intersil HUF75631S3S DATA SHEET
查询HUF75631S3S供应商
TM
HUF75631P3, HUF75631S3S
Data Sheet July 2000
33A, 100V, 0.040 Ohm, N-Channel,
UltraFET Power MOSFET
Packaging
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
GATE
GATE
DRAIN
(FLANGE)
HUF75631P3
SOURCE
HUF75631S3S
Symbol
D
G
S
DRAIN
(FLANGE)
File Number 4720.2
®
Features
• Ultra Low On-Resistance
-r
= 0.040Ω, VGS= 10V
DS(ON)
• Simulation Models
- Temperature Compensated PSPICE
®
and SABER
™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
Ordering Information
PART NUMBER PACKAGE BRAND
HUF75631P3 TO-220AB 75631P
HUF75631S3S TO-263AB 75631S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75631S3ST.
Absolute Maximum Ratings T
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain Current
Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
= 25oC, Unless Otherwise Specified
C
DSS
DGR
GS
DM
STG
pkg
HUF75631P3
HUF75631S3S UNITS
100 V
100 V
±20 V
D
D
D
L
33
23
Figure 4
120
0.80
-55 to 175
300
260
A
A
W
W/oC
o
C
o
C
o
C
1
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
UltraFET® is a registered trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc.
HUF75631P3, HUF75631S3S
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case R
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
GATE CHARGE SPECIFICATIONS
DSSID
DSS
VDS = 95V, VGS = 0V - - 1 µA
VDS = 90V, VGS = 0V, TC = 150oC - - 250 µA
GSS
GS(TH)VGS
DS(ON)ID
θJC
R
θJA
ON
VGS = ±20V - - ±100 nA
TO-220, TO-263 - - 1.25
VDD = 50V, ID = 33A
VGS= 10V,
d(ON)
RGS = 9.1Ω
(Figures 18, 19)
r
d(OFF)
f
OFF
= 250µA, VGS = 0V (Figure 11) 100 - - V
= VDS, ID = 250µA (Figure 10) 2 - 4 V
= 33A, VGS = 10V (Figure 9) - 0.033 0.040 Ω
o
C/W
--62oC/W
- - 100 ns
- 9.5 - ns
-57-ns
-40-ns
-55-ns
- - 145 ns
Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
g(TOT)VGS
g(10)
g(TH)
Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
ISS
OSS
RSS
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
SD
RR
= 0V to 20V VDD = 50V,
-6679nC
ID = 33A,
VGS = 0V to 10V - 35 42 nC
VGS = 0V to 2V - 2.4 2.9 nC
gs
gd
VDS = 25V, VGS = 0V,
I
= 1.0mA
g(REF)
(Figures 13, 16, 17)
- 5.4 - nC
-13-nC
- 1220 - pF
f = 1MHz
(Figure 12)
- 295 - pF
- 100 - pF
ISD = 33A - - 1.25 V
ISD = 17A - - 1.00 V
rr
ISD = 33A, dISD/dt = 100A/µs - - 112 ns
ISD = 33A, dISD/dt = 100A/µs - - 400 nC
2
Typical Performance Curves
HUF75631P3, HUF75631S3S
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATIONvs CASE
TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJC
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-5
10
-4
10
-3
10
t, RECTANGULAR PULSE DURATION (s)
40
30
VGS= 10V
20
, DRAIN CURRENT (A)
D
I
10
0
25
50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
P
DM
t
1
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-2
10
-1
10
θJC
10
0
2
x R
θJC
+ T
175
t
2
C
1
10
600
100
VGS = 10V
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
20
-5
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
3
TC = 25oC
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
175 - T
I = I
25
0
10
C
150
1
10
Loading...