Intersil Corporation HS-2100RH Datasheet

HS-2100RH

Data Sheet June 1999

Radiation Hardened High Frequency
Half Bridge Driver

The Radiation Hardened HS-2100RH is a high frequency,
100V Half Bridge N-Channel MOSFET Driver IC, which is a
functional, pin-to-pin replacement for the Intersil HIP2500
and the industry standard 2110 types. The low-side and
high-side gate drivers are independently controlled. This
givesthe user maximum flexibility in dead-timeselectionand
driver protocol.

In addition, the device has on-chip error detection and
correction circuitry, which monitors the state of the high-side
latch and compares it to the HIN signal. If they disagree, a
set or reset pulse is generated to correct the high-side latch.
This feature protects the high-side latch from SEUs.

Undervoltage on the high-side supply forces HO low. When
that supply returns to a valid voltage, HO will go to the state
of HIN. Undervoltage on the low-side supply forces both LO
and HO low. When that supply becomes valid, LO returns to
the LIN state and HO returns to the HIN state.

Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.

Detailed Electrical Specifications for the HS-2100RH are
contained in SMD 5962-99536. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp

This link will not be available until the SMD is finalized.

Ordering Information

INTERSIL MKT.

ORDERING NUMBER

5962F9953601VXC HS9-2100RH-Q -55 to 125
5962F9953601QXC HS9-2100RH-8 -55 to 125
HS9-2100RH/Proto HS9-2100RH/Proto -55 to 125

NUMBER

TEMP.

RANGE (oC)

File Number 4562.3

Features

• Electrically Screened to DESC SMD # 5962-99536

• QML Qualified per MIL-PRF-38535 Requirements

• Radiation Environment

- Maximum Total Dose . . . . . . . . . . . . . .3 x 10

5

RAD(SI)

- DI RSG Process Provides Latch-up Immunity

- Vertical Architecture Provides Low Dose Rate Immunity

• Bootstrap Supply Max Voltage to 120V

• Drives 1000pF Load at 1MHz with Rise and Fall Times of
45ns (Typ)

• 1A (Typ) Peak Output Current

• Independent Inputs for Non-Half Bridge Topologies

• Low DC Power Consumption . . . . . . . . . . . . . 60mW (Typ)

• Operates with V

= VCC Over 12V to 20V Range

DD

• Supply Undervoltage Protection

Applications

• High Frequency Switch-Mode Power Supplies

• Drivers for Inductive Loads

• DC Motor Drivers

Pinout

HS-2100RH

FLATPACK (CDFP4-F16)

TOP VIEW

LO

COM

V

CC

NC
NC
VS
VB

HO

116
2
3
4
5
6
7
8

15
14
13
12
11
10

9

NC
V
LIN
SD
HIN
V
NC
NC

SS

DD

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 1999

Die Characteristics

HS-2100RH

DIE DIMENSIONS:

4710µm x 3570µm (186 mils x 141 mils)
Thickness: 483µm ±25.4µm (19 mils ±1 mil)

INTERFACE MATERIALS:
Glassivation:

Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0k

ű1.0kÅ

Top Metallization:

Type: ALSiCu
Thickness: 16.0k

Å ±2kÅ

Substrate:

Radiation Hardened Silicon Gate,
Dielectric Isolation

Metallization Mask Layout

SD (13)

HS-2100RH

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:
Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:
Worst Case Current Density:

5

2

<2.0 x 10

A/cm

Transistor Count:

125

HIN (12)

LIN (14)

(15)

V

SS

LO (1)

COM (2)

(3)

V

CC

V

DD

HO (8)

VB (7)

VS (6)

(11)

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

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