Intersil Corporation HS-1100RH Datasheet

HS-1100RH

Data Sheet August 1999

Radiation Hardened, Ultra High Speed
Current Feedback Amplifier

The HS-1100RH is a radiation hardened high speed,
wideband, fast settling current feedback amplifier. Built with
Intersil’s proprietary, complementary bipolar UHF-1 (DI
bonded wafer) process, it is the fastest monolithic amplifier
available from any semiconductor manufacturer. These
devicesare QML approved and are processed and screened
in full compliance with MIL-PRF-38535.

The HS-1100RH’s wide bandwidth, fastsettling characteristic,
and low output impedance make this amplifier ideal for driving
fast A/D conv erters.

Component and composite video systems will also benefit
from this amplifier’s performance, as indicated by the
excellent gain flatness, and 0.03%/0.05 Deg. Differential
Gain/Phase specifications (R

Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.

Detailed Electrical Specifications for these devices are
contained in SMD 5962-94676. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm

= 75Ω).

L

File Number 4100.2

Features

• Electrically Screened to SMD # 5962-94676

• QML Qualified per MIL-PRF-38535 Requirements

• Low Distortion (HD3, 30MHz). . . . . . . . . . . . -84dBc (Typ)

• Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . 850MHz (Typ)

• Very High Slew Rate . . . . . . . . . . . . . . . . 2300V/µs (Typ)

• Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . . 11ns (Typ)

• Excellent Gain Flatness (to 50MHz). . . . . . . 0.05dB (Typ)

• High Output Current . . . . . . . . . . . . . . . . . . . 65mA (Typ)

• Fast Overdrive Recovery . . . . . . . . . . . . . . . . <10ns (Typ)

• Total Gamma Dose. . . . . . . . . . . . . . . . . . . . 300kRAD(Si)

• Latch Up. . . . . . . . . . . . . . . . . . . . . None (DI Technology)

Applications

• Video Switching and Routing

• Pulse and Video Amplifiers

• Wideband Amplifiers

• RF/IF Signal Processing

• Flash A/D Driver

Ordering Information

INTERNAL

ORDERING NUMBER

5962F9467602VPA HS7-1100RH-Q -55 to 125
5962F9467602VPC HS7B-1100RH-Q -55 to 125
HFA1100IJ (Sample) HFA1100IJ -40 to 85
HFA11XXEVAL Evaluation Board

MKT. NUMBER

TEMP. RANGE

(oC)

• Imaging Systems

Pinout

NC

-IN

+IN

HS-1100RH

GDIP1-T8 (CERDIP)

OR CDIP2-T8 (SBDIP)

TOP VIEW

1
2

-

+

3
4

V-

8

NC

7

V+

6

OUT

5

NC

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

HS-1100RH

Typical Applications

Optimum Feedback Resistor

The enclosed plots of inverting and non-inverting frequency
response illustrate the performance of the HS-1100RH in
various gains. Although the bandwidth dependency on
closed loop gain isn’t as severe as that of a voltage
feedback amplifier, there can be an appreciable decrease
in bandwidth at higher gains. This decrease may be
minimized by taking advantage of the current feedback
amplifier’s unique relationship between bandwidth and R
All current feedback amplifiers require a feedback resistor,
evenfor unity gain applications, and R

, in conjunction with

F

the internal compensation capacitor, sets the dominant
pole of the frequency response. Thus, the amplifier’s
bandwidth is inversely proportional to R
design is optimized for a 510Ω R
Decreasing R

in a unity gain application decreases

F

F

. The HS-1100RH

F

at a gain of +1.

stability, resulting in excessive peaking and overshoot. At
higher gains the amplifier is more stable, so R

can be

F

decreased in a trade-off of stability for bandwidth.
The table below lists recommended R

values for various

F

gains, and the expected bandwidth.

GAIN

(ACL) RF (Ω)

-1 430 580
+1 510 850
+2 360 670
+5 150 520

[phone]
[phone]

BANDWIDTH

(MHz)

F

PC Board Layout

The frequency response of this amplifier depends greatly on
the amount of care taken in designing the PC board. The

use of low inductance components such as chip
resistors and chip capacitors is strongly recommended,
while a solid ground plane is a must!

Attention should be given to decoupling the power supplies.
A large value (10µF) tantalum in parallel with a small value
(0.1µF) chip capacitor works well in most cases.

Terminated microstrip signal lines are recommended at the
input and output of the device. Capacitance directly on the
output must be minimized, or isolated as discussed in the
next section.

Care must also be taken to minimize the capacitance to
ground seen by the amplifier’s inverting input (-IN). The
larger this capacitance, the worse the gain peaking, resulting
in pulse overshoot and possible instability. To this end, it is
recommended that the ground plane be removed under

traces connected to -IN, and connections to -IN should be
kept as short as possible.

An example of a good high frequency layout is the
Evaluation Board shown in Figure 2.

Driving Capacitive Loads

Capacitive loads, such as an A/D input, or an improperly
terminated transmission line will degrade the amplifier’s
phase margin resulting in frequency response peaking and

.

possible oscillations. In most cases, the oscillation can be
avoided by placing a resistor (R

) in series with the output

S

prior to the capacitance.
Figure 1 details starting points for the selection of this

resistor. The points on the curve indicate the R

and C

S

L

combinations for the optimum bandwidth, stability, and
settling time, but experimental fine tuning is recommended.
Picking a point above or to the right of the curve yields an
overdampedresponse, while points below or left of the curve
indicate areas of underdamped performance.

50
45

40
35
30

(Ω)

S

25

R

20
15
10

5
0

0 40 80 120 160 200 240 280 320 360 400

FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs

R

and CL form a low pass network at the output, thus

S

AV = +1

AV = +2

LOAD CAPACITANCE (pF)

LOAD CAPACITANCE

limiting system bandwidth well below the amplifier bandwidth
of 850MHz. By decreasing R

as CL increases (as

S

illustrated in the curves), the maximum bandwidth is
obtained without sacrificing stability. Even so, bandwidth
does decrease as you move to the right along the curve. For
example, at A

= +1, RS = 50Ω, CL = 30pF, the overall

V

bandwidth is limited to 300MHz, and bandwidth drops to
100MHz at A

= +1, RS=5Ω, CL = 340pF.

V

Evaluation Board

The performance of the HS-1100RH maybe evaluatedusing
the HFA11XXEVAL Evaluation Board.

The layout and schematic of the board are shown in
Figure 2. To order evaluation boards, please contact your
local sales office.

2

HS-1100RH

VH

1

+IN

OUT

VL

FIGURE 2A. TOP LAYOUT FIGURE 2B. BOTTOM LAYOUT

V+

V-

GND

10µF

500

R

1

50Ω

IN

0.1µF

-5V

500

1
2
3
4

GND

V

H

8

0.1µF

7

50Ω

6
5

GND

OUT
V

L

10µF

+5V

FIGURE 2C. SCHEMATIC

FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT

Typical Performance Characteristics

Device Characterized at: V

PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS

Input Offset Voltage (Note 1) VCM= 0V 25oC2mV
Average Offset Voltage Drift Versus Temperature Full 10 µV/oC
VIO CMRR ∆VCM = ±2V 25oC46dB
VIO PSRR ∆VS = ±1.25V 25oC50dB
+Input Current (Note 1) VCM = 0V 25oC25µA
Average +Input Current Drift Versus Temperature Full 40 nA/oC

- Input Current (Note 1) VCM = 0V 25oC12µA
Average -Input Current Drift Versus Temperature Full 40 nA/oC
+Input Resistance ∆VCM= ±2V 25oC50kΩ

- Input Resistance 25oC16Ω
Input Capacitance 25oC 2.2 pF
Input Noise Voltage (Note 1) f = 100kHz 25oC 4 nV/√Hz
+Input Noise Current (Note 1) f = 100kHz 25oC 18 pA/√Hz

