Intersil Corporation HS-65647RH Datasheet
August 1995
HS-65647RH
Radiation Hardened
8K x 8 SOS CMOS Static RAM
Features
• 1.2 Micron Radiation Hardened SOS CMOS
- Total Dose 3 x 10
- Transient Upset >1 x 10
- Single Event Upset < 1 x 10
• Latch-up Free
• LET Threshold >250 MEV/mg/cm2
• Low Standby Supply Current 10mA (Max)
• Low Operating Supply Current 100mA (2MHz)
• Fast Access Time 50ns (Max), 35ns (Typ)
• High Output Drive Capability
• Gated Input Buffers (Gated by E2)
• Six Transistor Memory Cell
• Fully Static Design
• Asynchronous Operation
• CMOS Inputs
• 5V Single Power Supply
• Military Temperature Range -55
• Industry Standard JEDEC Pinout
5
RAD (Si)
11
RAD (Si)/s
-12
Errors/Bit-Day
o
C to +125oC
Description
The Intersil HS-65647RH is a fully asynchronous 8K x 8
radiation hardened static RAM. This RAM is fabricated using
the Intersil 1.2 micron silicon-on-sapphire CMOS technology.
This technology gives exceptional hardness to all types of
radiation, including neutron fluence, total ionizing dose, high
intensity ionizing dose rates, and cosmic rays.
Functional Diagram
AI
ROW
I/O0
I/O7
E2
E1
G
W
E1 E2 G W MODE
X 0 X X Low Power Standby
1 1 X X Disabled
0111Enabled
0101Read
0 1 X 0 Write
ROW
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
128 X 512
MEMORY ARRAY
COLUMN I/O
COLUMN DECODER
TRUTH TABLE
AI COL
Low power operation is provided by a fully static design. Low
standby power can be achieved without pull-up resistors,
due to the gated input buffer design.
Ordering Information
PART NUMBER TEMPERATURE RANGE PACKAGE
HS1-65647RH-Q -55oC to +125oC 28 Lead SBDIP
HS1-65647RH-8 -55oC to +125oC 28 Lead SBDIP
HS1-65647RH/Proto -55oC to +125oC 28 Lead SBDIP
HS1-65647RH/Sample +25oC 28 Lead SBDIP
HS9-65647RH-Q -55oC to +125oC 28 Lead Ceramic Flatpack
HS9-65647RH-8 -55oC to +125oC 28 Lead Ceramic Flatpack
HS9-65647RH/Proto -55oC to +125oC 28 Lead Ceramic Flatpack
HS9-65647RH/Sample +25oC 28 Lead Ceramic Flatpack
HS9A-65647RH-Q -55oC to +125oC 36 Lead Ceramic Flatpack
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
824
Spec Number
518729
File Number 2928.2
DB NA
Pinouts
HS1-65647RH 28 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T28
TOP VIEW
HS-65647RH
HS9-65647RH 28 LEAD CERAMIC METAL
SEAL FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F28
TOP VIEW
NC
A12
DQ0
DQ1
DQ2
GND
28
1
2
3
A7
A6
4
A5
5
A4
6
7
A3
A2
8
A1
9
10
A0
11
12
13
14
VDD
W
27
E2
26
A8
25
A9
24
A11
23
G
22
A10
21
20
E1
DQ7
19
DQ6
18
DQ5
17
16
DQ4
DQ3
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VDD
W
E2
A8
A9
A11
G
A10
E1
DQ7
DQ6
DQ5
DQ4
DQ3
HS9A-65647RH 36 LEAD CERAMIC METAL
SEAL FLATPACK P ACKAGE (FLATP ACK)
INTERSIL OUTLINE K36.A
TOP VIEW
NC
A12
DQ0
DQ1
DQ2
GND
DQ0
DQ1
DQ2
GND
1
A7
A6
A5
A4
A3
A2
A1
A0
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
VDD
W
E2
A8
A9
A11
G
A10
E1
DQ7
DQ6
DQ5
DQ4
DQ3
DQ0
DQ1
DQ2
GND
825
Spec Number 518729
Specifications HS-65647RH
Absolute Maximum Ratings Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VDD+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Typical Derating Factor. . . . . . . . . . . . 3mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range (VDD) . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage (VIL) . . . . . . . . . . . . . . . . . . . . . . 0V to +0.2VDD
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Thermal Resistance θ
28 Lead SBDIP Package. . . . . . . . . . . . . 45oC/W 8.0oC/W
28/36 Lead Ceramic Flatpack Package. . 53.4oC/W 7.4oC/W
Maximum Package Power Dissipation at +125oC Ambient
28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . 1.11W
28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . . . . . 0.94W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
28 Lead SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . .22.2mW/C
28/36 Lead Ceramic Flatpack Package. . . . . . . . . . . . .18.7mW/C
Input High Voltage (VIH). . . . . . . . . . . . . . . . . . . . . .0.8VDD to VDD
Data Retention Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . 2.0V
Input Rise and Fall Time. . . . . . . . . . . . . . . . . . . . . . . . . .40ns Max.
JA
θ
JC
(NOTE 1)
PARAMETER SYMBOL
High Level Output
Voltage
Low Level Output
Voltage
High Impedance Output
Leakage Current
Input Leakage Current IIH or IIL VDD = 5.5V, VI = VDD or
Standby Supply Current IDDSB
Enable Supply Current IDDEN VDD = 5.5V, IO = 0mA,
Operating Supply
Current (Note 2)
Data Retention Supply
Current
Functional Tests FT VDD = 4.5V and 5.5V
Noise Immunity
Functional Test
NOTES:
1. All voltages referenced to device GND.
2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.)
3. In order for this device to be in low power standby mode. E2 must be disabled (low).
VOH VDD = 4.5V, IO = -5mA
VOL VDD = 4.5V, IO = 8.0mA
IOZL or
IOZH
(Note 3)
IDDOP VDD = 5.5V, IO = 0mA,
IDDDR VDD = 2.0V, IO = 0mA,
FN VDD = 4.5, VIL = 0.2 VDD
CONDITIONS
VI = VDD or GND
VI = VDD or GND
VDD = 5.5V, VO = GND or
VDD, VI = VDD or GND
E1 = VDD, E2 = 0V
GND
VDD = 5.5V, IO = 0mA,
VI = VDD or GND
E1 = VDD, E2 = 0V
VI = VDD or GND
E1 = 0.0V, E2 = VDD
VI = VDD or GND,
E2 = VDD, E1 = 0V,
f = 2MHz
VI = VDD or GND
E1 = VDD, E2 = 0V
VI = VDD or GND, f = 1MHz
VIH = 0.8 VDD, f = 1MHz
GROUP A
SUBGROUPS TEMPERATURE
1, 2, 3 -55oC, +25oC,
+85oC, +125oC
1, 2, 3 -55oC, +25oC,
+85oC, +125oC
1, 3 -55oC, +25oC -10 10 µA
2 +85oC -30 30 µA
2 +125oC -60 60 µA
1, 2, 3 -55oC, +25oC,
+85oC, +125oC
1, 3 -55oC, +25oC - 500 µA
2 +85oC-4mA
2 +125oC - 10 mA
3 -55oC - 77 mA
1 +25oC - 73 mA
2 +85oC, +125oC - 64 mA
3 -55oC - 100 mA
1 +25oC - 86 mA
2 +85oC, +125oC - 75 mA
1, 3 -55oC, +25oC-50µA
2 +85oC-1mA
2 +125oC-4mA
7, 8A, 8B -55oC, +25oC,
+85oC, +125oC
7, 8A, 8B -55oC, +25oC,
+85oC, +125oC
LIMITS
UNITSMIN MAX
VDD-
0.4
- 0.4 V
-1.0 1.0 µA
-- -
-- -
-V
826
Spec Number 518729
Specifications HS-65647RH
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
(NOTES 1, 2, 3)
PARAMETER SYMBOL
Address Access Time TAVQV VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC - 50 ns
Output Enable Access Time TGLQV VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC - 15 ns
CONDITIONS
GROUP A
SUBGROUPS TEMPERATURE
UNITSMIN MAX
Chip Enable Access Time TE1LQV
TE2HQV
Write Recovery Time TWHAX
TE1HAX
TE2LAX
Chip Enable to End-of-Write TE1LE1H
TE2HE2L
Address Setup Time TAVWL
TAVE1L
TAVE2H
Write Enable Pulse Width TWLWH VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC25 - ns
Data Setup Time TDVWH VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC30 - ns
TDVE1H
TDVE2L
Data Hold Time TWHDX VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC0 - ns
Address Hold Time TAVE1H
TAVE2L
TE2LDX
TE1HDX
NOTES:
