Intersil Corporation HUF75631SK8 Datasheet
HUF75631SK8
Data Sheet October 1999
5.5A, 100V, 0.039 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC MS-012AA
BRANDING DASH
5
1
2
3
4
Symbol
SOURCE (1)
SOURCE (2)
SOURCE (3)
GATE (4)
DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)
File Number 4785
Features
• Ultra Low On-Resistance
-r
= 0.039Ω, VGS= 10V
DS(ON)
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
©
Electrical Models
- Spice and SABER
©
Thermal Impedance Models
- www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER PACKAGE BRAND
HUF75631SK8 MS-012AA 75631SK8
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75631SK8T.
Absolute Maximum Ratings T
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (TA= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TA= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
1. TJ = 25oC to 150oC.
2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second.
3. 152oC/W measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds
4. 189oC/W measured using FR-4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
= 25oC, Unless Otherwise Specified
A
DSS
DGR
GS
DM
STG
pkg
HUF75631SK8 UNITS
100 V
100 V
±20 V
D
D
D
L
5.5
3.5
Figure 4
2.5
20
-55 to 150
300
260
A
A
W
mW/oC
o
C
o
C
o
C
1
SABER
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
UltraFET™ is a trademark of Intersil Corporation. PSPICE™ is a registered trademark of MicroSim Corporation.
©
is a Copyright of Analogy Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
HUF75631SK8
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
DSS
VDS = 95V, VGS = 0V - - 1 µA
VDS = 90V, VGS = 0V, TA = 150oC - - 250 µA
GSS
GS(TH)VGS
DS(ON)ID
R
θJA
VGS = ±20V - - ±100 nA
Pad Area = 0.76 in2(490.3 mm2) (Note 2)
(Figures 20, 21)
Pad Area = 0.054 in2 (34.8 mm2) (Note 3)
(Figures 20, 21)
Pad Area = 0.0115 in2 (7.42 mm2)(Note 4)
(Figures 20, 21)
ON
VDD = 50V, ID = 5.5A
VGS= 10V, RGS = 6.8Ω
d(ON)
d(OFF)
OFF
g(TOT)VGS
g(10)
g(TH)
ISS
(Figures 18, 19)
r
f
VGS = 0V to 10V - 35 43 nC
VGS = 0V to 2V - 2.4 2.9 nC
gs
gd
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)
OSS
RSS
= 250µA, VGS = 0V (Figure 11) 100 - - V
= VDS, ID = 250µA (Figure 10) 2 - 4 V
= 5.5A, VGS = 10V (Figure 9) - 0.033 0.039 Ω
--50oC/W
- - 152
- - 189
o
o
C/W
C/W
- - 50 ns
-11-ns
-23-ns
-39-ns
-31-ns
- - 105 ns
= 0V to 20V VDD = 50V, ID = 5.5A,
I
= 1.0mA
g(REF)
-6679nC
(Figures 13, 16, 17)
- 4.75 - nC
-12-nC
- 1225 - pF
- 330 - pF
- 105 - pF
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
2
SD
RR
ISD = 5.5 A - - 1.25 V
ISD = 2.5 A - - 1.00 V
rr
ISD = 5.5 A, dISD/dt = 100A/µs--96ns
ISD = 5.5 A, dISD/dt = 100A/µs - - 310 nC
Typical Performance Curves
HUF75631SK8
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
125
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
10
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
1
0.05
0.02
0.01
0.1
, NORMALIZED
θJA
Z
0.01
THERMAL IMPEDANCE
SINGLE PULSE
0.001
-5
10
-4
10
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (s)
6
VGS= 10V, R
θJA
= 50oC/W
5
4
3
2
, DRAIN CURRENT (A)
D
I
1
0
25
50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
R
= 50oC/W
θJA
P
DM
t
1
t
x R
2
+ T
θJA
A
2
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
0
10
1
10
1/t2
θJA
150
3
10
500
100
VGS = 10V
10
, PEAK CURRENT (A)
TRANSCONDUCTANCE
DM
I
MAY LIMIT CURRENT
IN THIS REGION
1
-5
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
R
= 50oC/W
θJA
-4
10
-3
10
-2
10
-1
10
0
10
t, PULSE WIDTH (s)
TA = 25oC
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
1
10
150 - T
10
125
2
A
3
10
FIGURE 4. PEAK CURRENT CAPABILITY
3
Typical Performance Curves (Continued)
HUF75631SK8
200
100
10
OPERATION IN THIS
AREA MAY BE
1
, DRAIN CURRENT (A)
D
LIMITED BY r
I
0.1
1
V
DS
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
TJ = MAX RATED
T
= 25oC
A
10
R
θJA
= 50oC/W
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 15V
V
DD
40
30
100
100µs
1ms
10ms
200
100
10
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BV
If R ≠ 0
= (L/R)ln[(IAS*R)/(1.3*RATED BV
t
AV
STARTING TJ = 150oC
tAV, TIME IN AVALANCHE (ms)
- VDD)
DSS
- VDD) +1]
DSS
STARTING TJ = 25oC
10
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
50
40
30
VGS = 20V
V
= 10V
GS
VGS = 7V
V
= 6V
GS
VGS =5V
20
20
DRAIN CURRENT (A)
D,
I
10
0
234 56
TJ = 150oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25oC
TJ = -55oC
20
, DRAIN CURRENT (A)
D
I
10
0
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
ON RESISTANCE
1.0
NORMALIZED DRAIN TO SOURCE
0.5
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
VGS = 10V, ID = 5.5A
1.2
1.0
0.8
NORMALIZED GATE
THRESHOLD VOLTAGE
0.6
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
= 25oC
A
VGS = VDS, ID = 250µA
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4
FIGURE 10. NORMALIZED GATETHRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
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