-Input Noise Current (Note 1) f = 100kHz 25oC 21 pA/√Hz
Input Common Mode Range Full ±3.0 V
Open Loop Transimpedance AV = -1 25oC 500 kΩ

= ±5V, RF = 360Ω, AV = +2V/V, RL = 100Ω, Unless Otherwise Specified

SUPPLY

3

HS-1100RH

Typical Performance Characteristics (Continued)

Device Characterized at: V

PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS

Output Voltage AV = -1, RL = 100Ω 25oC ±3.3 V

Output Current (Note 1) AV = -1, RL = 50Ω 25oC to 125oC ±65 mA

DC Closed Loop Output Resistance 25oC 0.1 W
Quiescent Supply Current (Note 1) RL = Open Full 24 mA

-3dB Bandwidth (Note 1) AV = -1, RF = 430Ω, V

Slew Rate AV = +1, RF = 510Ω, V

Full Power Bandwidth V
Gain Flatness (Note 1) To 30MHz, RF = 510Ω 25oC ±0.014 dB

Linear Phase Deviation (Note 1) To 100MHz, RF = 510Ω 25oC ±0.6 Degrees
2nd Harmonic Distortion (Note 1) 30MHz, V

3rd Harmonic Distortion (Note 1) 30MHz, V

3rd Order Intercept (Note 1) 100MHz, RF = 510Ω 25oC 30 dBm
1dB Compression 100MHz, RF = 510Ω 25oC 20 dBm
Reverse Isolation (S12) 40MHz, RF = 510Ω 25oC -70 dB

Rise and Fall Time V

Overshoot (Note 1) V
Settling Time (Note 1) To 0.1%, V

Differential Gain AV = +2, RL = 75Ω, NTSC 25oC 0.03 %
Differential Phase AV = +2, RL = 75Ω, NTSC 25oC 0.05 Degrees
Overdrive Recovery Time RF = 510Ω, VIN = 5V

NOTE:

1. See Typical Performance Curves for more information.

= ±5V, RF = 360Ω, AV = +2V/V, RL = 100Ω, Unless Otherwise Specified

SUPPLY

AV = -1, RL = 100Ω Full ±3.0 V

AV = -1, RL = 50Ω -55oC to 0oC ±50 mA

= 200mV
AV = +1, RF = 510Ω, V
AV = +2, RF = 360Ω, V

AV = +2, V

= 5V

OUT

OUT

P-P

= 5V

P-P

OUT

OUT
OUT
OUT

= 200mV
= 200mV
= 5V

P-P

P-P

P-P
P-P

To 50MHz, RF = 510Ω 25oC ±0.05 dB
To 100MHz, RF = 510Ω 25oC ±0.14 dB

= 2V
50MHz, V
100MHz, V

50MHz, V
100MHz, V

OUT
OUT

OUT
OUT

OUT

OUT

= 2V

= 2V
= 2V
= 2V

= 2V

P-P
P-P

P-P
P-P
P-P

P-P

100MHz, RF = 510Ω 25oC -60 dB
600MHz, RF = 510Ω 25oC -32 dB

= 0.5V

OUT

V

OUT
OUT

To 0.05%, V
To 0.02%, V

= 2V
= 0.5V

P-P

P-P

, Input tR/tF = 550ps 25oC11%

P-P

= 2V to 0V, RF = 510Ω 25oC11ns

OUT

= 2V to 0V, RF = 510Ω 25oC19ns

OUT

= 2V to 0V, RF = 510Ω 25oC34ns

OUT

P-P

25oC 580 MHz
25oC 850 MHz
25oC 670 MHz
25oC 1500 V/µs
25oC 2300 V/µs
25oC 220 MHz

25oC -55 dBc
25oC -49 dBc
25oC -44 dBc
25oC -84 dBc
25oC -70 dBc
25oC -57 dBc

25oC 500 ps
25oC 800 ps

25oC 7.5 ns

4