1. AC measurements tested at worst case VDD. Guaranteed over full operating range.
2. AC measurements assume transition time≤ 5ns; input levels = 0.0V to VDD; timing reference levels = 2.0V; output load = 1 TTL equivalent
load and CL ≥ 50pF, for CL > 50pF, access times are derated 0.15ns/pF.
3. For timing waveforms, see Low Voltage Data Retention and Read/Write Cycles.
VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC - 50 ns
VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC0 - ns
VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC35 - ns
VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC5 - ns
VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC30 - ns
VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC40 - ns
VDD = 4.5V 9, 10, 11 -55oC, +25oC, +85oC, +125oC0 - ns
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
Input Capacitance CIN VDD = Open, f = 1MHz 1, 2, 4 TA = +25oC - 12 pF
VDD = Open, f = 1MHz 1, 2, 4 TA = +25oC - 12 pF
I/O Capacitance CI/O VDD = Open, f = 1MHz 1, 2, 4 TA = +25oC - 12 pF
VDD = Open, f = 1MHz 1, 2, 4 TA = +25oC - 12 pF
Write Enable to Output in
High Z
TWLQZ VDD = 4.5V and 5.5V 1 -55oC ≤ TA≤ +125oC - 10 ns
UNITSMIN MAX
Spec Number 518729
827
Specifications HS-65647RH
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE
Write Enable High to Output ON
Chip Enable to Output ON TE1LQX
Output Enable to Output
ON
Chip Enable to Output in
High Z
Output Disable to Output in
High Z
Output Hold from Address
Change
NOTES:
1. The parameters listed are controlled via design or process parameters and are not directly tested. These parameters are
characterized upon initial design release and upon design changes which would affect these characteristics.
2. Applies to DIP device types only.
3. Applies to Flatpack device types only.
4. All measurements referenced to device GND.
TWHQX VDD = 4.5V and 5.5V 1 -55oC ≤ TA≤ +125oC0 - ns
VDD = 4.5V and 5.5V 1 -55oC ≤ TA≤ +125oC0 - ns
TE2HQX
TGLQX VDD = 4.5V and 5.5V 1 -55oC ≤ TA≤ +125oC0 - ns
TE1HQZ
TE2LQZ
TGHQZ VDD = 4.5V and 5.5V 1 -55oC ≤ TA≤ +125oC - 15 ns
TAXQX VDD = 4.5V and 5.5V 1 -55oC ≤ TA≤ +125oC0 - ns
VDD = 4.5V and 5.5V 1 -55oC ≤ TA≤ +125oC - 15 ns
UNITSMIN MAX
TABLE 4. POST 300K RAD DC ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER SYMBOL CONDITIONS TEMPERATURE
Standby Supply Current IDDSB VDD = 5.5V, IO = 0mA, E1 = VDD,
E2 = 0V, VI = VDD or GND
Enabled Supply Current IDDEN VDD = 5.5V, IO = 0mA, E1 = 0.0V,
E2 = VDD, VI = VDD or GND
Operating Supply Current
(Note 2)
Data Retention Supply Current IDDDR VDD = 2.0V, IO = 0mA, E = VDD +25oC-6mA
NOTES:
1. DC parameters not listed in this table are tested at the +25oC pre-irradiation test limits. All AC parameters are tested at the +25oC preirradiation test limits.
2. Typical IDDOP derating = 3mA/MHz (3mA increase in IDDOP per 1MHz increase in address frequency.)
IDDOP VDD = 5.5V, IO = 0mA, f = 2MHz,
E = 0V,VI = VDD or GND
+25oC - 10 mA
+25oC - 82 mA
+25oC - 100 mA
UNITSMIN MAX
828
Spec Number 518729
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