Intersil Corporation HRFZ44N Datasheet

HRFZ44N

Data Sheet June 1999 File Number

49A, 55V, 0.022 Ohm, N-Channel UltraFET
Power MOSFET

This N-Channel power MOSFET is
manufactured using the innovative
UltraFET™process.Thisadvanced

process technology achieves the
lowest possible on-resistance per silicon area, resulting in
outstanding performance. This device is capable of
withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low­voltage bus switches, and power management in portable
and battery-operated products.

Formerly developmental type TA75329.

Ordering Information

PART NUMBER PACKAGE BRAND

HRFZ44N TO-220AB HRFZ44N

NOTE: When ordering, use the entire part number.

Features

• 49A, 55V

• Simulation Models

- Temperature Compensated PSPICE
Electrical Models

- Spice and Saber Thermal Impedance Models

- www.semi.Intersil.com/families/models.htm

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

®

and SABER

Symbol

D

G

S

4752

©

Packaging

DRAIN

(FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

1

SABER is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

| Copyright © Intersil Corporation 1999

HRFZ44N

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

55 V
55 V

±20 V

Drain Current

Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

D

DM

49

160

A

A

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS 0.227 A2s

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

120

0.8

-55 to 175

300
260

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

2. Repetitive rating: pulse width limited by maximum junction temperature.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I

DSSID

DSS

= 250µA, VGS = 0V (Figure 11) 55 - - V
VDS = 50V, VGS = 0V - - 1 µA
VDS = 45V, VGS = 0V, TC = 150oC - - 250 µA

Gate to Source Leakage Current I

GSS

VGS = ±20V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= VDS, ID = 250µA (Figure 10) 2 - 4 V

= 25A, VGS = 10V (Figure 9) - 0.019 0.022 Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

θJC
θJA

(Figure 3) - - 1.25
TO-220 - - 62

o

C/W

o

C/W
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t

ON

OFF

VDD = 30V, ID≅ 25A,
RL = 1.2Ω, VGS= 10V,
RGS = 9.1Ω
(Figures 18, 19)

r

f

- - 105 ns

-12- ns

-58- ns

-33- ns

-33- ns

- - 100 ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 10V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Reverse Transfer Capacitance Q

g(TOT)VGS

g(10)
g(TH)

gs
gd

= 0V to 20V VDD = 30V,
VGS = 0V to 10V - 35 43 nC
VGS = 0V to 2V - 2.0 2.5 nC

ID≅ 25A,
RL = 1.2Ω
I

= 1.0mA

g(REF)

(Figures 13, 16, 17)

-6075nC

-4-nC

-14-nC

2

HRFZ44N

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

Typical Performance Curves

1.2

1.0

0.8

ISS
OSS
RSS

SD

rr

RR

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

- 1060 - pF

- 405 - pF

-95-pF

ISD = 25A - - 1.25 V
ISD = 25A, dISD/dt = 100A/µs--72ns
ISD = 25A, dISD/dt = 100A/µs - - 120 nC

60

50

40

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

125 175

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

30

20

, DRAIN CURRENT (A)

D

I

10

0

25

50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

P

DM

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

10

2

x R

θJC

0

t

1

θJC

t

2

+ T

C

1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

3