTAGE (V)

1ms

10ms

40

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

30

20

, DRAIN CURRENT (A)

10

D

I

TJ = 25oC

0

234

TJ = 150oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. TRANSFER CHARACTERISTICS

40

VGS = 10V

30

20

VGS = 5V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

TC = 25oC

VGS = 4V

50

ID = 20A

40

= 5A

I

D

30

I

D

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

T

= 25oC

C

= 10A

5

VGS = 3.5V

, DRAIN CURRENT (A)

10

D

I

VGS = 3V

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

, DRAIN TO SOURCE

20

ON RESISTANCE (mΩ)

DS(ON)

r

10

246810

, GATE TO SOURCE VOLTAGE (V)

V

GS

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 20A

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

FIGURE 9. NORMALIZED DRAIN TOSOURCEON

RESISTANCE vs JUNCTION TEMPERATURE

4

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE