Intersil Corporation HUF75542P3, HUF75542S3S Datasheet

TM

HUF75542P3, HUF75542S3S

Data Sheet June 2000

75A, 80V, 0.014 Ohm, N-Channel,
UltraFET Power MOSFETs

Packaging

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN (FLANGE)

HUF75542P3

HUF75542S3S

Symbol

D

DRAIN

(FLANGE)

File Number 4845.2

Features

• Ultra Low On-Resistance

-r

= 0.014Ω, VGS= 10V

DS(ON)

• Simulation Models

- Temperature Compensated PSPICE® and SABER
Electrical Models

- Spice and SABER

©

Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Ordering Information

PART NUMBER PACKAGE BRAND

©

G

S

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTE:

1. TJ = 25oC to 150oC.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified

C

HUF75542P3 TO-220AB 75542P
HUF75542S3S TO-263AB 75542S

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75542S3ST.

HUF75542P3, HUF75542S3S UNITS

DSS

DGR

GS

D
D

DM

D

STG

L

pkg

80 V
80 V

±20 V

75
58

Figure 4

230

1.54

-55 to 175

300
260

A
A

W

W/oC

o

C

o

C

o

C

1

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

SABER© is a Copyright of Analogy Inc.

HUF75542P3, HUF75542S3S

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

DSSID

DSS

VDS = 75V, VGS = 0V - - 1 µA
VDS = 70V, VGS = 0V, TC = 150oC - - 250 µA

GSS

GS(TH)VGS

DS(ON)ID

θJC

R

θJA

ON

VGS = ±20V - - ±100 nA

TO-220 and TO-263 - - 0.65oC/W

VDD = 40V, ID = 75A
VGS= 10V,

d(ON)

RGS = 3.9Ω
(Figures 18, 19)

r

d(OFF)

f

OFF

= 250µA, VGS = 0V (Figure 11) 80 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 75A, VGS = 10V (Figure 9) - 0.012 0.014 Ω

--62oC/W

- - 195 ns

- 12.5 - ns

- 117 - ns

-50-ns

-80-ns

- - 195 ns

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q

g(TOT)VGS

g(10)

g(TH)

Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ISS

OSS

RSS

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

SD

RR

= 0V to 20V VDD = 40V,

- 150 180 nC

ID = 75A,

VGS = 0V to 10V - 80 96 nC
VGS = 0V to 2V - 5.7 7 nC

gs

gd

VDS = 25V, VGS = 0V,

I

= 1.0mA

g(REF)

(Figures 13, 16, 17)

-15-nC

-33-nC

- 2750 - pF
f = 1MHz
(Figure 12)

- 700 - pF

- 250 - pF

ISD = 75A - - 1.25 V
ISD = 37.5A - - 1.00 V

rr

ISD = 75A, dISD/dt = 100A/µs - - 102 ns
ISD = 75A, dISD/dt = 100A/µs - - 255 nC

2

Typical Performance Curves

HUF75542P3, HUF75542S3S

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

80

VGS= 10V

60

40

, DRAIN CURRENT (A)

20

D

I

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

1000

, PEAK CURRENT (A)

100

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

50

-5

10

SINGLE PULSE

DUTY FACTOR: D = t
PEAK TJ = PDM x Z

NOTES:

-4

10

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

VGS = 10V

-4

10

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

θJC

P

1/t2

x R

+ T

θJC

C

10

TC = 25oC
FOR TEMPERATURES

ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I

25

0

10

DM

0

t

1

175 - T

150

t

2

1

10

C

1

10

FIGURE 4. PEAK CURRENT CAPABILITY

3

HUF75542P3, HUF75542S3S

Typical Performance Curves (Continued)

500

100

10

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1 10 100 200

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

SINGLE PULSE
TJ = MAX RATED

TC = 25oC

100µs

1ms

10ms

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

150

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

120

90

1000

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

100

, AVALANCHE CURRENT (A)

AS

I

10

0.001 0.1 1 10

STARTING TJ = 150oC

0.01
tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPEDINDUCTIVE SWITCHING

CAPABILITY

150

120

VGS = 20V

= 10V

V

GS

= 7V

V

GS

90

VGS = 6V

VGS = 5V

60

, DRAIN CURRENT (A)

D

I

30

0

23456

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 175oC

TJ = 25oC

TJ = -55oC

60

, DRAIN CURRENT (A)

D

I

30

0

01234

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5
VGS = 10V, ID = 75A

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

1.2

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

T

= 25oC

C

VGS = VDS, ID = 250µA

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE