Intersil Corporation HS-302RH-T Datasheet
HS-302RH-T
Data Sheet July 1999 File Number
Radiation Hardened
CMOS Dual DPST Analog Switch
Intersil’sSatellite Applications FlowTM(SAF) devices are fully
tested and guaranteed to 100kRAD Total Dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The HS-302RH-T analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by
layout (thin oxide tabs extending to a channel stop) and
processing (hardened gate oxide). These switches offer lowresistance switching performance for analog voltages up to
the supply rails. “ON” resistance is low and staysreasonably
constant overthe full range of operating voltageand current.
“ON” resistance also stays reasonably constant when
exposed to radiation, being typically 30Ω pre-rad and 35Ω
post 100kRAD(Si). This device provide break-before-make
switching.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-302RH-T
are contained in SMD 5962-95812. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/ne wsafc lasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/spacedefense/ne wsafc lasst.asp
4603.1
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 105 RAD(Si)
• No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-302 Series Analog
Switches
• Analog Signal Range 15V
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)
•Low R
. . . . . . . . . . . . . . . . . . . . . 60Ω (Max, Post Rad)
ON
• Low Operating Power. . . . . . . . . . 100µA (Max, Post Rad)
Pinouts
HS1-302RH-T (SBDIP), CDIP2-T14
TOP VIEW
1
NC
2
S3
3
D3
4
D1
5
S1
6
IN1
7
GND
HS9-302RH-T (FLATPACK), CDFP3-F14
NC
S3
D3
D1
S1
IN1
GND
TOP VIEW
1
2
3
4
5
6
7
14
V+
13
S4
12
D4
11
D2
10
S2
9
IN2
8
V-
14
13
12
11
10
9
8
V+
S4
D4
D2
S2
IN2
V-
Ordering Information
TEMP.
ORDERING
NUMBER
5962R9581201TCC HS1-302RH-T -55 to 125
5962R9581201TXC HS9-302RH-T -55 to 125
NOTE:
Minimumorderquantity for -T is 150 units through
distribution, or 450 units direct.
PART
NUMBER
1
RANGE
(oC)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Functional Diagram
IN
LOGIC ALL SWITCHES
0 OFF
1ON
www.intersil.com or 407-727-9207
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
N P
D
TRUTH TABLE
| Copyright © Intersil Corporation 1999
Die Characteristics
HS-302RH-T
DIE DIMENSIONS:
(2130µm x 1930µm x 279µm ±25.4µm)
84 x 76 x 11mils ±1mil
METALLIZATION:
Type: Al
Thickness: 12.5k
Å ±2kÅ
SUBSTRATE POTENTIAL:
Unbiased (DI)
BACKSIDE FINISH:
Gold
Metallization Mask Layout
D3
HS-302RH-T
S3
V+
PASSIVATION:
Type: Silox (S
Thickness: 8k
)
iO2
Å ±1kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm
2
TRANSISTOR COUNT:
76
PROCESS:
Metal Gate CMOS, Dielectric Isolation
S4
D4
D1
S1
IN1
NC
GND
V-
D2
S2
IN2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However ,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
2
Loading...