Intersil Corporation HUF75531SK8 Datasheet

TM

HUF75531SK8

Data Sheet April 2000

6A, 80V, 0.030 Ohm, N-Channel,
UltraFET Power MOSFET

Packaging

JEDEC MS-012AA

BRANDING DASH

5

1

2

3

4

Symbol

SOURCE (1)
SOURCE (2)
SOURCE (3)

GATE (4)

DRAIN (8)
DRAIN (7)
DRAIN (6)
DRAIN (5)

File Number 4848

Features

• Ultra Low On-Resistance

-r

= 0.030Ω, VGS= 10V

DS(ON)

• Simulation Models

- Temperature Compensated PSPICE™ and SABER

©

Electrical Models

- Spice and SABER

©

Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75531SK8 MS-012AA 75531SK8

NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUF75531SK8T.

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain Current

Continuous (TA= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Continuous (TA= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Figures 6, 14, 15

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB370. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

NOTES:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second.

3. 152oC/W measured using FR-4 board with 0.054 in2 (34.8 mm2) copper pad at 1000 seconds

4. 189oC/W measured using FR-4 board with 0.0115 in2 (7.42 mm2) copper pad at 1000 seconds

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified

A

DSS

DGR

GS

DM

STG

pkg

HUF75531SK8 UNITS

80 V
80 V

±20 V

D
D

D

L

6
4

Figure 4

2.5
20

-55 to 150

300
260

A
A

W

mW/oC

o

C

o

C

o

C

1

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

HUF75531SK8

Electrical Specifications TA= 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

THERMAL SPECIFICATIONS

Thermal Resistance Junction to

R

Ambient

SWITCHING SPECIFICATIONS (V

GS

= 10V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain "Miller" Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

GSS

θJA

ON

r

f

OFF

g(10)

g(TH)

gs
gd

ISS

OSS

RSS

= 250µA, VGS = 0V (Figure 11) 80 - - V

VDS = 75V, VGS = 0V - - 1 µA

= 70V, VGS = 0V, TA = 150oC - - 250 µA

V

DS

VGS = ±20V - - ±100 nA

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 6A, VGS = 10V (Figure 9) - 0.025 0.030 Ω

Pad Area = 0.76 in2(490.3 mm2) (Note 2) - - 50
Pad Area = 0.054 in
Pad Area = 0.0115 in

VDD = 40V, ID = 6A
VGS= 10V,
RGS = 6.8Ω
(Figures 18, 19)

= 0V to 20V VDD = 40V,
VGS = 0V to 10V - 37 45 nC
VGS = 0V to 2V - 2.4 2.9 nC

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

2

(34.8 mm2) (Note 3) - - 152

2

(7.42 mm2)(Note 4) 189

- - 55 ns

- 10.5 - ns

-25-ns

-49-ns

-29-ns

- - 115 ns

-6882nC
ID = 6A,
I

= 1.0mA

g(REF)

(Figures 13, 16, 17)

- 4.8 - nC

-14-nC

- 1210 - pF

- 385 - pF

- 115 - pF

o
o
o

C/W
C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD

RR

ISD = 6A - - 1.25 V
I

= 4A - - 1.00 V

SD

rr

ISD = 6A, dISD/dt = 100A/µs - - 105 ns
ISD = 6A, dISD/dt = 100A/µs - - 325 nC

Typical Performance Curves

HUF75531SK8

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

3

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

Z

0.01

THERMAL IMPEDANCE

0.001

-5

10

-4

10

SINGLE PULSE

-3

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

125

0

25

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

VGS= 10V, R

50 75 100 125

TA, AMBIENT TEMPERATURE (oC)

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

0

10

1

10

θJA

1/t2

x R

10

θJA

R

θJA

2

θJA

t

= 50oC/W

= 50oC/W

1

t

2

+ T

A

150

10

3

500

100

VGS = 10V

10

, PEAK CURRENT (A)

TRANSCONDUCTANCE

DM

MAY LIMIT CURRENT

I

IN THIS REGION

1

-5

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

= 50oC/W

θJA

-4

10

-3

10

-2

10

-1

10

0

10

t, PULSE WIDTH (s)

TA = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

1

10

150 - T

25

10

125

2

A

3

10

FIGURE 4. PEAK CURRENT CAPABILITY

3

Typical Performance Curves (Continued)

HUF75531SK8

200

100

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

0.1
1

V

DS

DS(ON)

SINGLE PULSE
TJ = MAX RATED

T

= 25oC

A

, DRAIN TO SOURCE VOLTAGE (V)

10

R

θJA

= 50oC/W

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

30

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

DD

= 15V

25

20

15

100µs

1ms

10ms

100

200

200

100

10

, AVALANCHE CURRENT (A)

AS

I

1

0.01 0.1 1 100

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

STARTING TJ = 150oC

tAV, TIME IN AVALANCHE (ms)

- VDD)

DSS

- VDD) +1]

DSS

STARTING TJ = 25oC

10

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPEDINDUCTIVE SWITCHING

CAPABILITY

30

VGS = 20V

= 10V

V

GS

25

20

15

VGS = 7V
V

= 6V

GS

VGS =5V

10

DRAIN CURRENT (A)

D,

I

5

0

2.0 3.0 4.0 6.0

TJ = 150oC

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

TJ = 25oC

5.0

10

, DRAIN CURRENT (A)

D

I

5

0

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

T

FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 6A

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

= 25oC

A

VGS = VDS, ID = 250µA

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE