HS-1410RH
Data Sheet August 1999
Radiation Hardened, High Speed, Low
Power, Current Feedback Op Amp with
Output Disable
The Radiation Hardened HS-1410RH is a high speed, low
power current feedback amplifier built with Intersil’s
proprietary complementary bipolar UHF-1 (DI, bonded
wafer) process. This technology provides an immunity to
Single Event Latch-up and the capability of highly reliable
performance in any radiation environment. These devices
are QML approved and are manufactured and screened in
full compliance with MIL-PRF-38535.
This amplifier features a TTL/CMOS compatible
control, pin 10, which when pulled low, reduces the supply
current and forces the output into a high impedance state.
This allows easy implementation of simple, low power
multiplexing circuits in redundant spacecraft designs. The
wide bandwidth and fast slew rate make these devices
ideal for pulse and video amplifier and routing applications.
The high output current and disable feature provide the
perfect combination needed for A/D driver/multiplexer
circuits.
Specifications for Rad Hard QML devices are controlled
by the Defense SupplyCenterinColumbus (DSCC). The
SMD numbers listed here must be used when ordering.
DISABLE
File Number 4470.1
Features
• Electrically Screened to SMD # 5962-98518
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
5
- Total Dose. . . . . . . . . . . . . . . . . . . . . . . 3 x 10
RAD(Si)
- SEL. . . . . . . . . . . . . . None (Bonded Wafer DI Process)
• Wide 3dB Bandwidth (Typ). . . . . . . . . . . . . . . . . . 360MHz
• High Slew Rate (Typ) . . . . . . . . . . . . . . . . . . . . 1000V/µS
• High Output Current (Typ) . . . . . . . . . . . . . . . . . . . . 60mA
• Low Supply Current (Typ). . . . . . . . . . . . . . . . . . . . 5.9mA
• Output Enable/Disable Time (Typ) . . . . . . . . . 180ns/35ns
• Upgrade for CLC410/411
Applications
• Multiplexing Flash A/D Drivers
• High Speed Signal Switching and Routing
• Pulse and Video Amplifiers
• Wideband Amplifiers
• Imaging Systems
Detailed Electrical Specifications for these devices are
contained in SMD 5962-98518. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
Ordering Information
INTERNAL
ORDERING NUMBER
5962F9851801VXC HS9-1410RH-Q -55 to 125
MKT. NUMBER
TEMP. RANGE
(oC)
Pinout
NC
-IN
+IN
V-
NC
HS9-1410RH (FLATPACK) CDFP3-F10
TOP VIEW
1
2
3
4
5
10
9
8
7
6
DISABLE
V+
OUT
NC
NC
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Die Characteristics
HS-1410RH
DIE DIMENSIONS:
59 mils x 59 mils x 19 mils ±1 mil
(1500µm x 1500µm x 483µm ± 25.4µm)
INTERFACE MATERIALS:
Glassivation:
Type: Nitride
Thickness: 4k
Å ±0.5kÅ
Top Metallization:
Type: Metal 1: AICu(2%)/TiW
Thickness: Metal 1: 8k
Å ±0.4kÅ
Type: Metal 2: AICu(2%)
Thickness: Metal 2: 16k
Å ±0.8kÅ
Metallization Mask Layout
-IN
Substrate:
UHF-1, Bonded Wafer, DI
ASSEMBLY RELATED INFORMATION:
Substrate Potential (Powered Up):
Floating (Recommend Connection to V-)
ADDITIONAL INFORMATION:
Transistor Count:
75
HS-1410RH
DISABLE
V+
OUT
+IN
V-
OPTIONAL GND (NOTE)
NOTE: This pad is not bonded out on packaged units. Die users may set a GND reference, via this pad, to ensure the TTL compatibility of the DIS
input when using asymmetrical supplies (e.g. V+ = 10V, V- = 0V).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly,the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
2