HS-5104ARH-T
Data Sheet July 1999 File Number
Radiation Hardened Low Noise Quad
Operational Amplifier
Intersil‘s Satellite Applications FlowTM (SAF) devices are
fully tested and guaranteed to 100kRAD total dose. These
QML Class T devices are processed to a standard flow
intended to meet the cost and shorter lead-time needs of
large volume satellite manufacturers, while maintaining a
high level of reliability.
The HS-5104ARH-T is a radiation hardened, monolithic
quad operational amplifier that provides highly reliable
performance in harsh radiation environments. Its excellent
noise characteristics coupled with a unique array of dynamic
specifications make this amplifier well-suited for a variety of
satellite system applications. Dielectrically isolated, bipolar
processing makes this device immune to Single Event
Latch-up.
The HS-5104ARH-T shows almost no change in offset
voltage after exposure to 100K RAD(Si) gamma radiation,
with only a minor increase in current. Complementing these
specifications is a post radiation open loop gain in excess of
40K.
This quad operational amplifier is available in an industry
standard pinout, allowing for immediate interchangeability
with most other quad operational amplifiers.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-5104ARH-T
are contained in SMD 5962-95690. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/ne wsafc lasst.asp
Intersil‘s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
TEMP.
ORDERING
NUMBER
5962R9569001TCC HS1-5104ARH-T -55 to 125
HS1-5104ARH/Proto HS1-5104ARH/Proto -55 to 125
5962R9569001TXC HS9-5104ARH-T -55 to 125
HS9-5104ARH/Proto HS9-5104ARH/Proto -55 to 125
NOTE:
Minimumorder quantityfor-T is 150 units through
distribution, or 450 units direct.
PART
NUMBER
RANGE
(oC)
4606.1
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
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- Gamma Dose (γ) 1 x 10
RAD(Si)
- No Latch-Up, Dielectrically Isolated Device Islands
• Low Noise
- At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 4.3nV/√
- At 1kHz . . . . . . . . . . . . . . . . . . . . . . . . 0.6pA/√
Hz (Typ)
Hz (Typ)
• Low Offset Voltage . . . . . . . . . . . . . . . . . . . . 3.0mV (Max)
• High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 2.0V/µs (Typ)
• Gain Bandwidth Product . . . . . . . . . . . . . . . 8.0MHz (Typ)
Pinouts
HS1-5104ARH-T (SBDIP), CDIP2-T14
TOP VIEW
1
OUT 1
2
-IN1
3
+IN1
4
V+
5
+IN2
6
-IN2
7
OUT 2
HS9-5104ARH-T (FLATPACK), CDFP3-F14
TOP VIEW
OUT 1
-IN1
+IN1
V+
+IN2
-IN2
OUT 2
1
2
3
4
5
6
7
14
OUT 4
13
-IN4
12
+IN4
11
V-
10
+IN3
9
-IN3
8
OUT 3
14
13
12
11
10
9
8
OUT 4
-IN4
+IN4
V+IN3
-IN3
OUT 3
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
| Copyright © Intersil Corporation 1999
Die Characteristics
HS-5104ARH-T
DIE DIMENSIONS:
(2420µm x 2530µm x 483µm ±25.4µm)
95 x 99 x 19mils ±1mil
METALLIZATION:
Type: Al Si Cu
Thickness: 16.0k
Å ±2kÅ
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Silicon
Metallization Mask Layout
+IN2 V+ +IN1
-IN2
PASSIVATION:
WORST CASE CURRENT DENSITY:
TRANSISTOR COUNT:
PROCESS:
HS-5104ARH-T
Type: Nitride (Si
Nitride Thickness: 3.5k
) over Silox (SiO2)
3N4
Å ±1.5kÅ
Silox Thickness: 12.0kű2kÅ
< 2.0e5 A/cm
2
175
Bipolar DI
-IN1
OUT2
OUT3
-IN3
+IN4V-+IN3
OUT1
OUT4
-IN4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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