intersil HUF75842S3S DATA SHEET

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HUF75842P3, HUF75842S3S
Data Sheet December 1999
43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
GATE
GATE
DRAIN
(FLANGE)
HUF75842P3
SOURCE
HUF75842S3S
Symbol
D
G
S
DRAIN
(FLANGE)
File Number 4815
Features
• Ultra Low On-Resistance
-r
= 0.042Ω, VGS= 10V
DS(ON)
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER PACKAGE BRAND
HUF75842P3 TO-220AB 75842P HUF75842S3S TO-263AB 75842S
NOTE: Whenordering,usethe entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF75842S3ST.
Absolute Maximum Ratings T
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
= 25oC, Unless Otherwise Specified
C
DSS
DGR
GS
DM
STG
pkg
HUF75842P3 UNITS
150 V 150 V ±20 V
D D
D
L
43 30
Figure 4
230
1.53
-55 to 175
300 260
A A
W
W/oC
o
C
o
C
o
C
4-1
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
SABER™ is a trademark of Analogy, Inc. 1-888-INTERSIL or 321-724-7143
| Copyright © Intersil Corporation 1999.
HUF75842P3, HUF75842S3SS
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R Thermal Resistance Junction to
Ambient SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time t Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Turn-Off Time t
GATE CHARGE SPECIFICATIONS
DSSID
DSS
VDS = 140V, VGS = 0V - - 1 µA VDS = 135V, VGS = 0V, TC = 150oC - - 250 µA
GSS
GS(TH)VGS
DS(ON)ID
θJC
R
θJA
ON
VGS = ±20V - - ±100 nA
TO-220 - - 0.65oC/W
VDD = 75V, ID = 43A VGS= 10V,
d(ON)
RGS = 3.9 (Figures 18, 19)
r
d(OFF)
f
OFF
= 250µA, VGS = 0V (Figure 11) 150 - - V
= VDS, ID = 250µA (Figure 10) 2 - 4 V
= 43A, VGS = 10V (Figure 9) - 0.035 0.042
--62oC/W
- - 100 ns
-13-ns
-53-ns
-47-ns
-34-ns
- - 120 ns
Total Gate Charge Q Gate Charge at 10V Q Threshold Gate Charge Q
g(TOT)VGS
g(10)
g(TH)
Gate to Source Gate Charge Q Gate to Drain "Miller" Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C
ISS
OSS
RSS
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t Reverse Recovered Charge Q
SD
RR
= 0V to 20V VDD = 75V,
- 144 175 nC
ID = 43A,
VGS = 0V to 10V - 77 90 nC VGS = 0V to 2V - 5.6 6.7 nC
gs
gd
VDS = 25V, VGS = 0V,
I
= 1.0mA
g(REF)
(Figures 13, 16, 17)
-12-nC
-30-nC
- 2730 - pF f = 1MHz (Figure 12)
- 660 - pF
- 230 - pF
ISD = 43A - - 1.25 V ISD = 22A - - 1.00 V
rr
ISD = 43A, dISD/dt = 100A/µs - - 190 ns ISD = 43A, dISD/dt = 100A/µs - - 1.08 µC
4-2
Typical Performance Curves
HUF75842P3, HUF75842S3S
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
50
40
VGS= 10V
30
20
, DRAIN CURRENT (A)
D
I
10
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
NOTES: DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-2
10
-1
10
θJC
10
0
2
x R
θJC
+ T
175
t
2
C
1
10
600
100
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION
30
-5
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
VGS = 10V
-4
10
-3
10
-2
10
10
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
4-3
TC = 25oC FOR TEMPERATURES ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
I = I
25
-1
0
10
150
C
1
10
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