Intersil Corporation HUF75307T3ST Datasheet

HUF75307T3ST

Data Sheet October 1999

2.6A, 55V, 0.090 Ohm, N-Channel UltraFET
Power MOSFET

This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™process.Thisadvanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA75307.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75307T3ST SOT-223 5307

NOTE: HUF75307T3ST is available only in tape and reel.

File Number 4364.4

Features

• 2.6A, 55V

• Ultra Low On-Resistance, r

DS(ON)

= 0.090Ω

• Diode Exhibits Both High Speed and Soft Recovery

• Temperature Compensating PSPICE™ Model

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

Packaging

SOT-223

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

HUF75307T3ST

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (Figure 2) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

D

DM

AS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

STG

L

pkg

55 V
55 V

±20V V

2.6

Figure 5

Figures 6, 14, 15

1.1

9.09

-55 to 150
300

260

A

W

mW/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q

DSSID

DSS

GSS

ON

r

f

OFF

g(10)

g(TH)

= 250µA, VGS = 0V (Figure 11) 55 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V
VDS = 50V, VGS = 0V - - 1 µA
V

= 45V, VGS = 0V, TA = 150oC - - 250 µA

DS

VGS = ±20V - - 100 nA

= 2.6A, VGS = 10V) (Figure 9) - 0.070 0.090 Ω

VDD = 30V, ID≅ 2.6A,
RL = 11.5Ω, VGS= 10V,
RGS = 25Ω

- - 55 ns

-5-ns

-30-ns

-35-ns

-25-ns

- - 90 ns

= 0V to 20V VDD = 30V,
VGS = 0V to 10V - 8.3 10 nC
VGS = 0V to 2V - 0.6 0.8 nC

ID≅ 2.6A,
RL = 11.5Ω
I

= 1.0mA

g(REF)

-1417nC

(Figure 13)
Gate to Source Gate Charge Qgs - 1.00 - nC
Gate to Drain “Miller” Charge Qgd - 4.00 - nC
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R

ISS

OSS

RSS

θJA

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 12)

- 250 - pF

- 115 - pF

-30-pF
Pad Area = 0.171 in2 (see note 2) - - 110
Pad Area = 0.068 in
Pad Area = 0.026 in

2
2

- - 128

- - 147

o
o
o

C/W
C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

NOTE:

2. 110

o

C/W measured using FR-4 board with 0.171in2 footprint for 1000s.

2

SD

rr

RR

ISD = 2.6A - - 1.25 V
ISD = 2.6A, dISD/dt = 100A/µs--40ns
ISD = 2.6A, dISD/dt = 100A/µs--50nC

Typical Performance Curves

HUF75307T3ST

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZEDPOWER DISSIPATION vs AMBIENT

TEMPERATURE

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

1

0.02

0.01

3.0
R

= 110oC/W

JA

θ

2.5

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs

AMBIENT TEMPERATURE

R

= 110oC/W

JA

θ

0.1

, NORMALIZED

JA

θ

Z

THERMAL IMPEDANCE

0.01

SINGLE PULSE

0.001

-5

10

-4

10

-3

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

100

10

1

, DRAIN CURRENT (A)

0.1

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

0.01
1 10 100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

DSS(MAX

TJ = MAX RATED
T

A

R

θ

) = 55V

= 25oC

= 110oC/W

JA

100µs

1ms

10ms

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

0

10

30

10

, PEAK CURRENT (A)

DM

I

200

1

-3

10

-2

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

1

10

TA = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

-1

10

0

10

t, PULSE WIDTH (s)

P

DM

1/t2

x R

JA

θ

2

10

o

C DERATE PEAK

25

R

1

10

t

1

t

2

+ T

JA

θ

150 - T

125

= 110oC/W

JA

θ

A

3

10

A

2

10

3

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

3