• Pin Compatible with NMOS 8254 and the Intersil 82C54
• High Speed, “No Wait State” Operation with 5MHz
HS-80C86RH
• Three Independent 16-Bit Counters
• Six Programmable Counter Modes
• Binary or BCD Counting
• Status Read Back Command
• Hardened Field, Self-Aligned, Junction Isolated CMOS Process
• Single 5V Supply
• Military Temperature Range -55
5
RAD (Si)
8
RAD (Si)/sec
6
RAD (Si)
o
C to +125oC
Description
The Intersil HS-82C54RH is a high performance, radiation hardened
CMOS version of the industry standard 8254 and is manufactured
using a hardened field, self-aligned silicon gate CMOS process. It has
three independently programmable and functional 16-bit counters,
each capable of handling clock input frequencies of up to 5MHz. Six
programmable timer modes allow the HS-82C54RH to be used as an
event counter, elapsed time indicator, a programmable one-shot, or
for any other timing application. The high performance, radiation
hardness, and industry standard configuration of the HS-82C54RH
make it compatible with the HS-80C86RH radiation hardened microprocessor.
Static CMOS circuit design insures low operating power. The Intersil
hardened field CMOS process results in performance equal to or
greater than existing radiation resistant products at a fraction of the
power.
Pinouts
24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL
PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24
TOP VIEW
1
D7
2
D6
3
D5
4
D4
5
D3
6
D2
7
D1
8
D0
9
CLK 0
10
OUT 0
11
GATE 0
12
GND
24 LEAD CERAMIC METAL SEAL FLATPACK
PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F24
TOP VIEW
D7
D6
D5
D4
D3
D2
D1
D0
CLK 0
OUT 0
GATE 0
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
24
23
22
21
20
19
18
17
16
15
14
13
VDD
WR
RD
CS
A1
A0
CLK 2
OUT 2
GATE 2
CLK 1
GATE 1
OUT 1
HS1-82C54RH-Q-55oC to +125oC24 Lead SBDIP
HS1-82C54RH-8-55oC to +125oC24 Lead SBDIP
HS1-82C54RH-Sample+25oC24 Lead SBDIP
HS9-82C54RH-Q-55oC to +125oC24 Lead Ceramic Flatpack
HS9-82C54RH-8-55oC to +125oC24 Lead Ceramic Flatpack
HS9-82C54RH/Sample+25oC24 Lead Ceramic Flatpack
HS9-82C54RH/Proto-55oC to +125oC24 Lead Ceramic Flatpack
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
D7-D01-8I/ODATA: Bi-directional three state data bus lines, connected to system data bus.
CLK 09ICLOCK 0: Clock input of Counter 0.
OUT 010OOUT 0: Output of Counter 0.
GATE 011IGATE 0: Gate input of Counter 0.
GND12GROUND: Power supply connection.
OUT 113OOUT 1: Output of Counter 1.
GATE 114IGATE 1: Gate input of Counter 1.
CLK 115ICLOCK 1: Clock input of Counter 1.
GATE 216IGATE 2: Gate input of Counter 2.
OUT 217OOUT 2: Output of Counter 2.
CLK 218ICLOCK 2: Clock input of Counter 2.
A0, A119-20IADDRESS: Select inputs for one of the three counters or Control Word Register for read/write
CS21ICHIP SELECT: A low on this input enables the HS-82C54RH to respond toRD and WR signals.
RD22IREAD: This input is low during CPU read operations.
WR23IWRITE: This input is low during CPU write operations.
VDD24VDD: The +5V power supply pin. A 0.1µF capacitor between pins 12 and 24 is recommended
NUMBERTYPEDESCRIPTION
operations. Normally connected to the system address bus.
A1A0Selects
00Counter 0
01Counter 1
10Counter 2
11Control Word Register
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
AC’s Tested at Worst Case VDD (s), Guaranteed Over Full Operating Range.
GROUP A
PARAMETERSYMBOLCONDITIONS
Address Stable Before RDTAVRLVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC75 - ns
CS Stable Before RDTSLRLVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC0 - ns
Address Hold Time After RDTRHAXVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC0 - ns
RD Pulse WidthTRLRHVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC240-ns
Data Delay from RDTRLDVVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC-200ns
SUBGROUPSTEMPERATURE
LIMITS
UNITSMINMAX
Spec Number 518059
950
Specifications HS-82C54RH
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
AC’s Tested at Worst Case VDD (s), Guaranteed Over Full Operating Range.
GROUP A
PARAMETERSYMBOLCONDITIONS
Command Recovery TimeTRHRLVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC320-ns
WRITE CYCLE
Address Stable Before WRTAVWLVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC0 - ns
CS Stable Before WRTSLWLVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC0 - ns
Address Hold Time After WRTWHAXVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC0 - ns
WR Pulse WidthTWLWHVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC240-ns
Data Setup Time Before WRTDVWHVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC225-ns
Data Hold Time After WRTWHDXVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC35 - ns
Command Recovery TimeTWHWLVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC320-ns
CLOCK AND GATE
Clock PeriodTCLCLVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC200-ns
High Pulse WidthTCHCLVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC100-ns
Low Pulse WidthTCLCHVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC100-ns
Gate Width HighTGHGLVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC80 - ns
Gate Width LowTGLGHVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC80 - ns
Gate Setup Time to CLKTGVCHVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC80 - ns
Gate Hold Time After CLKTCHGXVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC80 - ns
Output Delay from CLKTCLOVVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC-240ns
Output Delay from GateTGLOVVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC-200ns
Data Delay from Address ReadTAVAVVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC-275ns
Output Delay from WR HighTWHOVVDD = 4.5V9, 10, 11-55oC, +25oC, +125oC-260ns
SUBGROUPSTEMPERATURE
LIMITS
UNITSMINMAX
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETERSYMBOLCONDITIONSTEMPERATURE
Input CapacitanceCINVDD = Open, f = 1MHz,
All measurements referenced to device ground.
