Intersil Corporation HS-26CT31RH Datasheet
HS-26CT31RH
Data Sheet August 1999
Radiation HardenedQuadDifferentialLine
Driver
The Intersil HS-26CT31RH is a quad differential line driver
designed for digital data transmission over balanced lines
and meets the requirements of EIA standard RS-422.
Radiation hardened CMOS processing assures low power
consumption, high speed, and reliable operation inthemost
severe radiation environments.
The HS-26CT31RH accepts TTL signal levels and converts
them to RS-422 compatible outputs. This circuit uses special
outputs that enable the drivers to power down without
loading down the bus. Enable and disable pins allow several
devices to be connected to the same data source and
addressed independently.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-95632. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
File Number
2929.2
Features
• Electronically Screened to SMD #5962-95632
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.2 Micron Radiation Hardened CMOS
• Total Dose Up to 300kRAD(Si)
• Latchup Free
• EIA RS-422 Compatible Outputs (Except for IOS)
• TTL Compatible Inputs
• High Impedance Outputs when Disabled or Powered
Down
• Low Power Dissipation 2.75mW Standby (Max)
• Single 5V Supply
• Low Output Impedance 10Ω or Less
o
• Full -55
C to +125oC Military Temperature Range
Pinouts
HS1-26CT31RH (SBDIP) CD1P2-T16
TOP VIEW
Logic Diagram
ENABLE ENABLE
DIN
DO DO CO BO AO
CIN
CO
BIN
BO
AIN
AO
Ordering Information
TEMP.
INTERNAL
ORDERING NUMBER
5962F9563201QEC HS1-26CT31RH-8 -55 to 125
5962F9563201QXC HS9-26CT31RH-8 -55 to 125
5962F9563201V9A HS0-26CT31RH-Q 25
5962F9563201VEC HS1-26CT31RH-Q -55 to 125
5962F9563201VXC HS9-26CT31RH-Q -55 to 125
HS1-26CT31RH/PROTO HS1-26CT31RH/PROTO -55 to 125
HS9-26CT31RH/PROTO HS9-26CT31RH/PROTO -55 to 125
MKT. NUMBER
RANGE
(oC)
AIN
AO
AO
ENABLE
BO
BO
BIN
GND
VDD
1
AIN
2
AO
3
AO
BO
BO
BIN
GND
4
5
6
7
8
TOP VIEW
116
2
3
4
5
6
7
8
ENABLE
HS9-26CT31RH (FLATPACK) CDFP4-F16
16
DIN
15
DO
14
13
DO
12
ENABLE
11
CO
CO
10
CIN
9
15
14
13
12
11
10
9
VDD
DIN
DO
DO
ENABLE
CO
CO
CIN
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Die Characteristics
HS-26CT31RH
DIE DIMENSIONS:
96.5 mils x 195 mils x 21 mils
(2450 x 4950)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorus Silicon Glass)
Thickness: 10k
Å ±1kÅ
Metallization:
M1: Mo/TiW
Thickness: 5800
Å
M2: Al/Si/Cu (Top)
Thickness: 10k
Å ±1kÅ
Metallization Mask Layout
AO (2)
(1) AIN
HS26CT31RH
(16) VDD
(16) VDD
Substrate:
AVLSI1RA
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
V
DD
ADDITIONAL INFORMATION:
Worst Case Current Density:
5
2
<2.0 x 10
A/cm
Bond Pad Size:
110µm x 100µm
(15) DIN
(14) DO
AO (3)
ENABLE (4)
BO (5)
BO (6)
BIN (7)
GND (8)
GND (8)
(13)
(12)
(11)
(10) CO
CIN (9)
DO
ENABLE
CO
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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