Intersil Corporation HS-117RH Datasheet
HS-117RH
Data Sheet February 2000
Radiation Hardened
Adjustable Positive Voltage Regulator
The Radiation Hardened HS-117RH is an adjustablepositive
voltage linear regulator capable of operating up to 40VDC.
The voltage is adjustable from 1.2V to 37V with two external
resistors. The device is capable of sourcing from 50mA to
1.25A
(Min). Protection is provided by the on-chip
PEAK
thermal shutdown and output current limiting circuitry.
The Intersil HS-117RH has advantages over other industry
standard types, in that circuitry is incorporated to minimize
the effects of radiation and temperature on device stability.
Negligible low dose rate sensitivity is achieved through the
use of vertical transistor geometries.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) process, the HS-117RH is immune to
Single Event Latch-up and hasbeen specifically designed to
provide highly reliable performance in harsh radiation
environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for the HS-117RH are
contained in SMD 5962-99547. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/space.asp
Pinout
HS9S-117RH (TO-257AA FLANGE MOUNT)
TOP VIEW
File Number 4560.4
Features
• Electrically Screened to DSSC SMD # 5962-99547
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- 300kRAD(Si) (Max)
- Latch-up Immune
- Negligible Low Dose Rate Effects Sensitivity
• Superior Temperature Stability
• Over-Temp and Over-Current/Voltage Protection
Applications
• Switch Mode DC - DC Power Conversion
• Housekeeping Supplies for Motors
• Power Supplies for Robotic Control
Ordering Information
ORDERING
NUMBER
5962F9954701VXC HS9S-117RH-Q -55 to 125
5962F9954701QXC HS9S-117RH-8 -55 to 125
5962F9954701/VYA HSYE-117RH-Q -55 to 125
5962F9954701/QYA HSYE-117RH-8 -55 to 125
HS9S-117RH/Proto HS9S-117RH/Proto -55 to 125
HSYE-117RH/Proto HSYE-117RH/Proto -55 to 125
INTERNAL
MKT. NUMBER
TEMP.RANGE
(oC)
HSYE-117RH (SMD.5 CLCC)
3
2
1
1
IN
OUT
ADJUST
NOTE: No current JEDEC outline for the SMD.5 package. Refer to
SMD for packagedimensions.TheTO-257 is a totally isolated metal
package.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
BOTTOM VIEW
3
2
1 - ADJUST
2 - IN
3 - OUT
1
| Copyright © Intersil Corporation 2000
Die Characteristics
HS-117RH
DIE DIMENSIONS
2616µm x 2794µm (103 mils x 110 mils)
483µm ±25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation:
Type: Silox (SiO
Thickness: 8.0k
)
2
ű1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kű2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Metallization Mask Layout
Backside Finish:
Gold
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density:
5
2
<2.0 x 10
A/cm
Transistor Count:
95
HS-117RH
V
IN
V
IN
V
OUT
ADJ V
OUTK
V
OUT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. Howev er, no responsibility is assumed byIntersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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