Intersil Corporation HUF75639G3, HUF75639P3, HUF75639S3S Datasheet

HUF75639G3, HUF75639P3, HUF75639S3S

Data Sheet October 1999 File Number 4477.7

56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETs

These N-Channel powerMOSFETs
are manufactured using the
innovative UltraFET™ process.

This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA75639.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75639G3 TO-247 75639G
HUF75639P3 TO-220AB 75639P
HUF75639S3S TO-263AB 75639S

NOTE: When ordering, usetheentirepartnumber. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST.

Features

• 56A, 100V

• Simulation Models

- Temperature Compensated PSPICE

TM

and SABER

Electrical Models

- Spice and Saber Thermal Impedance Models

- www.Intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

©

Packaging

DRAIN
(TAB)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

GATE
SOURCE

JEDEC TO-263AB

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

DRAIN

GATE

1

SABER

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

©

is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.

HUF75639G3, HUF75639P3, HUF75639S3S

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

100 V
100 V
±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

56

Figure 4

Figures 6, 14, 15

200

1.35

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

DSSID

DSS

= 250µA, VGS = 0V (Figure 11) 100 - - V
VDS = 95V, VGS = 0V - - 1 µA
VDS = 90V, VGS = 0V, TC = 150oC - - 250 µA

Gate to Source Leakage Current I

GSS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 56A, VGS = 10V (Figure 9) - 0.021 0.025 Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

θJC
θJA

(Figure 3) - - 0.74
TO-247 - - 30
TO-220, TO-263 - - 62

o

C/W

o

C/W

o

C/W
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

ON

OFF

VDD = 50V, ID≅ 56A,
RL = 0.89Ω, VGS= 10V,
RGS = 5.1Ω

r

f

- - 110 ns

-15- ns

-60- ns

-20- ns

-25- ns

- - 70 ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Reverse Transfer Capacitance Q

g(TOT)VGS

g(10)

g(TH)

gs
gd

= 0V to 20V VDD = 50V,
VGS = 0V to 10V - 57 75 nC
VGS = 0V to 2V - 3.7 4.5 nC

ID≅ 56A,
RL = 0.89Ω
I

= 1.0mA

g(REF)

(Figure 13)

- 110 130 nC

- 9.8 - nC

-24-nC

2

HUF75639G3, HUF75639P3, HUF75639S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

ISS

OSS

RSS

SD

rr

RR

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

- 2000 - pF

- 500 - pF

-65-pF

ISD = 56A - - 1.25 V
ISD = 56A, dISD/dt = 100A/µs - - 110 ns
ISD = 56A, dISD/dt = 100A/µs - - 320 nC

60

50

40

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125 175

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100 125 150 175

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

-2

10

-1

10

2

x R

θJC

θJC

0

10

t

1

t

2

+ T

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

3