Output CapacitanceCOUTVDD = Open, f = 1MHz,
All measurements referenced to device ground.
I/O CapacitanceCOUTVDD = Open, f = 1MHz,
All measurements referenced to device ground.
TIMING REQUIREMENTS
RD/ to Data FloatTRHDZVDD = 4.5V and 5.5V-55oC < TA < +125oC8145ns
TIMING RESPONSES
Clock Rise TimeTCH1CH2 VDD = 4.5V and 5.5V, 1.0V to 3.5V-55oC < TA < +125oC-25ns
Clock Fall TimeTCL1CL2VDD = 4.5V and 5.5V, 3.5V to 1.0V-55oC < TA < +125oC-25ns
NOTE: The parameters listed are controlled via design or process parameters and are not directly tested. These parameters are character-
ized upon initial design release and upon design changes which would affect these characteristics.
TA = +25oC-15pF
TA = +25oC-15pF
TA = +25oC-20pF
UNITSMINMAX
Spec Number 518059
951
Specifications HS-82C54RH
TABLE 4. POST 100K RAD ELECTRICAL PERFORMANCE CHARACTERISTICS
NOTE: See +25oC limits in Table 1 and Table 2 for Post RAD limits (Sub Groups 1, 7 and 9).
TABLE 5. BURN-IN DELTA PARAMETERS (+25oC)
PARAMETERSYMBOLDELTA LIMITS
Standby Power Supply CurrentIDDSB±2µA
Output Leakage CurrentIOZL, IOZH±2µA
Input Leakage CurrentIIH, IIL±200nA
Output Low CurrentIOL±500µA or 10% of BBI Reading*
TTL Output High CurrentIOH TTL±500µA or 10% of BBI Reading*
CMOS Output High CurrentIOH CMOS±20µA or 10% of BBI Reading*
2 Samples/Wafer, 0 Rejects
100% Die Attach
100% Nondestructive Bond Pull, Method 2023
Sample - Wire Bond Pull Monitor, Method 2011
Sample - Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition A
CSI and/or GSI PreCap (Note 6)
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% PIND, Method 2020, Condition A
100% External Visual
100% Serialization
100% Initial Electrical Test (T0)
100% Static Burn-In 1, Condition A or B, 72 Hours Min,
NOTES:
1. Failures from subgroup 1, 7 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the
failures from subgroup 7.
2. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004.
3. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
4. Group B and D inspections are optional and will not be performed unless required by the P.O. When required, the P.O. should include
separate line items for Group B Test, Group B Samples, Group D Test and Group D Samples.
5. Group D Generic Data, as defined by MIL-I-38535, is optional and will not be supplied unless required by the P.O. When required, the
P.O. should include a separate line item for Group D Generic Data. Generic data is not guaranteed to be available and is therefore not
available in all cases.
6. CSI and/or GSI inspections are optional and will not be performed unless required by theP.O. When required, the P.O. should include
separate line items for CSI PreCap inspection, CSI final inspection, GSI PreCap inspection, and/or GSI final inspection.
7. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number , Lot Number, Quan-
tity).
• Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage.
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, T est Package used, Specification Numbers, Test
• X-Ray report and film. Includes penetrometer measurements.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Lot Serial Number Sheet (Good units serial number and lot number).
• Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test.
• Group B and D attributes and/or Generic data is included when required by the P.O.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed
o
C Min, Method 1015
+125
equipment, etc. Radiation Read and Record data on file at Intersil.
2 Samples/Wafer, 0 Rejects
100% Die Attach
Periodic- Wire Bond Pull Monitor, Method 2011
Periodic- Die Shear Monitor, Method 2019 or 2027
100% Internal Visual Inspection, Method 2010, Condition B
CSI an/or GSI PreCap (Note 5)
100% Temperature Cycle, Method 1010, Condition C,
10 Cycles
100% Constant Acceleration, Method 2001, Condition per
Method 5004
100% External Visual
100% Initial Electrical Test
NOTES:
1. Failures from subgroup 1, 7 are used for calculating PDA. The maximum allowable PDA = 5%.
2. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005.
3. Group B, C and D inspections are optional and will not be performed unless required by the P.O. When required, the P.O. should include
separate line items for Group B Test, Group C Test, Group C Samples, Group D Test and Group D Samples.
4. Group C and/or Group D Generic Data, as defined by MIL-I-38535, is optional and will not be supplied unless required by the P.O. When
required, the P.O. should include a separate line item for Group C Generic Data and/or Group D Generic Data. Generic data is not guaranteed to be available and is therefore not available in all cases.
5. CSI and/or GSI inspections are optional and will not be performed unless required by theP.O. When required, the P.O. should include
separate line items for CSI PreCap inspection, CSI final inspection, GSI PreCap inspection, and/or GSI final inspection.
6. Data Package Contents:
• Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number , Lot Number, Quan-
tity).
• GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, T est Package used, Specification Numbers, Test
equipment, etc. Radiation Read and Record data on file at Intersil.
• Screening, Electrical, and Group A attributes (Screening attributes begin after package seal).
• Group B, C and D attributes and/or Generic data is included when required by the P.O.
• The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed