Intersil Corporation HS-390RH-T Datasheet

HS-390RH-T

Data Sheet July 1999 File Number

Radiation Hardened
CMOS Dual SPDT Analog Switch

Intersil’sSatellite Applications FlowTM(SAF) devices are fully
tested and guaranteed to 100kRAD total dose. This QML
Class T device is processed to a standard flow intended to
meet the cost and shorter lead-time needs of large volume
satellite manufacturers, while maintaining a high level of
reliability.

The HS-390RH-T analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by
layout (thin oxide tabs extending to a channel stop) and
processing (hardened gate oxide). These switches offer low­resistance switching performance for analog voltages up to
the supply rails. “ON” resistance is low and staysreasonably
constant overthe full range of operating voltageand current.
“ON” resistance also stays reasonably constant when
exposed to radiation, being typically 30Ω pre-rad and 35Ω
post 100kRAD(Si). Break-before-make switching is
controlled by 5V digital inputs.

Specifications

Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.

Detailed Electrical Specifications for the HS-390RH-T
are contained in SMD 5962-95813. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/ne wsafc lasst.asp

Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.

www.intersil.com/quality/manuals.asp

Ordering Information

4604.1

Features

• QML Class T, Per MIL-PRF-38535

• Radiation Performance

- Gamma Dose (γ) 1 x 105 RAD(Si)

- No Latch-Up, Dielectrically Isolated Device Islands

• Pin for Pin Compatible with Intersil HI-390 Series Analog
Switches

• Analog Signal Range 15V

• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)

•Low r

. . . . . . . . . . . . . . . . . . . . . . 60Ω (Max, Post Rad)

ON

• Low Operating Power. . . . . . . . . . 100µA (Max, Post Rad)

Pinouts

HS1-390RH (SBDIP), CDIP2-T16

TOP VIEW

16

S1

15

IN1

14

V-

13

GND

12

NC

11

V+

10

IN2

9

S2

15
14
13
12
11
10
9

S1
IN1
V­GND
NC
V+
IN2
S2

D1

NC

D3
S3
S4
D4

NC

D2

1

D1

2

NC

3

D3

4

S3

5

S4

6

D4

7

NC

8

D2

HS9-390RH (FLATPACK), CDFP4-F16

TOP VIEW

116
2
3
4
5
6
7
8

TEMP.

ORDERING

NUMBER

5962R9581303TEC HS1-390RH-T -55 to 125
5962R9581303TYC HS9-390RH-T -55 to 125

NOTE:

Minimumorderquantity for -T is 150 units through

PART

NUMBER

RANGE

(oC)

distribution, or 450 units direct.

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Functional Diagram

IN

LOGIC SW1 SW2 SW3 SW4

0 OFF ON
1 ON OFF

www.intersil.com or 407-727-9207

Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.

N P

D

TRUTH TABLE

| Copyright © Intersil Corporation 1999

Die Characteristics

HS-390RH-T

DIE DIMENSIONS:

(2130µm x 1930µm x 279µm ±25.4µm)
84 x 76 x 11mils ±1mil

METALLIZATION:

Type: Al
Thickness: 12.5k

Å ±2kÅ

SUBSTRATE POTENTIAL:

Unbiased (DI)

BACKSIDE FINISH:

Gold

Metallization Mask Layout

S3

D3

HS-390RH-T

D1

PASSIVATION:

Type: Silox (S
Thickness: 8.0k

)

iO2

Å ±1.0kÅ

WORST CASE CURRENT DENSITY:

< 2.0e5 A/cm

2

TRANSISTOR COUNT:

76

PROCESS:

Metal Gate CMOS, Dielectric Isolation

S1

IN1

V-

GND

S4

V+

D4

D2

S2

IN2

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However ,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Office Headquarters

NORTH AMERICA

Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: [phone]
FAX: [phone]

EUROPE

Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: [phone]
FAX: [phone]

ASIA

Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: [phone]
FAX: [phone]

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