Intersil Corporation HUF75309T3ST Datasheet

HUF75309T3ST

Data Sheet June 1999 File Number

3A, 55V, 0.070 Ohm, N-Channel UltraFET
Power MOSFET

This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™process.Thisadvanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA75309.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75309T3ST SOT-223 5309

NOTE: HUF75309T3ST is available only in tape and reel.

4377.3

Features

• 3A, 55V

• Ultra Low On-Resistance, r

• Diode Exhibits Both High Speed and Soft Recovery

• Temperature Compensating PSPICE™ Model

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

DS(ON)

= 0.070Ω

Symbol

D

G

S

Packaging

SOT-223

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

23

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

HUF75309T3ST

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

HUF75309T3ST UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

55 V
55 V

±20V V

Drain Current

Continuous (Note 2) (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

3

Figure 5

Figures 6, 14, 15

1.1

9.09

-55 to 150

300
260

A

W

mW/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V (Figure 11) 55 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V
VDS = 50V, VGS = 0V - - 1 µA
VDS = 45V, VGS = 0V, TA = 150oC - - 250 µA

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R

GSS

ON

OFF

g(10)

g(TH)

ISS

OSS

RSS

θJA

VGS = ±20V - - 100 nA

= 3A, VGS = 10V (Figure 9) - 0.057 0.070 Ω

VDD = 30V, ID≅ 3A, RL = 10Ω,
VGS= 10V, RGS = 28Ω

r

- - 45 ns

-8-ns

-20-ns

-12-ns

f

-28-ns

- - 65 ns

= 0V to 20V VDD= 30V, ID≅ 3A,
VGS = 0V to 10V - 10.7 13 nC
VGS = 0V to 2V - 0.71 0.85 nC

RL = 10Ω
I

= 1.0mA

g(REF)

(Figure 13)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

-1923nC

- 352 - pF

- 146 - pF

-30-pF
Pad Area = 0.164 in2 (See note 2) - - 110
Pad Area = 0.068 in2 (See TB337) - - 126
Pad Area = 0.026 in2 (See TB337) - - 143

o
o
o

C/W
C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Reverse Recovery Time t
Reverse Recovered Charge Q

RR

NOTE:

2. 110oC/W measured using FR-4 board with 0.164 in2 footprint for 1000 seconds.

24

ISD = 3A - - 1.25 V
ISD = 3A, dISD/dt = 100A/µs--41ns

rr

ISD = 3A, dISD/dt = 100A/µs--59nC

Typical Performance Curves

HUF75309T3ST

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

4

R

= 110oC/W

θJA

3

2

, DRAIN CURRENT (A)

D

1

I

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

, NORMALIZED

JA

0.01

θ

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.001

-5

10

-4

10

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

100

10

1

, DRAIN CURRENT (A)

D

I

OPERATION IN THIS
AREA MAY BE

0.1

LIMITED BY r

DS(ON)

1 10 100

VDS, DRAIN TO SOURCE VOLTAGE (V)

V

DSS(MAX

) = 55V

-3

t, RECTANGULAR PULSE DURATION (s)

TJ = MAX RATED

T

= 25oC

A

R

= 110oC/W

θJA

100µs

1ms

10ms

P

DM

t

1

t
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

-1

10

50

10

0

TA = 25oC
R

= 110oC/W

θJA

1

10

θ

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

25

2

1/t2

x R

JA

10

+ T

JA

θ

2

o

C DERATE PEAK

150 - T

125

A

3

10

A

10

, PEAK CURRENT (A)

DM

I

200

1

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

t, PULSE WIDTH (s)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

25