intersil HS-26C32RH DATA SHEET

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TM

HS-26C32RH

Data Sheet August 2000

Radiation HardenedQuadDifferentialLine
Receiver

The Intersil HS-26C32RH is a differential line receiver
designed for digital data transmission over balanced lines
and meets the requirements of EIA Standard RS-422.
Radiation hardened CMOS processing assures low power
consumption, high speed, and reliable operation in the most
severe radiation environments.

The HS-26C32RHhas an input sensitivity typically of 200mV
over the common mode input voltage range of ±7V. The
receivers are also equipped with input fail safe circuitry,
which causes the outputs to go to a logic “1” when the inputs
are open. Enable and Disable functions are common to all
four receivers.

Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.

Detailed Electrical Specifications for these devices are
contained in SMD 5962-95689. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp

Ordering Information

TEMP. RANGE

ORDERING NO. INTERNAL MKT. NO.

(oC)

5962F9568901QEC HS1-26C32RH-8 -55 to 125
5962F9568901QXC HS9-26C32RH-8 -55 to 125
5962F9568901V9A HS0-26C32RH-Q 25
5962F9568901VEC HS1-26C32RH-Q -55 to 125
5962F9568901VXC HS9-26C32RH-Q -55 to 125
HS1-26C32RH/PROTO HS1-26C32RH/PROTO -55 to 125
HS9-26C32RH/PROTO HS9-26C32RH/PROTO -55 to 125

Logic Diagram

ENABLE ENABLE

DIN CIN CIN BIN BIN AIN AIN

DIN

+-+-+-+-

File Number 3402.3

Features

• Electrically Screened to SMD # 5962-95689

• QML Qualified per MIL-PRF-38535 Requirements

• 1.2 Micron Radiation Hardened CMOS

- Total Dose. . . . . . . . . . . . . . . . . . . . .300 krad(Si) (Max)

• Latchup Free

• EIA RS-422 Compatible Inputs

• CMOS Compatible Outputs

• Input Fail Safe Circuitry

• High Impedance Inputs when Disabled or Powered Down

• Low Power Dissipation 138mW Standby (Max)

• Single 5V Supply

o

• Full -55

C to 125oC Military Temperature Range

Pinouts

HS1-26C32RH 16 LEAD CERAMIC SIDEBRAZE DIP

MIL-STD-1835: CDIP2-T16

TOP VIEW

VDD

16
15

BIN
BIN

14

BOUT

13
12

ENABLE
DOUT

11
10

DIN

9

DIN

VDD
15
14
13
12
11
10

9

BIN

BIN

BOUT

ENABLE

DOUT

DIN

DIN

AIN
AIN

AOUT

ENABLE

COUT

CIN
CIN

GND

1

AIN

2

AIN

3

AOUT

COUT

CIN
CIN

GND

4
5
6
7
8

ENABLE

HS9-26C32RH 16 LEAD FLATPACK

MIL-STD-1835: CDFP4-F16

TOP VIEW

116
2
3
4
5
6
7
8

DOUT

AOUTBOUTCOUT

1

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

HS-26C32RH

Propagation Delay Timing Diagram

-V

IN

+VIN = 0V

V

OH

V

OL

INPUT

t

PLH

VS = 50%

0V

t

PHL

OUTPUT

Three-State Low Timing Diagram

V

IH

V

S

V

SS

V

OZ

V

OL

INPUT

T

PZL

V

T

T

OUTPUT

PLZ

Propagation Delay Load Circuit

TEST
POINT

R

L

+2.5V

-2.5V

DUT

= 50pF

C

L

= 1000Ω

R

L

C

L

Three-State High Timing Diagrams

V

IH

t

PZH

INPUT

V

T

t

OUTPUT

PHZ

V

W

V

S

V

SS

V

OH

V

W

V

OZ

THREE-STATE LOW VOLTAGE LEVELS

PARAMETER HS-26C32RH UNITS

V

DD

V

IH

V

S

V

T

V

W

4.50 V

4.50 V

2.25 V
50 %

VOL + 0.5 V

GND 0 V

Three-State Low Load Circuit

V

DD

R

L

TEST
POINT

C

L

C

= 50pF

L

= 1000Ω

R

L

DUT

THREE-STATE HIGH VOLTAGE LEVELS

PARAMETER HS-26C32RH UNITS

V

DD

V

IH

V

S

V

T

V

W

4.50 V

4.50 V

2.25 V
50 %

VOH - 0.5 V

GND 0 V

Three-State High Load Circuit

DUT

C

L

= 50pF

C

L

RL = 1000Ω

TEST
POINT

R

L

2

Die Characteristics

HS-26C32RH

DIE DIMENSIONS:

84 mils x 130 mils
(2140µm x 3290µm)

INTERFACE MATERIALS:
Glassivation:

Type: SiO

2

Thickness: 10kű 1kÅ

Metallization Mask Layout

AIN (2)

Top Metallization:

M1: Mo/Tiw
Thickness: 5800Å
M2: Al/Si/Cu
Thickness: 5800

Worst Case Current Density:

<2.0 x 10

Bond Pad Size:

110µm x 100µm

HS-26C32RH

AIN V

(1) (16) (15)

DD

BIN

5

A/cm

Å

2

(14) B

IN

A

(3)

OUT

ENAB (4)

C

(5)

OUT

(6)

C

IN

(7)

CIN

(8) (9)

GND

DIN

(13) B

OUT

(12) ENAB

(11) D

OUT

(10) D

IN

3

HS-26C32RH

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly , the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products,see web site www.intersil.com

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