Intersil Corporation HUF75229P3 Datasheet

HUF75229P3

Data Sheet June 1998 File Number 4536.1

44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET

This N-Channel power MOSFET is manufactured using the innovative UltraFET™process.Thisadvanced

process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efﬁciency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Ordering Information

PART NUMBER PACKAGE BRAND

HUF75229P3 TO-220AB 75229P

NOTE: When ordering use the entire part number.

Features

• 44A, 50V

• Low On-Resistance, r

DS(ON)

= 0.022Ω

• Temperature Compensating PSPICE Model

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

UltraFET is a trademark of Intersil Corporation.

http://www.intersil.com or 407-727-9207

HUF75229P3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

50 V 50 V

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

pkg

Figure 5

Figure 6, 14, 15

0.6

-55 to 175

300 260

W/oC

NOTE:

1. TJ = 25oC to 150oC.

Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV Gate to Source Threshold Voltage V Zero Gate Voltage Drain Current I

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V (Figure 11) 50 - - V

= VDS, ID = 250µA (Figure 10) 2 - 4 V VDS = 45V, VGS = 0V - - 1 µA VDS = 40V, VGS = 0V, TC = 150oC - - 250 µA

Gate to Source Leakage Current I Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t Turn-On Delay Time t

d(ON)

Rise Time t Turn-Off Delay Time t

d(OFF)

Fall Time t Turn-Off Time t Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q Threshold Gate Charge Q

GSS

OFF

g(10)

g(TH)

VGS = ±20V - - ±100 nA

= 44A, VGS = 10V (Figure 9) 0.017 0.020 0.022 Ω

VDD = 30V, ID≅ 44A, RL = 0.68Ω, VGS= 10V, RGS = 9.1Ω (Figures 18, 19)

- - 105 ns

-12-ns

-58-ns

-33-ns

- - 100 ns

= 0V to 20V VDD = 30V, VGS = 0V to 10V - 35 43 nC VGS = 0V to 2V - 2.0 2.5 nC

ID≅ 44A, RL = 0.68Ω I

= 1.0mA

g(REF)

-6075nC

(Figures 13, 16, 17) Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction to Case R Thermal Resistance Junction to Ambient R

ISS

OSS

RSS

θJC θJA

VDS = 25V, VGS = 0V, f = 1MHz (Figure 12)

- 1060 - pF

- 405 - pF

-95-pF (Figure 3) - - 1.66 TO-220 - - 62

o o

C/W C/W

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V Reverse Recovery Time t Reverse Recovered Charge Q

ISD = 44A - - 1.25 V ISD = 44A, dISD/dt = 100A/µs--72ns ISD = 44A, dISD/dt = 100A/µs - - 120 nC

Typical Performance Curves

HUF75229P3

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0 25 50 75 100 150

125 175

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATIONvs CASE

TEMPERATURE

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

, DRAIN CURRENT (A)

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.1

, NORMALIZED

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

-4

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

200

100

, DRAIN CURRENT (A)

OPERATION IN THIS AREA MAY BE LIMITED BY r

DS(ON)

MAX = 50V

DSS

1 10 100 200

VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ = MAX RATED

TC = 25oC

-3

-2

t, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

, PEAK CURRENT (A) I

400

100

VGS = 10V

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-5

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

TC = 25oC

-4

-3

t, PULSE WIDTH (s)

1/t2

x R

FOR TEMPERATURES ABOVE 25

+ T

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

-2

175 - T

150

-1

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

+ 5 hidden pages