Intersil Corporation HUF75823D3, HUF75823D3S Datasheet

TM

HUF75823D3, HUF75823D3S

Data Sheet April 2000

14A, 150V, 0.150 Ohm, N-Channel,
UltraFET Power MOSFET

Packaging

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

DRAIN

(FLANGE)

HUF75823D3

SOURCE

HUF75823D3S

Symbol

D

G

S

DRAIN

(FLANGE)

File Number 4847

Features

• Ultra Low On-Resistance

-r

= 0.150Ω, VGS= 10V

DS(ON)

• Simulation Models

- Temperature Compensated PSPICE™ and SABER

©

Electrical Models

- Spice and SABER

©

Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75823D3 TO-251AA 75823D
HUF75823D3S TO-252AA 75823D

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75823D3ST.

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain Current

Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

1. TJ = 25oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

1

= 25oC, Unless Otherwise Specified

C

HUF75823D3, HUF75823D3S UNITS

DSS

DGR

GS

D
D

DM

D

STG

L

pkg

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

150 V
150 V
±20 V

14
10

Figure 4

85

0.57

-55 to 175

300
260

A
A

W

W/oC

o

C

o

C

o

C

HUF75823D3, HUF75823D3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

VDS = 140V, VGS = 0V - - 1 µA
VDS = 135V, VGS = 0V, TC = 150oC - - 250 µA

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

ON

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(10)

g(TH)

ISS

OSS

RSS

VGS = ±20V - - ±100 nA

TO-251 and TO-252 - - 1.76oC/W

VDD = 75V, ID = 14A
VGS= 10V,
RGS = 12Ω
(Figures 18, 19)

r

f

VGS = 0V to 10V - 23 29 nC
VGS = 0V to 2V - 1.5 1.9 nC

gs

gd

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

= 250µA, VGS = 0V (Figure 11) 150 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 14A, VGS = 10V (Figure 9) - 0.125 0.150 Ω

- - 100

o

C/W

- - 48 ns

- 7.7 - ns

-24-ns

-45-ns

-26-ns

- - 105 ns

= 0V to 20V VDD = 75V,

-4354nC
ID = 14A,
I

= 1.0mA

g(REF)

(Figures 13, 16, 17)

- 3.4 - nC

- 8.8 - nC

- 800 - pF

- 180 - pF

-65-pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD

RR

ISD = 14A - - 1.25 V
ISD = 7A - - 1.00 V

rr

ISD = 14A, dISD/dt = 100A/µs - - 150 ns
ISD = 14A, dISD/dt = 100A/µs - - 750 nC

Typical Performance Curves

HUF75823D3, HUF75823D3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100

125

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

150

175

0

25

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

VGS= 10V

50 75 100 125 150

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

P

DM

t

1

t

x R

θJC

+ T

2

C

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

θJC

10

1/t2

0

175

1

10

200

100

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

-5

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

VGS = 10V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

0

10

C

150

1

10

HUF75823D3, HUF75823D3S

Typical Performance Curves (Continued)

100

10

, DRAIN CURRENT (A)

D

I

0.5

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1

DS(ON)

10

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

SINGLE PULSE
TJ = MAX RATED

= 25oC

T

C

100

100µs

1ms

10ms

300

80

10

STARTING TJ = 150oC

1

If R = 0

, AVALANCHE CURRENT (A)

tAV = (L)(IAS)/(1.3*RATED BV

AS

I

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

0.5

0.001 0.01 0.1 10
tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

- VDD)

DSS

- VDD) +1]

DSS

1

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPEDINDUCTIVE SWITCHING

CAPABILITY

28

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

24

20

16

12

DRAIN CURRENT (A)

D,

I

= 15V

V

DD

TJ = 175oC

8

4

0

234 6

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

TJ = 25oC

5

28

24

20

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V
V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T

FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS

2.8
PULSE DURATION =

DUTY CYCLE = 0.5% MAX

2.4

2.0

1.6

80µs

1.2

1.0

= 6V

VGS = 5V

= 25oC

C

VGS = VDS, ID = 250µA

1.2

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.4

-80 -40 0 40 80 120 200
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 14A

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4

160

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 200
TJ, JUNCTION TEMPERATURE (oC)

160

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE